VBT3060C-E3/8W [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
| 型号： | VBT3060C-E3/8W |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VT3060C, VFT3060C, VBT3060C & VIT3060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.38 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
3
3
2
2
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
1
1
VT3060C
VFT3060C
PIN 1
PIN 1
PIN 2
CASE
PIN 2
PIN 3
PIN 3
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
TO-262AA
K
TYPICAL APPLICATIONS
K
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
3
1
2
1
MECHANICAL DATA
VBT3060C
VIT3060C
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
PIN 1
PIN 2
K
PIN 1
PIN 2
K
HEATSINK
PIN 3
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
170 A
0.57 V
150 °C
IFSM
VF at IF = 15 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL VT3060C
VFT3060C VBT3060C VIT3060C
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
V
Maximum average forward rectified current
(fig. 1)
per device
per diode
30
15
IF(AV)
IFSM
EAS
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
170
180
1.0
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
mJ
A
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C 2 °C per diode
IRRM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 89134
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
VT3060C, VFT3060C, VBT3060C & VIT3060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
TA = 25 °C
VBR
60 (minimum)
-
V
IF = 5 A
IF = 7.5 A
IF = 15 A
0.47
0.51
0.60
-
-
0.70
Instantaneous forward voltage per diode (1)
Reverse current per diode (2)
VF
V
IF = 5 A
IF = 7.5 A
IF = 15 A
0.38
0.44
0.57
-
-
TA = 125 °C
0.65
TA = 25 °C
-
20
1.2
45
VR = 60 V
IR
mA
TA =125°C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VT3060C
VFT3060C
VBT3060C
VIT3060C
UNIT
per diode
per device
2.5
1.7
6.0
4.8
2.5
1.7
2.5
1.7
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT3060C-E3/4W
VFT3060C-E3/4W
VBT3060C-E3/4W
VBT3060C-E3/8W
VIT3060C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
1.89
1.76
1.39
1.39
1.46
4W
4W
4W
8W
4W
50/tube
50/tube
50/tube
800/reel
50/tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
35
14
12
10
8
D = 0.8
V(B,I)T3060C
D = 0.5
30
25
20
15
10
5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
VFT3060C
6
4
2
0
T
D = tp/T
12
tp
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
0
2
4
6
8
10
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Figure 2. Forward Power Dissipation Characteristics Per Diode
Figure 1. Maximum Forward Current Derating Curve
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89134
Revision: 08-Sep-09
New Product
VT3060C, VFT3060C, VBT3060C & VIT3060C
Vishay General Semiconductor
100
10
1
10
Junction to Case
VFT3060C
TA = 150 °C
V(B,I)T3060C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
1
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Transient Thermal Impedance Per Diode
100
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
1000
0.1
TA = 25 °C
0.01
0.001
100
0.1
1
10
100
20
30
40
50
60
70
80
90
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89134
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
VT3060C, VFT3060C, VBT3060C & VIT3060C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
7° REF.
0.113 (2.87)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.103 (2.62)
0.122 (3.08) DIA.
0.145 (3.68)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.135 (3.43)
0.580 (14.73)
PIN
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.104 (2.65)
0.096 (2.45)
0.020 (0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.350 (8.89)
0.330 (8.38)
0.381 (9.68)
0.950 (24.13)
0.510 (12.95)
0.470 (11.94)
PIN
0.920 (23.37)
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 3
PIN 2
0.045 (1.14)
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89134
Revision: 08-Sep-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
VBT3080C-M3/4W
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 80V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2
VISHAY
VBT3080C-M3/8W
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 80V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2
VISHAY
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