VS-SD400C24C [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 800A, 2400V V(RRM), Silicon, DO-200AA,;
| 型号： | VS-SD400C24C |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 800A, 2400V V(RRM), Silicon, DO-200AA, 高压大电源 高功率电源 二极管 |
| 文件： | 总7页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Hockey PUK Version), 800 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style DO-200AA
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-200AA
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
• Power supplies
IF(AV)
800 A
• Machine tool controls
• High power drives
• Medium traction applications
Package
DO-200AA
Single Diode
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
800
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
1435
IF(RMS)
IFSM
I2t
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
8250
A
8640
340
kA2s
311
VRRM
TJ
400 to 2400
- 40 to 190
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 150 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
04
08
12
16
20
24
400
800
500
900
1200
1600
2000
2400
1300
1700
2100
2500
VS-SD400C..C
15
Revision: 15-Apr-14
Document Number: 93547
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
800 (425)
55 (85)
1435
8250
8640
6940
7265
340
UNITS
A
Maximum average forward current
at heatsink temperature
Double side (single side) cooled
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
50 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
311
Maximum I2t for fusing
I2t
kA2s
241
50 % VRRM
reapplied
220
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
3400
0.80
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
V
0.83
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.55
mΩ
High level value of forward
slope resistance
rf2
0.53
1.86
Ipk = 1930 A, TJ = TJ maximum, tp = 10 ms sinusoidal
wave
Maximum forward voltage drop
VFM
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 190
°C
Maximum storage temperature range
TStg
- 55 to 200
0.163
DC operation single side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
DC operation double side cooled
0.073
Mounting force, 10 %
Approximate weight
Case style
4900 (500)
70
N (kg)
g
See dimensions - link on page 5
DO-200AA
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.017
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
0.018
0.020
0.025
0.036
0.062
0.011
0.020
0.027
0.038
0.065
0.012
0.020
0.027
0.038
0.062
180°
120°
90°
0.020
0.025
TJ = TJ maximum
K/W
0.037
60°
0.064
30°
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 93547
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
200
180
160
140
120
100
80
200
180
160
140
120
100
80
SD 400C..C Series
(Single Side Cooled)
SD 400C..C Series
(Double Side Cooled)
R
(DC) = 0.163 K/W
thJ-hs
R
(DC) = 0.073 K/W
thJ-hs
Conduction Angle
Conduction Period
30°
60°
90°
60
120°
800
60
40
180°
90°
60°
40
120°
20
180°
30°
DC
0
20
0
400
1200
1600
0
100
200
300
400
500
600
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2000
200
SD400C..C Series
1800
1600
1400
1200
1000
800
180
160
140
120
100
80
(Single Side Cooled)
180°
120°
90°
R
(D C) = 0.163 K/W
thJ-hs
60°
30°
RMS Lim it
Conduction Period
600
Conduction Angle
60
400
90°
SD 400C..C Series
40
60°
120°
200
T
= 190 °C
J
30°
180°
DC
0
20
0
200
4 00
600
800
1000
0
100 200 300 400 500 600 700 800 900
Average Forw ard Current (A)
Average Forw ard Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
2500
D C
200
SD 400C..C Series
180
160
140
120
100
80
(Double Side Cooled)
R
(DC) = 0.073 K/W
180°
thJ-hs
2000
120°
90°
RM S Lim it
60°
30°
1500
1000
500
0
Conduction Angle
30°
60°
Conduction Period
60
90°
120°
40
180°
SD400C..C Series
20
T
= 190 °C
J
0
0
400
800
1200
1600
0
200
4 00
60 0
800
1000
Average Forw ard Current (A)
Average Forw ard Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Apr-14
Document Number: 93547
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
9000
8000
7000
6000
5000
4000
3000
2000
8000
7000
6000
5000
4000
3000
2000
M axim um Non Repetitive Surge Current
Versus Pulse Train Duration.
At Any Rated Load Condition And W ith
Rated V
Applied Following Surge.
RRM
Initial T = 190 °C
Initial T = 190 °C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No V oltage Reapplied
Rated V
Reapplied
RRM
SD400C..C Series
SD400C..C Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Num ber Of Equal Amp litude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T
J
= 25 °C
T
= 190 °C
J
1000
SD400C..C Series
100
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Instantaneous Forw ard Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.163 K/W
R
thJ-hs
(Single Side Cooled)
= 0.073 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
SD400C..C Series
0.001
0.01
0.1
Square W ave Pulse Duration (s)
1
10
Fig. 10 - Thermal Impedance ZthJC Characteristics
Revision: 15-Apr-14
Document Number: 93547
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- SD 40
0
C
24
C
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
Diode
1
2
3
4
5
6
7
Essential part number
0 = Standard recovery
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95248
Revision: 15-Apr-14
Document Number: 93547
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-200AA
DIMENSIONS in millimeters (inches)
3.5 (0.14) 0.1 (0.004) DIA. NꢀM. ꢁ
1.8 (0.07) deep MIN. both ends
0.3 (0.01) MIN.
both ends
19 (0.75) DIA. MAX.
2 places
38 (1.50) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95248
Revision: 06-Nov-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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