VS-ETU1506STRRHM3 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2;
VS-ETU1506STRRHM3
型号: VS-ETU1506STRRHM3
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2

超快软恢复二极管 快速软恢复二极管
文件: 总8页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 15 A FRED Pt®  
FEATURES  
VS-ETU1506SHM3  
VS-ETU1506-1HM3  
• Low forward voltage drop  
• Ultrafast recovery time  
• 175 °C operating junction temperature  
• Low leakage current  
2
1
3
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
3
2
1
D2PAK  
TO-262  
• AEC-Q101 qualified  
Base  
cathode  
2
• Meets JESD 201 class 1 whisker test  
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION/APPLICATIONS  
State of the art, ultralow VF, soft-switching ultrafast rectifiers  
optimized for Discontinuous (Critical) Mode (DCM) Power  
Factor Correction (PFC).  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
The minimized conduction loss, optimized stored charge  
and low recovery current minimized the switching losses  
and reduce over dissipation in the switching element and  
snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
VR  
VF at IF  
1.9 V  
APPLICATIONS  
trr (typ.)  
TJ max.  
Diode variation  
24 ns  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units, and DVD AC/DC power supplies.  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
15  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
V
IF(AV)  
TC = 143 °C  
TC = 25 °C  
A
IFSM  
160  
Operating junction and storage  
temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.35  
1.1  
0.01  
20  
1.9  
1.3  
15  
200  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
12  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 30-Sep-13  
Document Number: 94853  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
-
-
-
24  
28  
47  
-
36  
Reverse recovery time  
trr  
ns  
40  
TJ = 125 °C  
87  
-
IF = 15 A  
TJ = 25 °C  
5
-
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
A
TJ = 125 °C  
9.0  
107  
430  
53  
-
VR = 390 V  
TJ = 25 °C  
-
Reverse recovery charge  
Qrr  
C
TJ = 125 °C  
-
Reverse recovery time  
Peak recovery current  
Reverse recovery charge  
trr  
-
ns  
A
IF = 15 A  
IRRM  
Qrr  
TJ = 125 °C  
dIF/dt = 800 A/μs  
25  
-
VR = 390 V  
730  
-
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
- 65  
-
175  
°C  
Thermal resistance,  
junction to case  
RthJC  
RthJA  
RthCS  
-
-
-
1.3  
-
1.51  
70  
-
°C/W  
Thermal resistance,  
junction to ambient  
Typical socket mount  
Thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6
(5)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style D2PAK modified  
Case style TO-262  
ETU1506SH  
ETU1506-1H  
Revision: 30-Sep-13  
Document Number: 94853  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
100  
1000  
175 °C  
150 °C  
125 °C  
100 °C  
75 °C  
100  
10  
TJ = 175 °C  
1
10  
0.1  
TJ = 150 °C  
50 °C  
0.01  
0.001  
0.0001  
25 °C  
500  
TJ = 25 °C  
1.5  
1
0.5  
0
100  
200  
300  
400  
600  
1.0  
2.0  
2.5  
Reverse Voltage - VR (V)  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
1000  
100  
10  
1
0
100  
200  
300  
400  
500  
600  
ReverseVoltage-VR (V)  
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage  
10  
D = 0.5  
D = 0.2  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
0.1  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
t1, Rectangular Pulse Duration (s)  
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics  
Revision: 30-Sep-13  
Document Number: 94853  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
180  
170  
160  
150  
140  
130  
120  
30  
RMS Limit  
25  
20  
15  
10  
5
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
DC  
DC  
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
AverageForwardCurrent-IF(AV) (A)  
Average Forward Current - IF(AV) (A)  
Fig. 6 - Forward Power Loss Characteristics  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
120  
900  
110  
100  
90  
800  
700  
600  
500  
400  
300  
200  
10  
IF = 15 A, 125 °C  
IF = 15 A, 125 °C  
80  
70  
60  
50  
40  
IF = 15 A, 25 °C  
IF = 15 A, 25 °C  
30  
20  
10  
typical value  
typical value  
0
100  
1000  
100  
1000  
dIF/dt (A/μs)  
dIF/dt (A/μs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 9 - Reverse Recovery Waveform and Definitions  
Revision: 30-Sep-13  
Document Number: 94853  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
E
T
U
15  
06  
S
TRL  
H
M3  
1
2
3
4
5
6
7
8
9
10  
-
-
Vishay Semiconductors product  
1
Circuit configuration  
E = Single diode  
2
-
-
-
-
-
-
-
T = TO-220  
3
4
5
6
7
U = Ultrafast recovery time  
Current code (15 = 15 A)  
Voltage code (06 = 600 V)  
• S = D2PAK  
• -1 = TO-262  
• None = Tube (50 pieces)  
8
-
-
-
-
• TRL = Tape and reel (left oriented, for D2PAK package)  
• TRR = Tape and reel (right oriented, for D2PAK package)  
H = AEC-Q101 qualified  
9
M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free  
10  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER TUBE  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tube  
Antistatic plastic tube  
13" diameter reel  
VS-ETU1506SHM3  
VS-ETU1506-1HM3  
VS-ETU1506STRRHM3  
VS-ETU1506STRLHM3  
50  
50  
1000  
1000  
800  
800  
800  
800  
13" diameter reel  
LINKS TO RELATED DOCUMENTS  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95444  
www.vishay.com/doc?95443  
www.vishay.com/doc?95032  
TO-263AB (D2PAK)  
TO-262AA  
Part marking information  
Packaging information  
TO-263AB (D2PAK)  
Revision: 30-Sep-13  
Document Number: 94853  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
D2PAK  
DIMENSIONS in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
MIN.  
(0.38)  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
Lead assignments  
L3  
A1  
Lead tip  
(b, b2)  
L
Diodes  
L4  
Section B - B and C - C  
Scale: None  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
Detail “A”  
Rotated 90 °CW  
Scale: 8:1  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outmost extremes of the plastic body  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Outline conforms to JEDEC outline TO-263AB  
Document Number: 95046  
Revision: 31-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
TO-262  
DIMENSIONS in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(4)  
(5)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Dimension b1 and c1 apply to base metal only  
Controlling dimension: inches  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Document Number: 95419  
Revision: 04-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1

相关型号:

VS-ETU3006-1-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

VS-ETU3006-1HM3

Rectifier Diode,
VISHAY

VS-ETU3006-M3

Ultrafast Rectifier, 30 A FRED Pt
VISHAY

VS-ETU3006FP-M3

Ultrafast Rectifier, 30 A FRED Pt®
VISHAY

VS-ETU3006S-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY

VS-ETU3006STRL-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY

VS-ETU3006STRLHM3

Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-ETU3006STRR-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY

VS-ETX0806-M3

Hyperfast Rectifier, 8 A FRED Pt
VISHAY

VS-ETX0806FP-M3

Hyperfast Rectifier, 8 A FRED Pt
VISHAY

VS-ETX1506-1-M3

DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

VS-ETX1506-M3

Hyperfast Rectifier, 15 A FRED Pt
VISHAY