VS-HFA04SD60STR-M3 [VISHAY]
Ultrasoft recovery;
| 型号： | VS-HFA04SD60STR-M3 |
| 厂家： | 
VISHAY |
| 描述： | Ultrasoft recovery |
| 文件： | 总8页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
HEXFRED®,
Ultrafast Soft Recovery Diode, 4 A
FEATURES
2, 4
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
1
N/C
3
• Guaranteed avalanche
Anode
TO-252AA (D-PAK)
• Specified at operating temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
BENEFITS
• Reduced RFI and EMI
Package
TO-252AA (D-PAK)
4 A
IF(AV)
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
VR
600 V
VF at IF
1.4 V
t
rr typ.
17 ns
TJ max.
150 °C
• Reduced parts count
Diode variation
Single die
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
TC = 100 °C
4
IFSM
25
16
A
Repetitive peak forward current
Maximum power dissipation
IFRM
TC = 116 °C
TC = 100 °C
PD
10
W
Operating junction and storage temperatures
TJ, TStg
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
600
-
-
IF = 4 A
IF = 8 A
-
-
-
-
-
-
-
1.5
1.8
1.4
0.17
44
1.8
2.2
1.7
3.0
300
8
V
Forward voltage
See fig. 1
VF
IF = 4 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IR
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
4
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 10-Jul-15
Document Number: 93473
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
-
UNITS
-
-
-
-
-
-
-
-
-
17
Reverse recovery time
trr
28
42
57
5.2
6.7
60
105
-
ns
TJ = 125 °C
38
TJ = 25 °C
2.9
3.7
40
Peak recovery current
IRRM
A
IF = 4 A
TJ = 125 °C
dIF/dt = 200 A/μs
TJ = 25 °C
V
R = 200 V
Reverse recovery charge
Qrr
nC
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
70
280
235
Rate of fall of recovery current dI(rec)M/dt
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-55
-
150
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
5.0
80
°C/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf ⋅ in)
Mounting torque
Marking device
-
Case style TO-252AA (D-PAK)
HFA04SD60S
Revision: 10-Jul-15
Document Number: 93473
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
100
10
1
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0.001
0.1
0
100
200
300
400
500
0
1
2
3
4
5
6
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Single pulse
Notes:
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 93473
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
50
40
30
20
200
180
160
140
120
100
80
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
60
VR = 200 V
TJ = 125 °C
TJ = 25 °C
40
20
100
100
1000
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
1000
IF = 8 A
IF = 4 A
12
10
8
IF = 8 A
IF = 4 A
6
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2
100
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 10-Jul-15
Document Number: 93473
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 93473
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60S-M3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- HF
A
04
SD
60
S
TR -M3
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (04 = 4 A)
D-PAK
Voltage rating (60 = 600 V)
S = D-PAK
TR = tape and reel
R = tape and reel (right oriented)
L = tape and reel (left oriented)
Environmental digit:
-
9
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-HFA04SD60S-M3
VS-HFA04SD60STR-M3
VS-HFA04SD60SL-M3
VS-HFA04SD60SR-M3
75
3000
2000
3000
3000
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
Packaging information
www.vishay.com/doc?95176
www.vishay.com/doc?95033
Revision: 10-Jul-15
Document Number: 93473
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
MIN.
B
Seating
plane
D1
(6.23)
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
(2) L5
Detail “C”
A
0.06
MIN.
b
0.010
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
Lead tip
(7)
C
Gauge
plane
C
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 applied to base metal only
(6)
(7)
(8)
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
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