VBT10200C-E3/4W [VISHAY]
DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | VBT10200C-E3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 功效 瞄准线 二极管 |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
FEATURES
TMBS®
TO-220AB
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB, ITO-220AB and TO-262AA package)
3
3
2
2
1
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VT10200C
VFT10200C
PIN 1
PIN 1
PIN 2
CASE
PIN 2
PIN 3
PIN 3
TYPICAL APPLICATIONS
TO-263AB
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
K
MECHANICAL DATA
2
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
3
1
2
1
VBT10200C
VIT10200C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PIN 1
PIN 2
K
PIN 1
PIN 2
K
HEATSINK
PIN 3
Polarity: as marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
2 x 5.0 A
200 V
VRRM
IFSM
80 A
VF at IF = 5.0 A
TJ max.
0.65 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT10200C VFT10200C VBT10200C VIT10200C
UNIT
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
IFSM
EAS
200
10.0
5.0
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
80
30
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
mJ
Peak repetitive reverse current
IRRM
dV/dt
VAC
0.5
10 000
A
V/μs
V
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
1500
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 23-Feb-18
Document Number: 89177
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
TA = 25 °C
VBR
200 (minimum)
-
V
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
0.81
1.10
0.58
0.65
1.7
-
1.60
-
(1)
Instantaneous forward voltage per diode
Reverse current per diode
VF
V
TA = 125 °C
0.73
-
T
T
T
T
A = 25 °C
A = 125 °C
A = 25 °C
A = 125 °C
μA
mA
μA
VR = 180 V
VR = 200 V
1.8
-
(2)
IR
-
150
10
2.5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10200C
VFT10200C
VBT10200C
VIT10200C
UNIT
per diode
per device
3.5
7.0
5.5
3.5
2.5
3.5
2.5
Typical thermal resistance
RJC
°C/W
2.5
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT10200C-E3/4W
VFT10200C-E3/4W
VBT10200C-E3/4W
VBT10200C-E3/8W
VIT10200C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.88
1.72
1.37
1.37
1.44
4W
4W
4W
8W
4W
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
Revision: 23-Feb-18
Document Number: 89177
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
10
1
TA = 150 °C
TA = 125 °C
Resistive or Inductive Load
V(B,I)T10200C
TA = 100 °C
0.1
VFT10200C
6
0.01
0.001
0.0001
4
Mounted on Specific Heatsink
TA = 25 °C
2
0
0
25
50
75
100
125
150
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
10
1000
D = 0.8
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.5
D = 0.3
9
8
7
6
5
4
3
2
1
0
D = 0.2
D = 1.0
100
D = 0.1
T
D = tp/T
tp
10
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Device
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TA = 150 °C
Junction to Case
VFT10200C
TA = 100 °C
10
TA = 125 °C
V(B,I)T10200C
1
TA = 25 °C
0.1
1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 23-Feb-18
Document Number: 89177
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
Revision: 23-Feb-18
Document Number: 89177
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
PIN
2
0.510 (12.95)
0.470 (11.94)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
12
K
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.15 (3.81) MIN.
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
0.027 (0.686)
0.105 (2.67)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.095 (2.41)
Revision: 23-Feb-18
Document Number: 89177
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
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