VS-ST330C16C1L [VISHAY]
SCR 1600V 1420A E-PUK;
| 型号： | VS-ST330C16C1L |
| 厂家： | 
VISHAY |
| 描述： | SCR 1600V 1420A E-PUK |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST330C Series
Vishay Semiconductors
www.vishay.com
Phase Control Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Designed and qualified for industrial level
RoHS
COMPLIANT
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
E-PUK (TO-200AB)
TYPICAL APPLICATIONS
• DC motor controls
PRIMARY CHARACTERISTICS
• Controlled DC power supplies
• AC controllers
IT(AV)
720 A
V
DRM/VRRM
400 V, 800 V, 1200 V, 1400 V, 1600 V
1.96 V
VTM
IGT
100 mA
TJ
-40 °C to +125 °C
E-PUK (TO-200AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
720
UNITS
A
°C
A
IT(AV)
IT(RMS)
ITSM
I2t
Ths
55
1420
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
9420
405
kA2s
370
V
DRM/VRRM
400 to 1600
100
V
tq
Typical
μs
°C
TJ
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRMMAXIMUM
AT TJ = TJ
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
MAXIMUM mA
04
08
12
14
16
400
800
500
900
VS-ST330C..C
50
1200
1400
1600
1300
1500
1700
Revision: 27-Sep-17
Document Number: 94407
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330C Series
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
720 (350)
55 (75)
1420
9000
9420
7570
7920
405
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
370
Maximum I2t for fusing
I2t
kA2s
287
100 % VRRM
reapplied
262
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.91
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
V
0.92
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
0.58
m
V
rt2
0.57
VTM
IH
Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.96
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
1000
A/µs
Gate current 1 A, dIg/dt = 1 A/μs
Typical delay time
td
tq
1.0
Vd = 0.67 % VDRM, TJ = 25 °C
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM
,
IDRM
Revision: 27-Sep-17
Document Number: 94407
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-ST330C Series
Vishay Semiconductors
www.vishay.com
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
10.0
W
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
3.0
20
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
TJ = TJ maximum, tp 5 ms
A
V
+ VGM
- VGM
TJ = TJ maximum, tp 5 ms
5.0
TJ = -40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
Maximum required gate trigger/
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
V
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.09
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.04
K/W
0.02
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.01
9800
(1000)
N
(kg)
Approximate weight
Case style
83
g
See dimensions - link at the end of datasheet
E-PUK (TO-200AB)
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.012
0.014
0.017
0.025
0.043
0.011
0.012
0.015
0.022
0.036
0.008
0.014
0.019
0.026
0.043
0.007
0.013
0.017
0.023
0.037
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94407
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330C Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
130
120
110
100
90
ST330C..C Series
ST330C . . C Se rie s
(Single Side Cooled)
thJ-hs
(Double Side Cooled)
R
(DC) = 0.04 K/W
R
(DC) = 0.09 K/W
thJ-hs
80
Conduction Period
Conduction Angle
70
30°
60
50
60°
30°
60°
90°
90°
120°
40
120°
180°
180°
30
80
20
DC
10
70
0
200 400 600 800 10001200 1400 1600
Average On-state Current (A)
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
1400
ST330C . . C Se r ie s
180°
120°
90°
120
110
100
90
(Single Side Cooled)
1200
1000
800
600
400
200
0
R
(DC) = 0.09 K/W
thJ-hs
60°
RM S Lim it
30°
Conduction Period
80
70
60
Conduction Angle
ST330C . . C Se r ie s
50
60°
40
30°
90°
T = 125°C
J
30
120°
180°
DC
20
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
1800
DC
ST330C . . C Se r ie s
120
110
100
90
180°
(Double Side Cooled)
1600
120°
R
(DC) = 0.04 K/W
thJ-hs
1400
1200
1000
800
600
400
200
0
90°
60°
30°
RM S Lim it
80
Conduction Angle
70
60
Conduction Period
ST330C..C Series
30°
50
60°
90°
120°
40
180°
T = 125°C
J
30
20
0
200
400
600
800
1000
0
200 400 600 800 1000 1200
Average On-state Current (A)
Average On-state Current (A)
Fig.
3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94407
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330C Series
Vishay Semiconductors
www.vishay.com
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
Of Conduction May Not Be Maintained.
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST330 C . . C Se rie s
ST330C . . C Se rie s
0.01
0.1
Pulse Tra in Dura tion (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 25° C
J
T = 125° C
J
1000
ST330C..C Series
100
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
0.01
St e a d y St a t e V a lu e
= 0.09 K/ W
R
thJ-hs
(Single Side Cooled)
= 0.04 K/ W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST3 3 0C . . C Se r ie s
1
0.001
0.001
0.01
0.1
10
Sq u a r e W a v e Pu lse D u r a t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 27-Sep-17
Document Number: 94407
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330C Series
Vishay Semiconductors
www.vishay.com
100
Rectangulargate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66 ms
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
D e v ic e : ST330C . . C Se r ie s
0.1
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
33
0
C
16
C
1
-
1
2
3
4
5
6
7
8
9
1
2
3
-
-
Vishay Semiconductors product
Thyristor
-
-
Essential part number
0 = converter grade
4
5
6
7
8
-
-
-
-
C = ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case E-PUK (TO-200AB)
0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
9
-
Critical dV/dt:
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95075
Dimensions
Revision: 27-Sep-17
Document Number: 94407
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
C
G
14.1/15.1
(0.56/0.59)
A
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
Note:
A = Anode
40.5 (1.59) DIA. MAX.
C = Cathode
G = Gate
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95075
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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