VS-175BGQ030HF4 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, ROHS COMPLIANT, POWERTAB-1;
| 型号： | VS-175BGQ030HF4 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, ROHS COMPLIANT, POWERTAB-1 局域网 二极管 |
| 文件： | 总6页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-175BGQ030HF4
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
Cathode
Anode
• Guard ring for enhanced ruggedness and
long term reliability
PowerTab®
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
PRODUCT SUMMARY
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Package
PowerTab®
IF(AV)
175 A
30 V
DESCRIPTION
VR
The VS-175BGQ030HF4 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
low voltage output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
VF at IF
IRM
0.52 V
650 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
80 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
TC
VALUES
175
UNITS
A
°C
V
IF(AV)
97
VRRM
IFSM
30
tp = 5 μs sine
175 Apk (typical)
TJ
7400
0.47
A
V
VF
TJ
150
°C
°C
Range
-55 to +150
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-175BGQ030HF4
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
30
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 97 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
175
A
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
7400
Maximum peak one cycle
non-repetitive surge current
IFSM
A
1400
80
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 12 A, L = 1.12 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
12
Revision: 16-Jun-15
Document Number: 93804
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030HF4
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.47
0.55
0.36
0.47
160
MAX.
0.49
0.59
0.39
0.52
220
UNITS
100 A
175 A
100 A
175 A
TJ = 25 °C
(1)
Forward voltage drop
VFM
V
TJ = 150 °C
TJ = 125 °C, VR = 15 V
TJ = 150 °C, VR = 30 V
TJ = 25 °C
1400
1.3
2000
4.5
(1)
Reverse leakage current
IRM
mA
VR = Rated VR
TJ = 125 °C
450
650
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured from tab to mounting plane
Rated VR
8500
3.5
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +150
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
0.35
0.20
°C/W
Typical thermal resistance,
case to heatsink
5
g
Approximate weight
0.18
oz.
minimum
1.2 (10)
2.4 (20)
N · m
Mounting torque
Marking device
(lbf · in)
maximum
Case style PowerTab®
175BGQ030H
1000
100
10 000
1000
150 °C
125 °C
100 °C
75 °C
100
10
TJ = 150 °C
50 °C
25 °C
1
10
TJ = 125 °C
TJ = 25 °C
0.1
0.01
1
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
VR - ReverseVoltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 16-Jun-15
Document Number: 93804
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030HF4
Vishay Semiconductors
www.vishay.com
10 000
TJ = 25 °C
1000
0
5
10
15
20
25
30
35
VR - ReverseVoltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.5
D = 0.2
0.1
D = 0.1
Single Pulse
(Thermal Resistance)
D = 0.05
D = 0.02
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
160
140
120
100
80
160
180°
RMS Limit
120°
90°
60°
30°
140
120
100
80
DC
DC
60
40
Square wave (d = 0.5)
60
rated VR applied
20
0
40
0
50
100
150
200
250
300
0
50
100
150
200
250
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 16-Jun-15
Document Number: 93804
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030HF4
Vishay Semiconductors
www.vishay.com
10 000
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
R
g = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
1000
Note
(1)
10
100
1000
10 000
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 %
rated VR
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Device code
VS- 175 BGQ 030
H
F4
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (175 = 175 A)
Essential part number
Voltage rating (030 = 30 V)
H = AEC-Q101 qualified
Environmental digit:
F4 = RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-175BGQ030HF4
25
375
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
SPICE model
www.vishay.com/doc?95467
www.vishay.com/doc?95427
www.vishay.com/doc?95179
Application note
Revision: 16-Jun-15
Document Number: 93804
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
PowerTab®
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
1.35 (0.05)
1.20 (0.04)
15.60 (0.61)
14.80 (0.58)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
3.09 (0.12)
3.00 (0.11)
1.30 (0.05)
1.10 (0.04)
5.45 REF.
(0.21 REF.)
0.60 (0.02)
0.40 (0.01)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 08-Jun-15
Document Number: 95240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
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DIODE 45 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, POWERTAB-1, Rectifier Diode
VISHAY
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