VBT10202C-M3/8W [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB,;![VBT10202C-M3/8W](http://pdffile.icpdf.com/pdf2/p00264/img/icpdf/VBT10202C-M3_1591252_icpdf.jpg)
型号: | VBT10202C-M3/8W |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB, 功效 瞄准线 二极管 |
文件: | 总6页 (文件大小:161K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
FEATURES
TMBS®
• Trench MOS Schottky technology Gen 2
ITO-220AB
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
3
2
2
1
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VFT10202C
TO-262AA
VT10202C
TO-263AB
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
CASE
PIN 2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
K
MECHANICAL DATA
2
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
3
1
2
Molding compound meets UL 94 V-0 flammability rating
1
VBT10202C
VIT10202C
Base P/N-M3
- halogen-free, RoHS-compliant, and
PIN 1
PIN 2
PIN 1
PIN 3
K
PIN 2
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
K
HEATSINK
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs max.
IF(AV)
2 x 5 A
200 V
VRRM
IFSM
100 A
0.65 V
175 °C
VF at IF = 5 A (TA = 125 °C)
TJ max.
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT10202C VFT10202C VBT10202C VIT10202C
UNIT
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
VDC
IFSM
200
10
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
A
5
Maximum DC reverse voltage
160
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
100
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 12-Jan-17
Document Number: 87796
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.74
0.80
0.58
0.65
0.2
MAX.
UNIT
IF = 2.5 A
-
0.88
-
TA = 25 °C
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Instantaneous forward voltage per diode (1)
VF
V
TA = 125 °C
0.73
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 160 V
VR = 200 V
0.4
-
Reverse current (2)
IR
-
150
5
1.0
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10202C
VFT10202C
VBT10202C
VIT10202C
UNIT
per diode
per device
per device
RJC
3.4
2.2
52
6.8
4.4
60
3.4
2.2
52
3.4
2.2
52
Typical thermal resistance
RJC
°C/W
(1)(2)
RJA
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
Free air, without heatsink
(2)
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-263AB
TO-263AB
TO-262AA
ITO-220AB
PREFERRED P/N
VT10202C-M3/4W
VBT10202C-M3/4W
VBT10202C-M3/8W
VIT10202C-M3/4W
VFT10202C-M3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.88
1.37
1.37
1.44
1.72
4W
4W
8W
4W
4W
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
Revision: 12-Jan-17
Document Number: 87796
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
11
10
9
100 000
10 000
1000
100
RthJA = RthJC
TA = 175 °C
TA = 150 °C
TA = 125 °C
8
7
TA = 100 °C
6
10
5
TA, RthJA
4
1
3
T
A
= 25 °C
2
V(B,I)T10202C
0.1
1
VFT10202C
0
0.01
0
25
50
75
100
125
150
175
10 20 30 40 50 60 70 80 90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
4.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D = 0.5
D = 0.3
D = 0.2
D = 1.0
100
D = 0.1
T
D = tp/T
tp
10
0.1
1
10
100
0
1
2
3
4
5
6
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10
100
Junction to Case
TA = 175 °C
10
1
TA = 150 °C
1
TA = 125 °C
TA = 100 °C
V(B,I)T10202C
VFT10202C
TA = 25 °C
0.1
0.1
0.01
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 12-Jan-17
Document Number: 87796
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
45° REF.
0.140 (3.56) DIA.
0.135 (3.43) DIA.
0.125 (3.17) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
Revision: 12-Jan-17
Document Number: 87796
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
PIN
2
0.510 (12.95)
0.470 (11.94)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
1
K
2
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 12-Jan-17
Document Number: 87796
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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