VS-93MT160KPBF [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-93MT160KPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总10页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IO
55 A to 110 A
800 V to 1600 V
MT-K
DESCRIPTION
VRRM
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
Package
Circuit
Three phase bridge
MAJOR RATINGS AND CHARACTERISTICS
VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K
SYMBOL
CHARACTERISTICS
UNITS
55
85
90
85
110
85
A
IO
TC
°C
50 Hz
60 Hz
50 Hz
60 Hz
390
410
770
700
7700
950
1130
1180
6380
5830
63 800
IFSM
I2t
A
1000
4525
A2s
4130
I2t
VRRM
TStg
TJ
45 250
800 to 1600
-40 to 125
-40 to 125
A2s
V
Range
Range
Range
°C
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM, MAXIMUM
V
RRM, MAXIMUM
VRSM, MAXIMUM
I
RRM/IDRM,
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
TYPE
NUMBER
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
MAXIMUM
AT TJ = 125 °C
mA
REVERSE VOLTAGE
V
80
800
1000
1200
1400
1600
800
900
1100
1300
1500
1700
900
800
100
120
140
160
80
1000
1200
1400
1600
800
VS-5.MT...K
10
20
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
VS-9.MT...K
VS-11.MT...K
Revision: 27-Feb-14
Document Number: 94353
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES VALUES VALUES
5.MT...K 9.MT...K 11.MT...K
PARAMETER
SYMBOL
TEST CONDITIONS
120° rect. conduction angle
UNITS
55
85
90
85
110
85
A
Maximum DC output current at
case temperature
IO
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
390
410
330
345
770
700
540
500
7700
950
1130
1180
950
No voltage
reapplied
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
1000
800
ITSM
A
100%VRRM
reapplied
840
1000
6380
5830
4510
4120
63 800
Initial TJ = TJ max.
4525
4130
3200
2920
45 250
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100%VRRM
reapplied
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
Low level value of threshold
voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
1.17
1.45
1.09
1.27
4.10
1.04
1.27
3.93
V
High level value of threshold
voltage
VT(TO)2
rt1
(I > x IT(AV)), TJ maximum
Low level value on-state slope
resistance
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
12.40
m
High level value on-state slope
resistance
rt2
(I > x IT(AV)), TJ maximum
11.04
2.68
3.59
1.65
150
3.37
1.57
Maximum on-state voltage drop
VTM
dI/dt
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
V
Maximum non-repetitve
rate of rise of turned on current
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
A/μs
TJ = 25 °C, anode supply = 6 V, resistive load,
Maximum holding current
Maximum latching current
IH
IL
200
400
gate open circuit
mA
TJ = 25 °C, anode supply = 6 V, resistive load
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K 9.MT...K 11.MT...K UNITS
RMS isolation voltage
VISOL
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s
4000
V
Maximum critical rate of rise of
off-state voltage
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
dV/dt (1)
500
V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
5.MT...K 9.MT...K 11.MT...K UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
10
W
PG(AV)
IGM
2.5
TJ = TJ maximum
2.5
A
Maximum peak negative
gate voltage
- VGT
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Maximum required DC gate
VGT
voltage to trigger
Anode supply = 6 V,
resistive load
Maximum required DC gate
current to trigger
IGT
mA
Maximum gate voltage
VGD
IGD
0.25
6
V
that will not trigger
TJ = TJ maximum, rated VDRM applied
Maximum gate current
that will not trigger
mA
Revision: 27-Feb-14
Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
5.MT...K 9.MT...K 11.MT...K UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 40 to 125
°C
DC operation per module
0.18
1.07
0.19
1.17
0.14
0.86
0.15
0.91
0.12
0.70
0.12
0.74
DC operation per junction
Maximum thermal resistance,
junction to case
RthJC
120 °C rect. conduction angle per module
120 °C rect. conduction angle per junction
K/W
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and grased
0.03
to heatsink
to terminal
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6
3 to 4
Mounting
torque 10 %
Nm
g
Approximate weight
225
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
0.072
0.033
0.027
120°
90°
60°
30°
180°
0.055
0.027
0.023
120°
0.091
0.044
0.037
90°
60°
30°
5.MT...K
9.MT...K
11.MT...K
0.085
0.039
0.033
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.117
0.055
0.046
0.157
0.071
0.059
0.236
0.100
0.082
K/W
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130
120
110
100
90
1000
100
10
5.MT..K Series
TJ = 25 °C
TJ = 125 °C
120°
(Rect.)
+
-
~
5.MT..K Series
Per junction
80
1
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
94353_01
Total Output Current (A)
Fig. 1 - Current Ratings Characteristic
Instantaneous On-State Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
94353_02
Revision: 27-Feb-14
Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
220
200
180
160
140
120
100
80
220
5.MT..K Series
TJ = 125 °C
200
180
160
140
120
100
80
120°
(Rect.)
