VS-HFA08SD60STRLPBF [VISHAY]
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode;
| 型号： | VS-HFA08SD60STRLPBF |
| 厂家： | 
VISHAY |
| 描述： | DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode 通用无线电 二极管 |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery time
2, 4
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Guaranteed avalanche
1
3
• Specified at operating conditions
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
N/C
Anode
D-PAK (TO-252AA)
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
8 A
IF(AV)
• Reduced parts count
VR
600 V
VF at IF
1.7 V
DESCRIPTION
trr typ.
18 ns
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
TJ max.
Diode variation
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
TC = 100 °C
8
IFSM
60
A
Peak repetitive forward current
Maximum power dissipation
IFRM
24
14
PD
TC = 100 °C
W
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
600
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
,
IR = 100 μA
-
-
VR
IF = 8 A
-
-
-
-
-
-
-
1.4
1.7
1.4
0.3
100
10
1.7
2.1
1.7
5.0
500
25
V
Forward voltage
VF
IF = 16 A
See fig. 1
See fig. 3
IF = 8 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IR
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 14-Jun-11
Document Number: 94042
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
18
MAX.
-
UNITS
-
-
-
-
-
-
-
-
-
Reverse recovery time
trr
37
55
90
5.0
8.0
138
360
-
ns
TJ = 125 °C
55
TJ = 25 °C
3.5
4.5
65
Peak recovery current
IRRM
A
IF = 8 A
TJ = 125 °C
dIF/dt = 200 A/μs
TJ = 25 °C
VR = 200 V
Reverse recovery charge
Rate of fall of recovery current
Qrr
nC
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
124
240
210
dI(rec)M/dt
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction
and storage temperature range
TJ, TStg
- 55
-
150
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
3.5
80
°C/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
Marking device
Case style D-PAK
HFA08SD60S
Revision: 14-Jun-11
Document Number: 94042
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
100
10
1
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
0.1
0.4
0
100
200
300
400
500
600
0.8
1.6
2.4
3.2
4.0
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
t2
0.1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 14-Jun-11
Document Number: 94042
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
80
70
60
50
40
30
20
10
500
400
300
200
100
0
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
20
10 000
1000
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
15
10
5
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
1000
100
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 14-Jun-11
Document Number: 94042
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 14-Jun-11
Document Number: 94042
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08SD60SPbF
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
SD
60
S
TR PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (08 = 8 A)
D-PAK
Voltage rating (60 = 600 V)
S = D-PAK
TR = Tape and reel
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
-
9
PbF = Lead (Pb)-free
P = Lead (Pb)-free (for TRR and TRL)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Part marking information
Packaging information
Revision: 14-Jun-11
Document Number: 94042
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
(6.74)
M
C A B
b3
0.010
MIN.
c2
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
(6.23)
B
MIN.
Seating
plane
D1
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
(2) L5
Detail “C”
A
0.06
(1.524)
b
MIN.
c
b2
C A B
0.010
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
Lead tip
(7)
C
Gauge
plane
C
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
(7)
(8)
Dimension b1 and c1 applied to base metal only
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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