VS-12TQ040STRR-M3 [VISHAY]
DIODE SCHOTTKY 40V 15A D2PAK;
| 型号： | VS-12TQ040STRR-M3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE SCHOTTKY 40V 15A D2PAK 二极管 |
| 文件： | 总7页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
1
3
1
3
• Guard ring for enhanced ruggedness and long term
reliability
N/C
Anode
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
IF(AV)
15 A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VR
35 V, 40 V, 45 V
0.50 V
VF at IF
DESCRIPTION
I
RM typ.
70 mA at 125 °C
150 °C
The VS-12TQ...S-M3 Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
TJ max.
EAS
16 mJ
D2PAK (TO-263AB)
Package
Circuit configuration
Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
15
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
Range
35 to 45
990
tp = 5 μs sine
15 Apk, TJ = 125 °C
Range
A
0.50
V
TJ
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-12TQ035S-M3
35
VS-12TQ040S-M3
VS-12TQ045S-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
40
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
15
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated VRRM applied
990
250
16
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
Non-repetitive avalanche energy
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current
2.4
Revision: 07-May-2020
Document Number: 94925
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.56
0.71
0.50
0.64
1.75
110
UNITS
15 A
TJ = 25 °C
30 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
15 A
TJ = 125 °C
30 A
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
(1)
(1)
Maximum reverse leakage current
IRM
IRM
VR = Rated VR
VR = Rated VR
mA
Typical reverse leakage current
Maximum junction capacitance
Typical series inductance
70
mA
pF
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
900
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +150
°C
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
RthCS
2.0
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
12TQ030S
12TQ044S
12TQ045S
Case style D2PAK (TO-263AB)
1000
100
1000
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
10
1
0.1
0.01
TJ = 50 °C
TJ = 25 °C
0.1
0.001
0
5
10 15 20 25 30 35 40 45
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 07-May-2020
Document Number: 94925
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t1
t2
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
155
145
135
125
115
12
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
12TQ
RthJC (DC) = 2.0 °C/W
10
8
RMS limit
6
DC
4
DC
2
0
0
2
4
6
8
10 12 14 16 18 20 22
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 07-May-2020
Document Number: 94925
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 07-May-2020
Document Number: 94925
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
Q
045
S
TRL -M3
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating
2
3
4
5
6
7
Package: T = TO-220
Schottky “Q” series
035 = 35 V
040 = 40 V
045 = 45 V
Voltage ratings
S = D2PAK (TO-263AB)
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
8
-
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-12TQ035S-M3
50
800
800
50
1000
800
VS-12TQ035STRR-M3
VS-12TQ035STRL-M3
VS-12TQ040S-M3
800
13" diameter reel
1000
800
Antistatic plastic tubes
13" diameter reel
VS-12TQ040STRR-M3
VS-12TQ040STRL-M3
VS-12TQ045S-M3
800
800
50
800
13" diameter reel
1000
800
Antistatic plastic tubes
13" diameter reel
VS-12TQ045STRR-M3
VS-12TQ045STRL-M3
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
Packaging information
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 07-May-2020
Document Number: 94925
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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