60
60
40
40
20
20
0
0
0
5
10 15 20 25 30 35 40 45 50 55
0
25
50
75
100
125
Total Output Current (A)
94353_03b
Maximum Allowable Ambient
94353_03a
Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
350
300
250
200
150
130
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
9.MT..K Series
120
110
100
90
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
120°
(Rect.)
+
-
~
5.MT..K Series
Per junction
80
1
10
100
0
20
40
60
80
100
94353_04
Number of Equal Amplitude Half
94353_06
Total Output Current (A)
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristic
400
1000
100
10
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
350
No voltage reapplied
Rated VRRM reapplied
300
250
200
150
TJ = 25 °C
TJ = 125 °C
9.MT..K Series
Per junction
5.MT..K Series
Per junction
1
0.01
0.1
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
94353_05
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
94353_07
Total Output Current
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
300
300
250
200
150
100
50
9.MT..K Series
TJ = 125 °C
250
200
150
100
50
120°
(Rect.)
0
0
0
25
50
75
100
125
0
10 20 30 40 50 60 70 80 90
94353_08b
Maximum Allowable Ambient
94353_08a
Total Output Current (A)
Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
850
800
750
700
650
600
550
500
450
400
130
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
11.MT..K Series
120
110
100
90
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
120°
(Rect.)
+
-
~
9.MT..K Series
Per junction
80
10
100
0
20
40
60
80
100
120
1
94353_09
Number of Equal Amplitude Half
94353_11
Total Output Current (A)
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Current Ratings Characteristic
1000
100
10
1000
900
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
800
700
600
500
400
300
No voltage reapplied
Rated VRRM reapplied
TJ = 25 °C
TJ = 125 °C
11.MT..K Series
Per junction
9.MT..K Series
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
0.1
1
94353_12
Instantaneous On-State Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
94353_10
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 27-Feb-14
Document Number: 94353
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
350
300
250
200
150
100
50
R
th
11.MT..K Series
TJ = 125 °C
S
A
0.12 K/W
300
250
200
150
100
50
= 0.058 K/W -
0.3 K/W
0.4 K/W
Δ
120°
(Rect.)
R
0
0
0
25
50
75
100
125
0
10 20 30 40 50 60 70 80 90 100 110
Maximum Allowable Ambient
94353_13b
Total Output Current
94353_13a
Temperature (°C)
Fig. 13 - Total Power Loss Characteristics
1000
900
800
700
600
500
400
1200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
1100
1000
900
800
700
600
500
400
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
11.MT..K Series
Per junction
11.MT..K Series
Per junction
1
10
100
0.01
0.1
1.0
94353_14
Number of Equal Amplitude Half
94353_15
Pulse Train Duration (s)
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
10
Steady state value
RthJC = 1.07 K/W
RthJC = 0.86 K/W
5.MT..K Series
11.MT..K Series
9.MT..K Series
1
RthJC = 0.70 K/W
(DC operation)
0.1
0.01
Per junction
0.001
0.001
0.01
0.1
1
10
94353_16
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
Revision: 27-Feb-14
Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Vishay Semiconductors
10
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
1
0.1
(a)
(b)
(1)
(4)
(3)
(2)
VGD
IGD
0.01
Frequency Limited by PG(AV)
5.MT...K, 9.MT...K, 11.MT...K Series
0.1
0.01
0.001
1
10
100
1000
94353_17
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
11
3
MT 160
K
S90 PbF
1
2
3
4
5
6
7
1
2
-
-
Vishay Semiconductors product
Current rating code:
5 = 55 A (average)
9 = 90 A (average)
11 = 110 A (average)
Circuit configuration code:
3
-
1 = Negative half-controlled bridge
2 = Positive half-controlled bridge
3 = Full-controlled bridge
4
5
6
-
-
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
-
PbF = Lead (Pb)-free
7
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
A
D
B
C
F
A
D
B
C
F
A
D
B
C
F
6
4
3
6
4
3
1
2
5
1
2
5
E
E
E
Full-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
Negative half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
Positive half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Document Number: 94353
Revision: 27-Feb-14
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Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
Screws M. x ꢀ08 length 1ꢀ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
.
ꢀ03
7. ꢀ0.
(ꢀ02 ꢀ0ꢀ1ꢁ
(209. ꢀ0ꢀ2ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Screws M. x ꢀ08 length 1ꢀ
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
7. ꢀ0.
.
ꢀ03
(209. ꢀ0ꢀ2ꢁ
(ꢀ02 ꢀ0ꢀ1ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
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2
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Document Number: 95004
Revision: 27-Aug-07
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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