BAS16BS [WEITRON]
SWITCHING DIODES 500m AMPERES 75 VOLTS;型号: | BAS16BS |
厂家: | WEITRON TECHNOLOGY |
描述: | SWITCHING DIODES 500m AMPERES 75 VOLTS 开关 |
文件: | 总3页 (文件大小:900K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS16BS
Surface Mount Switching
Diodes
SWITCHING DIODES
500m AMPERES
75 VOLTS
P b
Lead(Pb)-Free
Feature:
Small plastic SMD package.
*
* Continuous reverse voltage: max. 75 V.
High-speed switching in hybrid thick and thin-ꢀlm circuits.
*
SOD-882
SOD-882 Outline Dimensions
Unit:mm
MILLIMETERS
DIM
MIN
NOM
MAX
A
B
0.95
0.55
1.00
0.60
1.05
0.65
C
D
E
0.465 0.4825 0.5
0.39
0.127
0.0635
0.12
0.20
0.64
F
G
H
P
R
W
0.3
0.54
0.2
0.44
0.25
0.49
SOLDERING FOOTPRINT
WEITRON
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BAS16BS
Maximum Ratings (T =25˚C Unless otherwise noted)
A
Unit
Value
Symbol
Rating
Continuous Reverse Voltage
V
75
V
R
dc
IF
Peak Forward Current
mAdc
mAdc
200
500
IFM
Peak Forward Surge Current
Thermal Characteristics
Unit
Symbol
Max
Characteristic
mW
Total Device Dissipation FR-5 Board,*
T A= 25°C
200
mW/℃
℃/W
℃
Derate above 25°C
1.57
635
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
-55to+150
Tj,Tstg
**FR-4 Minimum Pad
(T =25˚C Unless otherwise noted)
A
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse
Voltage Leakage Current
1.0
50
30
(V R = 75 Vdc)
I
µAdc
Vdc
-
-
-
R
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
-
V
75
(BR)
(I BR = 100 µAdc)
Forward Voltage
715
855
(I F = 1.0 mAdc)
mV
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
VF
-
-
1000
1250
Diode Capacitance
2.0
-
-
-
pF
CD
-
-
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
V FR
1.75
Vdc
(I F = 10 mAdc, t r = 20 ns)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
T
-
-
rr
4.0
45
ns
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
Qs
-
pC
Device Marking
Marking
Item
Eqivalent Circuit diagram
2
1
3*
BAS16BS
Cathode
Anode
*Rotated 90°
WEITRON
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BAS16BS
2.0 k
820 Ω
+10 V
I F
t p
t r
t
0.1µF
I F
100 µH
0.1 µF
t rr
t
10%
90%
D U T
i
= 1.0 mA
R(REC)
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
IR
OUTPUT PULSE
INPUTSIGNAL
(I F = I R = 10 mA; MEASURED
V R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
TYPICALCHARACTERISTICS
100
10
T A = 150˚C
T A = 85˚C
T
A = 125˚C
1.0
T A = –40˚C
10
T A = 85˚C
0.1
T A = 25˚C
1.0
T
A = 55˚C
0.01
T A = 25˚C
0.1
0.001
0
10
20
30
40
0.2
0.4
0.6
0.8
1.0
1.2
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
WEITRON
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