VS-SD400N24PC [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 480A, 2400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN;
| 型号： | VS-SD400N24PC |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 480A, 2400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN 二极管 |
| 文件： | 总7页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-SD400N/R Series
Vishay Semiconductors
www.vishay.com
Standard Recovery Diodes
(Stud Version), 400 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
• Designed and qualified for industrial level
DO-205AB (DO-9)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
IF(AV)
400 A
• Power supplies
Package
DO-205AB (DO-9)
Single diode
• Machine tool controls
• High power drives
Circuit configuration
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
480
UNITS
A
IF(AV)
TC
120
°C
IF(RMS)
630
50 Hz
60 Hz
50 Hz
60 Hz
Range
8250
A
IFSM
8640
340
I2t
kA2s
311
VRRM
TJ
1600 to 2400
-40 to 190
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
16
20
24
1600
2000
2400
1700
2100
2500
VS-SD400N/R
15
Revision: 25-Nov-13
Document Number: 93548
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
Vishay Semiconductors
www.vishay.com
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 110 °C case temperature
VALUES
400
UNITS
A
°C
A
120
Maximum average forward current
at case temperature
480
100
°C
Maximum RMS forward current
IF(RMS)
630
t = 10 ms
8250
8640
6940
7270
340
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
100 % VRRM
reapplied
Sinusoidal half wave,
initial
TJ = TJ maximum
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
311
Maximum I2t for fusing
I2t
kA2s
241
100 % VRRM
reapplied
220
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
3400
kA2s
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
0.80
0.85
0.55
V
High level value of threshold voltage
(I > x IF(AV)), TJ = TJ maximum
Low level value of forward
slope resistance
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
mW
V
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.51
1.62
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
Maximum forward voltage drop
VFM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 190
-55 to 200
0.11
UNITS
Maximum junction operating
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Not-lubricated threads
0.04
Maximum allowed
mounting torque 10 %
27
Nm
g
Approximate weight
Case style
250
See dimensions (link at the end of datasheet)
DO-205AB (DO-9)
Revision: 25-Nov-13
Document Number: 93548
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
Vishay Semiconductors
www.vishay.com
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.020
0.023
0.029
0.042
0.073
0.013
0.023
0.031
0.044
0.074
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
190
180
170
160
150
140
130
120
110
100
190
180
170
160
150
140
130
120
110
SD 400N/ R Se r ie s
thJC
SD 400N/ R Se r ie s
(DC) = 0.11 K/W
R
(DC) = 0.11 K/W
R
thJC
Conduction Angle
Conduction Period
90°
120°
90°
60°
60°
120°
30°
180°
DC
30°
180°
0
100 200 300 400 500 600 700
Average Forward Current (A)
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
550
500
180°
120°
450
90°
60°
30°
400
350
300
250
200
150
100
50
RMS Limit
1
K/W
Conduction Angle
SD400N/R Series
= 190 °C
T
J
0
0
50 100 150 200 250 300 350 400 30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Revision: 25-Nov-13
Document Number: 93548
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
Vishay Semiconductors
www.vishay.com
800
700
600
500
DC
180°
120°
90°
60°
30°
400
300
200
100
0
RMS Limit
Conduction Period
SD400N/R Series
T
= 190°C
J
0
100 200 300 400 500 600 700 30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Ambient Temperature (°C)
9000
8000
7000
6000
5000
4000
3000
2000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
8000
Initial T = 190°C
Initial T = 190°C
J
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
7000
Rated V
Reapplied
RRM
6000
5000
4000
3000
2000 SD 400N / R Se r ie s
SD 400 N/ R Se r ie s
1000
0.01
0.1
Pulse Tra in Dura t ion (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
SD 400N / R Se r ie s
T = 25° C
J
T = 190° C
J
100
0.5
1
1.5
2
2.5
In st a n t a ne o us Fo rw a rd Vo lt a g e (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 25-Nov-13
Document Number: 93548
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
Vishay Semiconductors
www.vishay.com
1
St e a d y St a t e V a lu e :
= 0.11 K/W
R
thJC
(DC Operation)
0.1
0.01
SD 400N/ R Se ri e s
1
0.001
0.001
0.01
0.1
10
Sq u a r e W a v e Pu lse D u r a t io n ( s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
VS-
SD
40
0
N
24
P
C
6
7
1
2
3
4
5
8
1
-
-
Vishay Semiconductors product
Diode
2
3
4
5
-
-
-
Essential part number
0 = Standard recovery
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
6
7
8
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
C = Ceramic housing
For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95301
Revision: 25-Nov-13
Document Number: 93548
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
*For metric device: M16 x 1.5
contact factory
Document Number: 95301
Revision: 09-Apr-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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