VS-175BGQ030 [VISHAY]
DIODE 30 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, POWERTAB-1, Rectifier Diode;型号: | VS-175BGQ030 |
厂家: | VISHAY |
描述: | DIODE 30 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, POWERTAB-1, Rectifier Diode 局域网 二极管 |
文件: | 总7页 (文件大小:130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-175BGQ030
Vishay Semiconductors
www.vishay.com
Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
PowerTab®
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
PRODUCT SUMMARY
• Compliant to RoHS Directive 2002/95/EC
Package
PowerTab®
DESCRIPTION
IF(AV)
175 A
30 V
The VS-175BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
VR
VF at IF
IRM
0.52 V
650 mA at 125 °C
125 °C
TJ max.
Diode variation
EAS
Single die
80 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
TC
VALUES
175
UNITS
A
°C
V
IF(AV)
112
VRRM
IFSM
30
tp = 5 μs sine
175 Apk (typical)
TJ
7400
A
0.47
V
VF
TJ
150
°C
°C
Range
- 55 to 150
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-175BGQ030
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
30
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 112 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
175
A
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
7400
Maximum peak one cycle
non-repetitive surge current
IFSM
A
1400
80
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 12 A, L = 1.12 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
12
Revision: 04-Jul-11
Document Number: 94583
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.47
0.55
0.36
0.47
160
MAX.
0.49
0.59
0.39
0.52
220
UNITS
100 A
175 A
100 A
175 A
TJ = 25 °C
(1)
Forward voltage drop
VFM
V
TJ = 150 °C
TJ = 125 °C, VR = 15 V
TJ = 150 °C, VR = 30 V
TJ = 25 °C
1400
1.3
2000
4.5
(1)
Reverse leakage current
IRM
mA
VR = Rated VR
TJ = 125 °C
450
650
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured from tab to mounting plane
Rated VR
8500
3.5
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
0.25
0.20
°C/W
Typical thermal resistance,
case to heatsink
5
g
Approximate weight
0.18
oz.
minimum
maximum
1.2 (10)
2.4 (20)
N · m
Mounting torque
Marking device
(lbf · in)
Case style PowerTab®
175BGQ045
Revision: 04-Jul-11
Document Number: 94583
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030
Vishay Semiconductors
www.vishay.com
10000
1000
100
10
1000
100
10
150°C
125°C
100°C
75°C
50°C
1
25°C
0.1
Tj = 150°C
0.01
0
5
10
15
20
25
30
ReverseVoltage-VR(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T = 25 ° C
J
Tj = 125°C
Tj = 25°C
1
1000
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15 20 25 30 35
Forward Voltage Drop-VFM(V)
Reverse Voltage - V (V)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1,RectangularPulseDuration(Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 04-Jul-11
Document Number: 94583
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030
Vishay Semiconductors
www.vishay.com
160
140
120
100
80
160
140
120
100
80
180°
RMS Limit
120°
90°
60°
30°
DC
DC
60
Square wave (D=0.50)
80% rated Vr applied
40
20
see note (1)
0
60
0
50
100
150
200
250
0
50 100 150 200 250 300
AverageForwardCurrent-IF(AV)(A)
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10000
1000
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 04-Jul-11
Document Number: 94583
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-175BGQ030
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- 175 BGQ 030
1
2
3
4
1
2
3
4
-
-
-
-
Vishay Semiconductors product
Current rating
Essential part number
Voltage code = VRRM
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95427
www.vishay.com/doc?95179
Part marking information
SPICE model
Application note
Revision: 04-Jul-11
Document Number: 94583
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
PowerTab®
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
1.35 (0.05)
1.20 (0.04)
15.60 (0.61)
14.80 (0.58)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
3.09 (0.12)
3.00 (0.11)
1.30 (0.05)
1.10 (0.04)
5.45 REF.
(0.21 REF.)
0.60 (0.02)
0.40 (0.01)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 03-Aug-11
Document Number: 95240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号:
VS-175BGQ030HF4
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, ROHS COMPLIANT, POWERTAB-1
VISHAY
VS-175BGQ045
DIODE 45 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, POWERTAB-1, Rectifier Diode
VISHAY
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