V8PAM10SHM3/I [VISHAY]
Rectifier Diode,;
| 型号： | V8PAM10SHM3/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V8PAM10S
Vishay General Semiconductor
www.vishay.com
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020,
Top View
Bottom View
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: P/NHM3
SMPA (DO-221BC)
Anode
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3
D
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial and
automotive applications.
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
8.0 A
100 V
90 A
Case: SMPA (DO-221BC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
VRRM
IFSM
VF at IF = 8.0 A (TJ = 125 °C)
TJ max.
Base P/NHM3
- halogen-free, RoHS-compliant, and
0.63 V
175 °C
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Package
SMPA (DO-221BC)
Single
Circuit configuration
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8PAM10S
8MBS
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF(AV)
8.0
Maximum DC forward current
(2)
IF(AV)
2.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
90
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Notes
(1)
(2)
(3)
Units mounted on 3 cm x 3 cm aluminum PCB
Free air, mounted on recommended copper pad area, 2 oz., FR4 PCB
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 07-Apr-2020
Document Number: 87013
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PAM10S
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.61
0.75
0.53
0.63
0.003
1.5
MAX.
UNIT
IF = 4.0 A
-
TJ = 25 °C
IF = 8.0 A
IF = 4.0 A
IF = 8.0 A
0.84
(1)
Instantaneous forward voltage
VF
V
-
TJ = 125 °C
0.71
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
VR = 70 V
-
0.18
9
(2)
Reverse current
IR
mA
pF
-
VR = 100 V
3
Typical junction capacitance
4.0 V, 1 MHz
CJ
600
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V8PAM10S
UNIT
(1)(2)
RθJA
100
5
Typical thermal resistance
°C/W
(3)
RθJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RθJA - junction to ambient
Units mounted on 3 cm x 3 cm aluminum PCB; thermal resistance RθJM - junction to mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
V8PAM10S-M3/H
V8PAM10S-M3/I
V8PAM10SHM3/H (1)
V8PAM10SHM3/I (1)
UNIT WEIGHT (g)
0.032
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
H
I
3500
14 000
3500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.032
0.032
H
I
0.032
14 000
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
Axis Title
Axis Title
8.0
10000
1000
100
10
8
10000
1000
100
D = 0.8
RthJM = 5 °C/W
TM measured at cathode
D = 0.5
6.0
4.0
2.0
0
D = 0.3
D = 0.2
terminal mount typical values
D = 1.0
6
D = 0.1
4
RthJA = 100 °C/W
T
2
D = tp/T
tp
10
0
10
0
2
4
6
8
10
0
25
50
75
100 125 150 175
Average Forward Current (A)
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 07-Apr-2020
Document Number: 87013
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PAM10S
Vishay General Semiconductor
www.vishay.com
Axis Title
Axis Title
100
10
1
10000
1000
100
1000
100
10
10000
Junction to ambient
TJ = 175 °C
TJ = 150 °C
1000
100
10
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
TJ = -40 °C
0.8
0.1
10
1
0.01
0
0.2
0.4
0.6
1.0
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Axis Title
Axis Title
100
10
10000
1000
100
120
10000
Epoxy printed circuit
board FR4 copper
thickness = 70 µm
110
100
90
1
1000
100
10
TJ = 175 °C
80
TJ = 150 °C
TJ = 125 °C
0.1
TJ = 100 °C
70
0.01
60
50
0.001
0.0001
0.00001
TJ = 25 °C
TJ = -40 °C
S (cm2)
40
30
10
20
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
10
Percent of Rated Peak Reverse Voltage (%)
Copper Pad Areas (cm2)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 7 - Thermal Resistance Junction to Ambient vs.
Copper Pad Areas
Axis Title
10 000
10000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 07-Apr-2020
Document Number: 87013
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PAM10S
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPA (DO-221BC)
0.059 (1.50)
0.030 (0.75)
0.122 (3.10)
0.098 (2.50)
Cathode Band
0.057 (1.45)
0.106 (2.70)
0.087 (2.20)
0.049 (1.25)
0.063 (1.6)
0.098 (2.50)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.059 (1.50)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
MAX. 0.037 (0.92)
0.039 (1.00)
0.012 (0.30)
0.035 (0.90)
0.006 (0.15)
0.087 (2.20)
MIN.
0.060 (1.52)
MIN.
MIN.
0.059 (1.50)
MIN. 0.122 (3.10)
0.217 (5.52)
Revision: 07-Apr-2020
Document Number: 87013
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 01-Jan-2019
Document Number: 91000
1
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