VS-15ETH03SPBF [VISHAY]
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| 型号： | VS-15ETH03SPBF |
| 厂家： | 
VISHAY |
| 描述： | 暂无描述 整流二极管 局域网 超快恢复二极管 快速恢复二极管 |
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VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
Base
cathode
2
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC-JESD47
1
3
Cathode Anode
TO-220AC
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Package
TO-220AC
15 A
IF(AV)
VR
300 V
VF at IF
1.25 V
t
rr typ.
See Recovery table
175 °C
TJ max.
Diode variation
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
300
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V
IF(AV)
TC = 142 °C
TJ = 25 °C
15
A
IFSM
140
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 15 A
300
-
-
V
-
-
-
-
-
-
1.05
0.85
0.05
12
1.25
1.00
40
Forward voltage
VF
IR
IF = 15 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 300 V
400
-
Junction capacitance
Series inductance
CT
LS
45
pF
Measured lead to lead 5 mm from package body
8
-
nH
Revision: 05-Apr-12
Document Number: 94000
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
40
-
Reverse recovery time
trr
32
ns
TJ = 125 °C
45
-
IF = 15 A
TJ = 25 °C
2.4
6.1
38
-
Peak recovery current
IRRM
dIF/dt = - 200 A/μs
TJ = 125 °C
A
-
V
R = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
137
-
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
1.02
-
2.0
70
-
Thermal resistance,
junction to ambient
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.2
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
15ETH03
Revision: 05-Apr-12
Document Number: 94000
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
100
1000
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
250
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
0.01
t2
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
.
Single pulse
(thermal resistance)
2. Peak TJ = PDM x ZthJC + TC
.
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 05-Apr-12
Document Number: 94000
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
100
IF = 15 A, TJ = 25 °C
DC
Square wave (D = 0.50)
Rated VR applied
I
F = 15 A, TJ = 125 °C
See note (1)
10
100
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
22
1000
20
18
16
14
12
10
8
IF = 15 A, TJ = 125 °C
RMS limit
D = 0.01
100
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
IF = 15 A, TJ = 25 °C
6
4
DC
2
10
100
0
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd +PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 05-Apr-12
Document Number: 94000
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 05-Apr-12
Document Number: 94000
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
H
03 PbF
1
2
3
4
5
6
7
1
-
-
-
-
Vishay Semiconductors product
Current rating (15 = 15 A)
E = Single diode
2
3
4
4
5
6
7
Package:
T = TO-220
-
-
-
H = Hyperfast recovery
Voltage rating (03 = 300 V)
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-15ETH03PbF
VS-15ETH03-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
1000
1000
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
www.vishay.com/doc?95224
www.vishay.com/doc?95068
TO-220ACPbF
TO-220AC-N3
Part marking information
Revision: 05-Apr-12
Document Number: 94000
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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www.vishay.com
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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