VS-ST083S10PFK1P [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST083S10PFK1P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总10页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
Inverter Grade Thyristors (Stud Version), 85 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
IT(AV)
TO-94 (TO-209AC)
TYPICAL APPLICATIONS
• Inverters
Single SCR
85 A
• Choppers
V
DRM/VRRM
VTM
400 V, 800 V, 1000 V, 1200 V
• Induction heating
2.15 V
2450 A
2560 A
200 mA
85 °C
• All types of force-commutated converters
I
I
TSM at 50 Hz
TSM at 60 Hz
IGT
TC/Ths
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
85
UNITS
A
°C
A
IT(AV)
TC
85
IT(RMS)
135
50 Hz
60 Hz
50 Hz
60 Hz
2450
A
ITSM
2560
A
30
I2t
kA2s
27
VDRM/VRRM
400 to 1200
10 to 20
-40 to +125
V
tq
Range
μs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAX.
AT TJ = TJ MAX.
mA
VOLTAGE
CODE
TYPE NUMBER
04
08
10
12
400
800
500
900
VS-ST083S
30
1000
1200
1100
1300
Revision: 24-Jan-18
Document Number: 94334
1
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VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 μs
180° el
180° el
50 Hz
210
200
150
70
120
120
80
330
350
320
220
50
270
210
190
85
2540
1190
630
250
50
1930
810
400
100
50
400 Hz
A
V
1000 Hz
2500 Hz
25
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
50
50
50
VDRM
VDRM
VDRM
50
60
50
85
-
-
-
-
A/μs
°C
60
85
60
85
22/0.15
22/0.15
22/0.15
W/μF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
UNITS
A
85
85
Maximum average on-state current at
case temperature
180° conduction, half sine wave
DC at 77 °C case temperature
°C
Maximum RMS on-state current
IT(RMS)
135
2450
2560
2060
2160
30
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
27
Maximum I2t for fusing
I2t
kA2s
21
100 % VRRM
reapplied
19
Maximum I2t for fusing
I2t
VTM
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
300
2.15
1.46
1.52
2.32
2.34
600
1000
kA2s
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
V
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
m
rt2
IH
TJ = 25 °C, IT > 30 A
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
SWITCHING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
dI/dt
td
TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
0.80
A/μs
of turned on current
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Typical delay time
μs
TJ = TJ maximum, ITM = 100 A,
commutating dI/dt = 10 A/μs
Maximum turn-off time
tq
10
20
V
R = 50 V, tp = 200 μs, dV/dt = 200 V/μs
Revision: 24-Jan-18
Document Number: 94334
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
40
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
5
+VGM
-VGM
IGT
TJ = TJ maximum, tp 5 ms
20
5
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM/VRRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.195
UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthCS
DC operation
K/W
Mounting surface, smooth, flat, and greased
0.08
15.5
(137)
Non-lubricated threads
N · m
(lbf · in)
Mounting torque, 10 %
14
(120)
Lubricated threads
Approximate weight
Case style
130
g
See dimensions - link at the end of datasheet
TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.034
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 24-Jan-18
Document Number: 94334
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
130
120
110
100
90
ST083S Series
RthJC (DC) = 0.195 K/W
ST083S Series
RthJC (DC) = 0.195 K/W
Ø
Ø
Conduction period
Conduction angle
30°
60°
90°
120°
80
30°
60° 90° 120° 180°
180°
100
DC
120
80
70
0
10 20 30 40 50 60 70 80 90
0
20
40
60
80
140
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
180
160
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
Ø
60
60
Conduction angle
40
40
ST083S Series
TJ = 125 °C
20
20
0
0
0
10 20 30 40 50 60 70 80 90
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
250
200
150
100
50
250
200
150
100
50
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
ST083S Series
TJ = 125 °C
0
0
0
20
40
60
80
100
120
140
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 24-Jan-18
Document Number: 94334
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
2200
2000
1800
1600
1400
1200
1000
1
At any rated load condition and with
rated VRRM applied following surge
Steady state value
