VS-10CSH02-M3/86A [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, SMPC, 3 PIN;
| 型号： | VS-10CSH02-M3/86A |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, SMPC, 3 PIN 软恢复二极管 超快速软恢复二极管 PC 光电二极管 |
| 文件： | 总7页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-10CSH02-M3
Vishay Semiconductors
www.vishay.com
Hyper Fast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyper fast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
K
K
Anode 1
Anode 2
1
• Low leakage current
Cathode
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
SMPC (TO-277A)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
State of the art hyper fast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyper fast recovery time.
Package
SMPC (TO-277A)
IF(AV)
2 x 5 A
200 V
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
VR
VF at IF
0.75 V
25 ns
trr (typ.)
These devices are intended for use in snubber, boost, as
high frequency rectifiers and freewheeling diodes.
TJ max.
Diode variation
175 °C
Dual die
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
200
V
per device
10
Average rectified forward current
Non-repetitive peak surge current
IF(AV)
TSp = 155 °C
per diode
per device
per diode
5
130
A
IFSM
TJ = 25 °C
70
Operating junction and storage temperatures
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
200
-
-
V
IF = 5 A
-
-
-
-
-
0.92
0.75
-
0.98
0.82
2
Forward voltage, per diode
VF
IF = 5 A, TJ = 150 °C
VR = VR rated
Reverse leakage current, per diode
Junction capacitance
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
6
80
-
CT
17
Revision: 12-May-17
Document Number: 94974
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CSH02-M3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
MIN.
TYP.
25
-
MAX.
UNITS
-
-
-
-
-
-
-
-
-
25
-
Reverse recovery time
trr
ns
18
28
2
TJ = 125 °C
-
IF = 5 A
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
Peak recovery current
IRRM
A
3.8
18
53
-
VR = 160 V
-
Reverse recovery charge
Qrr
nC
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-55
-
175
°C
Thermal resistance, junction
to solder pad, per leg
RthJ-Sp
RthJA
-
-
2.5
80
3.5
-
°C/W
°C/W
Thermal resistance, junction
to ambient, per leg
0.1
g
Approximate weight
Marking device
0.0035
oz.
Case style SMPC (TO-277A)
SCH2
100
100
10
175 °C
150 °C
10
1
125 °C
TJ = 175 °C
0.1
0.01
1
TJ = 150 °C
0.001
25 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 12-May-17
Document Number: 94974
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CSH02-M3
Vishay Semiconductors
www.vishay.com
100
6
5
4
3
2
1
0
RMS limit
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
10
0
50
100
150
200
0
1
2
3
4
5
6
7
8
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
175
40
35
30
25
20
15
10
5
125 °C
25 °C
DC
170
165
160
155
Square wave (D = 0.50)
80 % rated VR applied
IF = 5 A
See note (1)
0
1
2
3
4
5
6
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
90
IF = 5 A
70
50
30
10
125 °C
25 °C
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 12-May-17
Document Number: 94974
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CSH02-M3
Vishay Semiconductors
www.vishay.com
10
Typical, junction to case
Steady state value
1
0.1
Single pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance, Junction to Case
100
10
Steady state value
Typical, junction to ambient
1
Single pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance, Junction to Ambient
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 12-May-17
Document Number: 94974
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CSH02-M3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
10
C
S
H
02 -M3
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (10 = 10 A)
Circuit configuration:
2
3
C = common cathode
4
5
-
-
S = SMPC package
Process type,
H = hyper fast recovery
Voltage code (02 = 200 V)
6
7
-
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
13" diameter plastic tape and reel
VS-10CSH02-M3/86A
VS-10CSH02-M3/87A
1500
6500
1500
6500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95570
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95565
www.vishay.com/doc?88869
www.vishay.com/doc?96095
Revision: 12-May-17
Document Number: 94974
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-277A (SMPC)
DIMENSIONS in inches (millimeters)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 03-Sep-14
Document Number: 95570
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-10CSH02HM3/86A
Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, SMPC, 3 PIN
VISHAY
VS-10CTQ150-1-M3
Rectifier Diode, Schottky, 1 Phase, 2 Element, 150V V(RRM), Silicon, TO-262AA,
VISHAY
VS-10CTQ150SPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3
VISHAY
VS-10CTQ150STRLPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3
VISHAY
VS-10CTQ150STRRPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明