VB30100S-E3/8W [VISHAY]
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A; 高压Trench MOS势垒肖特基整流器超低VF = 0.39 V在IF = 5 A
| 型号： | VB30100S-E3/8W |
| 厂家： | 
VISHAY |
| 描述： | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A |
| 文件： | 总5页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.39 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
3
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
2
1
1
V30100S
VF30100S
PIN 1
PIN 3
PIN 1
PIN 2
CASE
PIN 2
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB,
and TO-262AA package)
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-263AB
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
A
3
NC
VB30100S
2
1
VI30100S
PIN 1
PIN 3
NC
A
K
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
Epoxy meets UL 94V-0 flammability rating
IF(AV)
VRRM
IFSM
30 A
100 V
250 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF at IF = 30 A
TJ max.
0.69 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V30100S
VF30100S
VB30100S
VI30100S
UNIT
V
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
VRRM
100
30
IF(AV)
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 88941
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
V30100S, VF30100S, VB3010N0eSw&ProVdIu3c0t100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
I
R = 10 mA
TA = 25 °C
TA = 25 °C
VBR
105 (minimum)
-
V
IF = 5 A
IF = 10 A
IF = 30 A
0.47
0.55
0.80
-
-
0.91
Instantaneous forward voltage (1)
VF
V
IF = 5 A
IF = 10 A
IF = 30 A
0.39
0.49
0.69
-
-
TA = 125 °C
0.78
T
A = 25 °C
27
11
-
-
µA
mA
VR = 70 V
TA = 125 °C
Reverse current (2)
IR
TA = 25 °C
70
23
1000
45
µA
mA
V
R = 100 V
TA = 125 °C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V30100S
VF30100S
VB30100S
VI30100S
UNIT
Typical thermal resistance
RθJC
2.0
4.0
2.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
V30100S-E3/45
1.875
45
45
VF30100S-E3/45
VB30100S-E3/4W
VB30100S-E3/8W
VI30100S-E3/4W
1.805
50/tube
Tube
1.380
4W
8W
4W
50/tube
Tube
1.380
800/reel
Tape and reel
Tube
1.455
50/tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
35
32
28
24
D = 0.8
D = 0.5
D = 0.3
Resistive or Inductive Load
30
25
20
15
10
5
VI(B)30100S
D = 0.2
D = 0.1
D = 1.0
VF30100S
20
16
12
8
T
Mounted on Specific heatsink
4
D = tp/T
tp
0
0
0
4
8
12
16
20
24
28
32
36
0
25
50
75
100
125
150
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88941
Revision: 31-Jul-08
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
100
10
10
Junction to Case
TA = 150 °C
1
0.1
TA = 125 °C
TA = 25 °C
1
0.01
V(B,I)30100S
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
1000
10
Junction to Case
100
TA = 150 °C
10
T
A = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
VF30100S
1
10
20
30
40
50
60
70
80
90 100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 7. Typical Transient Thermal Impedance
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number: 88941
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
V30100S, VF30100S, VB3010N0eSw&ProVdIu3c0t100S
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
7° REF.
0.113 (2.87)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.103 (2.62)
0.122 (3.08) DIA.
0.145 (3.68)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.135 (3.43)
0.580 (14.73)
PIN
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.104 (2.65)
0.096 (2.45)
0.020 (0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.350 (8.89)
0.330 (8.38)
0.381 (9.68)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.190 (4.83)
Mounting Pad Layout
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
NC
K
A
0.591 (15.00)
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.591 (15.00)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88941
Revision: 31-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
VB30100S-M3/4W
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2
VISHAY
VB30100S-M3/8W
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2
VISHAY
VB30100SG
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
VISHAY
VB30100SG-E3/4W
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
VISHAY
VB30100SG-E3/8W
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
VISHAY
VB30100SG-M3/4W
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2
VISHAY
VB30120C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
VISHAY
VB30120C-E3/4W
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
VISHAY
©2020 ICPDF网 联系我们和版权申明