RthJC = 0.195 K/W
(DC operation)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
ST083S Series
ST083S Series
0.01
0.001
1
10
100
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 5 - Maximum Non-Repetitive Surge Current
160
140
2600
ITM = 500 A
ITM = 300 A
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
ST083S Series
TJ = 125 °C
2400
2200
2000
1800
1600
1400
1200
1000
120
100
80
ITM = 200 A
ITM = 100 A
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
60
ITM = 50 A
40
ST083S Series
20
10 20 30 40 50 60 70 80 90 100
0.01
0.1
1
Pulse Train Duration (s)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
10 000
120
ITM = 500 A
ITM = 300 A
110
100
90
80
70
60
50
40
30
20
10
ITM = 200 A
ITM = 100 A
TJ = 25 °C
1000
TJ = 125 °C
ITM = 50 A
ST083S Series
TJ = 125 °C
ST083S Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
10 20 30 40 50 60 70 80 90 100
Instantaneous On-State Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 24-Jan-18
Document Number: 94334
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VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
10 000
1000
100
10 000
1000
100
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
100
200
50 Hz
100
50 Hz
1000
400
1500
1000
500
2000
2500
3000
1500
2000
2500
400
500
200
3000
ST083S Series
Sinusoidal pulse
TC = 60 °C
ST083S Series
Sinusoidal pulse
TC = 85 °C
tp
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST083S Series
Trapezoidal pulse
TC = 85 °C
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
dI/dt = 50 A/µs
500
1000
100
10
50 Hz
50 Hz
1500
2500
500
200 100
400
2000
100
1500
1000
200
100
400
1000
ST083S Series
Trapezoidal pulse
TC = 60 °C
3000
2000
tp
2500
100
dI/dt = 50 A/µs
10
10
1000
10 000
10
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST083S Series
Snubber circuit
Trapezoidal pulse Rs = 22 Ω
TC = 85 °C
dI/dt = 100 A/µs
Cs = 0.15 µF
VD = 80 % VDRM
tp
1000
100
10
400
1000
50 Hz
400
50 Hz
500
200
100
1500
2000
500
200 100
1500
1000
2500
2000
ST083S Series
Trapezoidal pulse
TC = 60 °C
3000
2500
100
tp
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 24-Jan-18
Document Number: 94334
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
10 000
1000
100
10 000
1000
100
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
20 joules per pulse
tp
20 joules
per pulse
7.5
10
5
3
2
1
4
0.5
2
0.3
0.2
1
0.5
0.3
0.2
0.1
0.1
ST083S Series
Sinusoidal pulse
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
10
Rectangular gate pulse
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST083S Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 24-Jan-18
Document Number: 94334
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST083SP Series
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- ST
08
3
S
12
P
F
N
0
L
P
1
2
3
4
5
6
7
8
9
10
11
12
1
2
3
4
- Vishay Semiconductors product
- Thyristor
- Essential part number
- 3 = fast turn-off
- S = compression bonding stud
5
6
7
- Voltage code x 100 = VRRM (see Voltage Ratings table)
-
P = stud base 1/2"-20UNF-2A threads
M = metric M12, contact factory for availability
8
9
- Reapplied dV/dt code (for tq test condition)
dV/dt - tq combinations available
- tq code
dV/dt (V/µs)
200
10
12
20
FN
FM
FK
-
0 = eyelet terminals (gate and aux. cathode leads)
1 = fast-on terminals (gate and aux. cathode leads)
2 = flag terminals (gate and aux. cathode leads)
tq (µs)
10
up to 800 V
tq (µs)
only for
1000 V/1200 V
20
FK
- Critical dV/dt:
11
12
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
- None = standard production; P = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
Revision: 24-Jan-18
Document Number: 94334
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Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST083S and ST103S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37) MIN.
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Red shrink
70 (2.75)
MIN.
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95003
Revision: 30-Sep-08
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1
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Revision: 08-Feb-17
Document Number: 91000
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