VS-HFA08TA60CSTRLP [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 4A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2;
| 型号： | VS-HFA08TA60CSTRLP |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 4A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2 功效 光电二极管 |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
D2PAK
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Base
common
cathode
2
BENEFITS
• Reduced RFI and EMI
2
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
1
3
Common
cathode
Anode
Anode
• Reduced parts count
DESCRIPTION
VS-HFA08TA60CSPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CSPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CSPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
IF(AV)
8 A
600 V
VR
VF at IF
2.2 V
trr (typ.)
TJ max.
Diode variation
17 ns
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
4
Maximum continuous forward current
IF
TC = 100 °C
8
A
Single pulse forward current
IFSM
IFRM
25
Maximum repetitive forward current
16
25
TC = 25 °C
Maximum power dissipation
PD
W
TC = 100 °C
10
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 26-Feb-16
Document Number: 94596
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 4.0 A
IF = 8.0 A
-
-
-
-
-
-
-
1.5
1.8
1.4
0.17
44
1.8
2.2
1.7
3.0
300
8.0
-
V
Maximum forward voltage
VFM
See fig. 1
IF = 4.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
4.0
8.0
pF
nH
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
17
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5, 6 and 16
trr1
28
42
ns
trr2
TJ = 125 °C
38
57
IRRM1
IRRM2
Qrr1
TJ = 25 °C
2.9
3.7
40
5.2
6.7
60
Peak recovery current
See fig. 7 and 8
A
TJ = 125 °C
IF = 4.0 A
dIF/dt = 200 A/μs
TJ = 25 °C
Reverse recovery charge
See fig. 9 and 10
V
R = 200 V
nC
Qrr2
TJ = 125 °C
70
105
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
280
235
-
-
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
5.0
80
K/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style D2PAK
HFA08TA60CS
Revision: 26-Feb-16
Document Number: 94596
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.01
TJ = 25 °C
0.1
0.001
0
100
200
300
400
500
0
1
2
3
4
5
6
VFM - Forward Voltage Drop (V)
94596_02
VR - Reverse Voltage (V)
94596_01
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
94596_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
t1
t2
0.1
Single pulse
(thermal resistance)
Notes:
D = 0.01
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94596_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Feb-16
Document Number: 94596
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
200
160
120
80
50
45
40
35
30
25
20
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
40
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
1000
100
1000
94596_07
dIF/dt (A/μs)
94596_05
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
12
10
8
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
6
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2
0
100
100
100
1000
1000
94596_06
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
94596_08
dIF/dt (A/μs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 26-Feb-16
Document Number: 94596
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Feb-16
Document Number: 94596
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TA60CSPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
TA
60
C
S
TRL PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator: A = Electron irradiated
Current rating (08 = 8 A)
Package outline (TA = TO-220, 3 leads)
Voltage rating (60 = 600 V)
Circuit configuration (C = Common cathode)
S = D2PAK
•
•
•
•
•
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
PbF = Lead (Pb)-free, for tube packaged
-
10
P = Lead (Pb)-free, for tape and reel packaged
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-HFA08TA60CSPBF
VS-HFA08TA60CSTRRP
VS-HFA08TA60CSTRLP
50
1000
800
800
800
800
13" diameter reel
Revision: 26-Feb-16
Document Number: 94596
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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