VS-15TQ060S-M3 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2;
| 型号： | VS-15TQ060S-M3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2 二极管 |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-15TQ060S-M3
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 15 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
2
1
encapsulation for enhanced mechanical
strength and moisture resistance
3
1
3
• Guard ring for enhanced ruggedness and long term
reliability
N/C
Anode
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
IF(AV)
15 A
60 V
VR
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
0.56 V
I
RM max.
45 mA at 125 °C
150 °C
DESCRIPTION
TJ max.
EAS
The VS-15TQ060S-M3 Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
6 mJ
D2PAK (TO-263AB)
Package
Circuit configuration
Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
15
UNITS
Rectangular waveform
A
V
60
tp = 5 μs sine
15 Apk, TJ = 125 °C
Range
1000
A
VF
0.56
V
TJ
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-15TQ060S-M3
60
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 104 °C, rectangular waveform
VALUES
15
UNITS
Maximum average forward current
See fig. 5
IF(AV)
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
1000
260
IFSM
A
Non-repetitive avalanche energy
EAS
IAR
TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH
6
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current
1.50
Revision: 27-Oct-17
Document Number: 94927
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15TQ060S-M3
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.62
0.82
0.56
0.71
0.80
45
UNITS
15 A
TJ = 25 °C
30 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
15 A
TJ = 125 °C
30 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
(1)
IRM
VR = Rated VR
mA
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
720
pF
nH
8.0
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to 150
°C
Maximum thermal resistance,
DC operation
RthJC
RthCS
3.25
0.50
junction to case
See fig. 4
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth, and greased
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
Case style D2PAK (TO-263AB)
15TQ060S
1000
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
100
10
1
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
0.01
1
0.001
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
60
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 27-Oct-17
Document Number: 94927
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15TQ060S-M3
Vishay Semiconductors
www.vishay.com
1000
TJ = 25 °C
100
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
PDM
0.1
0.01
D = 0.33
D = 0.25
D = 0.20
t1
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
150
140
130
120
110
100
90
14
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
10
DC
8
6
4
2
0
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
80
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 27-Oct-17
Document Number: 94927
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15TQ060S-M3
Vishay Semiconductors
www.vishay.com
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
Device code
VS-
15
T
Q
060
S
TRL -M3
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (15 A)
2
3
4
5
6
7
Circuit configuration: T = TO-220
Schottky “Q” series
Voltage rating (060 = 60 V)
S = D2PAK (TO-263AB)
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
8
-
Revision: 27-Oct-17
Document Number: 94927
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15TQ060S-M3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-15TQ060S-M3
50
1000
800
VS-15TQ060STRR-M3
VS-15TQ060STRL-M3
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95444
www.vishay.com/doc?96424
www.vishay.com/doc?95600
Revision: 27-Oct-17
Document Number: 94927
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
D2PAK
Example: This is a xxxxxx (1) with
assembly lot code AC,
Part number
xxxxxx (1)
assembled on WW 02, 2010
V
ZYWWX
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 0 = 2010
Week 02
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant, and termination lead (Pb)-free
Halogen-free, RoHS-compliant, and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95444
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-15TQ060STRLPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3
VISHAY
VS-15TQ060STRR-M3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
VS-15TQ060STRRPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3
VISHAY
VS-160MT140KPBF
Bridge Rectifier Diode, 3 Phase, 160A, 1400V V(RRM), Silicon, ROHS COMPLIANT, MTK, 6 PIN
VISHAY
VS-160MT160KPBF
Bridge Rectifier Diode, 3 Phase, 160A, 1600V V(RRM), Silicon, ROHS COMPLIANT, MTK, 6 PIN
VISHAY
VS-16CDH02-M3/I
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, SMPD, 3/2 PIN
VISHAY
VS-16CDU06-M3/I
Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, SMPD, 3/2 PIN
VISHAY
VS-16CDU06HM3/I
Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, SMPD, 3/2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明