VS-12CTQ035PBF_15 [VISHAY]
Schottky Rectifier;
| 型号： | VS-12CTQ035PBF_15 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Rectifier |
| 文件： | 总8页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
FEATURES
Base
common
cathode
• 175 °C TJ operation
• Center tap TO-220 package
2
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
Anode
Anode
TO-220AB
Common
cathode
3
1
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
TO-220AB
2 x 6 A
• Designed and qualified according to JEDEC-JESD47
IF(AV)
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
VR
35 V, 40 V, 45 V
0.53 V
VF at IF
DESCRIPTION
I
RM max.
7 mA at 125 °C
175 °C
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
TJ max.
Diode variation
EAS
Common cathode
8 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
12
UNITS
Rectangular waveform
Range
A
V
35 to 45
690
tp = 5 μs sine
A
VF
6 Apk, TJ = 125 °C (per leg)
Range
0.53
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
VS-
VS-
VS-
VS-
VS-
VS-
PARAMETER
SYMBOL
UNITS
12CTQ035PbF 12CTQ035-N3 12CTQ040PbF 12CTQ040-N3 12CTQ045PbF 12CTQ045-N3
Maximum DC
reverse voltage
VR
35
35
40
40
45
45
V
Maximum working
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
6
IF(AV)
50 % duty cycle at TC = 160 °C, rectangular waveform
A
A
per device
12
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
690
Following any rated load
condition and with rated
VRRM applied
IFSM
140
8
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.20
Revision: 22-Aug-11
Document Number: 94130
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.60
0.73
0.53
0.64
0.8
UNITS
6 A
TJ = 25 °C
12 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
6 A
TJ = 125 °C
12 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage curent per leg
See fig. 2
(1)
IRM
V
R = Rated VR
mA
7.0
Threshold voltage
VF(TO)
rt
0.35
18.23
400
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
LS
8.0
nH
dV/dt
10 000
V/µs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
3.50
1.75
0.50
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
12CTQ035
Marking device
Case style TO-220AB
12CTQ040
12CTQ045
Revision: 22-Aug-11
Document Number: 94130
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
100
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1
10
TJ = 75 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.001
TJ = 50 °C
TJ = 25 °C
0.0001
1
0.2
0
5
10 15 20 25 30 35 40 45
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
0.1
0.01
t1
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 22-Aug-11
Document Number: 94130
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
175
170
165
160
155
150
5.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.75
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
4
8
10
2
0
2
4
6
8
10
6
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 22-Aug-11
Document Number: 94130
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
C
T
Q
045 PbF
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (12 = 12 A)
Circuit configuration:
C = Common cathode
Package:
1
2
3
-
4
T = TO-220
035 = 35 V
040 = 40 V
045 = 45 V
-
-
-
Schottky “Q” series
Voltage ratings
5
6
7
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-12CTQ035PbF
VS-12CTQ035-N3
VS-12CTQ040PbF
VS-12CTQ040-N3
VS-12CTQ045PbF
VS-12CTQ045-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
50
50
50
50
1000
1000
1000
1000
1000
1000
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
TO-220AB PbF
TO-220AB -N3
Part marking information
Revision: 22-Aug-11
Document Number: 94130
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
B
Seating
plane
A
A
(6)
Thermal pad
E
Ø P
0.014 B A
A
(E)
M
M
(7)
E2
A1
1
3
Q
2
D
D
C
(6)
(H1)
H1
(2)
L1
(7)
C
(6)
D2
D
Detail B
(6)
D1
3 x b
3 x b2
1
3
2
Detail B
C
E1 (6)
L
(b, b2)
b1, b3
Base metal
Plating
View A - A
c1
(4)
c
c
A
2 x e
e1
(4)
A2
Section C - C and D - D
M
M
0.015 B A
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.398
0.270
-
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MAX.
0.183
MIN.
10.11
6.86
-
MAX.
10.51
8.89
0.76
2.67
5.28
6.48
14.02
3.82
3.73
3.00
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
E
E1
E2
e
3, 6
6
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
7
2.41
4.88
6.09
13.52
3.32
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.139
0.102
b1
b2
b3
c
c1
D
4
4
e1
H1
L
6, 7
2
L1
Ø P
Q
4
3
D1
D2
90° to 93°
90° to 93°
6
Notes
(1)
(2)
(3)
(7)
(8)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
(4)
(5)
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Vishay:
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12CTQ045STRR VS-12CTQ035PBF VS-12CTQ040PBF VS-12CTQ045PBF VS-12CTQ045STRLPBF VS-
12CTQ035STRRPBF
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