VB10150C-M3_15 [VISHAY]
High-Voltage Trench MOS Barrier Schottky Rectifier;型号: | VB10150C-M3_15 |
厂家: | VISHAY |
描述: | High-Voltage Trench MOS Barrier Schottky Rectifier |
文件: | 总4页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VB10150C-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 V at IF = 3 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
• High efficiency operation
TO-263AB
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
2
1
TYPICAL APPLICATIONS
VB10150C
PIN 1
PIN 2
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
HEATSINK
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Package
TO-263AB
2 x 5.0 A
150 V
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
IFSM
60 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
VF at IF = 10 A
TJ max.
0.69 V
150 °C
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10150C
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
10
V
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
60
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MIN.
-
UNIT
IF = 3.0 A
0.82
0.99
0.63
0.69
0.5
0.5
-
TA = 25 °C
IF = 5.0 A
IF = 3.0 A
IF = 5.0 A
1.41
-
Instantaneous forward voltage
VF
V
per diode (1)
TA = 125 °C
0.75
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 100 V
VR = 150 V
-
Reverse current per diode (2)
IR
100
10
1
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 30-Aug-13
Document Number: 87991
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10150C-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10150C
UNIT
Typical thermal resistance per diode
RJC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB10150C-M3/4W
VB10150C-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.39
1.39
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
100
10
1
Resistive or Inductive Load
TA = 150 °C
10
8
TA = 125 °C
6
TA = 100 °C
4
TA = 25 °C
2
Mounted on Specific Heatsink
0
0.1
0
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
5
D = 0.8
D = 0.5
1
D = 0.3
TA = 150 °C
4
D = 0.2
TA = 125 °C
0.1
3
TA = 100 °C
D = 1.0
0.01
D = 0.1
2
0.001
T
1
TA = 25 °C
0.0001
D = tp/T
4
tp
5
0
0.00001
0
1
2
3
6
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 30-Aug-13
Document Number: 87991
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10150C-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
10
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 30-Aug-13
Document Number: 87991
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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