VS-15MQ040HM3/5AT [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, SMA, SIMILAR TO D-64, 2 PIN;
| 型号： | VS-15MQ040HM3/5AT |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, SMA, SIMILAR TO D-64, 2 PIN 光电二极管 |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-15MQ040HM3
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 1.5 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
Cathode
Anode
• Small footprint, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-214AC (SMA)
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
DO-214AC (SMA)
APPLICATIONS
• Switching power supplies
• Meter protection
IF(AV)
1.5 A
40 V
VR
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
VF at IF
IRM
0.34 V
20 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
6.0 mJ
DESCRIPTION
The VS-15MQ040HM3 Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
1.5
UNITS
Rectangular waveform
A
V
40
tp = 5 μs sine
2 Apk, TJ = 125 °C
Range
330
A
VF
0.43
V
TJ
-40 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-15MQ040HM3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
40
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50 % duty cycle at TL = 105 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
2.1
1.5
Maximum average forward current
See fig. 4
IF(AV)
A
50 % duty cycle at TL = 113 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1 A, L = 12 mH
Following any rated
load condition and with
rated VRRM applied
330
140
6.0
1.0
IFSM
EAS
IAR
A
Non-repetitive avalanche energy
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current
Revision: 02-Apr-15
Document Number: 94837
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15MQ040HM3
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.43
0.49
0.34
0.43
0.5
UNITS
1.5 A
TJ = 25 °C
2 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
1.5 A
TJ = 125 °C
2 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
IRM
VR = Rated VR
mA
20
Threshold voltage
VF(TO)
rt
0.26
64.6
134
V
TJ = TJ maximum
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
m
pF
CT
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
LS
2.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
-40 to +150
°C
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
80
°C/W
0.07
g
Approximate weight
0.002
oz.
Marking device
Case style SMA (similar D-64)
XF
Note
dPtot
1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
Revision: 02-Apr-15
Document Number: 94837
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15MQ040HM3
Vishay Semiconductors
www.vishay.com
10
150
140
130
120
110
100
90
DC
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1
80
70
60
50
Square wave (D = 0.50)
80 % rated VR applied
40
See note (1)
0.5
0.1
0.2
30
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
1.5
2.0
2.5
3.0
VFM - Forward Voltage Drop (V)
IF(AV) - Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
TJ = 150 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
10
TJ = 125 °C
TJ = 100 °C
1
D = 0.75
RMS limit
TJ = 75 °C
0.1
TJ = 50 °C
DC
0.01
TJ = 25 °C
0.001
0
0
5
10
15
20
25
30
35
40
0
0.5
1.0
1.5
2.0
2.5
3.0
IF(AV) - Average Forward Current (A)
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
100
10
1000
At any rated load condition
and with rated VRRM applied
following surge
TJ = 25 °C
100
0
5
10 15 20 25 30 35 40 45
10
100
10 000
1000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 02-Apr-15
Document Number: 94837
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15MQ040HM3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
H
M3
VS-
15
M
Q
040
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating
M = SMA
Q = Schottky “Q” series
Voltage rating (040 = 40 V)
H = AEC-Q101 qualified
Environmental digit:
M3 = Halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-15MQ040HM3/5AT
5AT 7500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
Packaging information
www.vishay.com/doc?95403
www.vishay.com/doc?95404
Revision: 02-Apr-15
Document Number: 94837
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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