VB30100CHM3 [VISHAY]
Trench MOS Schottky technology;
| 型号： | VB30100CHM3 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB30100C-M3, VB30100CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
2
• AEC-Q101 qualified available:
- Automotive ordering code P/NHM3
1
VB30100C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
Package
TO-263AB
2 x 15 A
100 V
IF(AV)
VRRM
MECHANICAL DATA
IFSM
160 A
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
VF at IF = 15 A
TJ max.
0.63 V
150 °C
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
Diode variations
Common cathode
-
halogen-free, RoHS-compliant, and
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
30
V
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
IFSM
A
A
15
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
160
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Revision: 03-Jan-17
Document Number: 87984
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100C-M3, VB30100CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.516
0.576
0.734
0.455
0.522
0.627
7.2
MAX.
UNIT
IF = 5 A
-
IF = 7.5 A
IF = 15 A
IF = 5 A
T
A = 25 °C
-
0.80
-
Instantaneous forward voltage
VF
V
per diode (1)
IF = 7.5 A
IF = 15 A
TA = 125 °C
TA = 25 °C
-
0.68
-
μA
mA
μA
VR = 70 V
T
A = 125 °C
TA = 25 °C
A = 125 °C
8.0
-
Reverse current per diode (2)
IR
65
500
35
VR = 100 V
T
20
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100C
UNIT
Typical thermal resistance per diode
RJC
2.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
TO-263AB
PREFERRED P/N
VB30100C-M3/4W
VB30100C-M3/8W
VB30100CHM3/I (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.39
1.39
1.39
4W
8W
I
800/reel
Tape and reel
Tape and reel
800/reel
Note
(1)
AEC-Q101 qualified
Revision: 03-Jan-17
Document Number: 87984
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100C-M3, VB30100CHM3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
100
10
Resistive or Inductive Load
TA = 150 °C
T
A = 125 °C
1
0.1
0.01
TA = 25 °C
0
0.001
0
25
50
75
100
125
150
10
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
14
12
10
8
10 000
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.3
D = 0.2
D = 0.1
1000
100
10
D = 1.0
6
T
4
2
D = tp/T
12
tp
0
0.1
1
10
100
0
2
4
6
8
10
14
16
18
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance
100
10
Junction to Case
TA = 150 °C
TA = 125 °C
1
0.1
10
TA = 25 °C
1
0.01
0.001
V(B,J)30100C
10 100
0.1
0.01
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 03-Jan-17
Document Number: 87984
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100C-M3, VB30100CHM3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 03-Jan-17
Document Number: 87984
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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