WSD520BS-40 [WEITRON]
SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS;
| 型号： | WSD520BS-40 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS |
| 文件： | 总4页 (文件大小：1036K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD520BS-40
Surface Mount Schottky
Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
40 VOLTS
P b
Lead(Pb)-Free
Feature:
* Silicon Epitaxial Planar
* Extremelysmall Surface Mounting Type. (SOD-882)
* Low IR
* High Reliability
* We Declare That The Material of Product
Compliance With RoHS Requirements
Applications:
* Low current rectification and high speed switching
SOD-882
SOD-882 Outline Dimensions
Unit:mm
MILLIMETERS
DIM
MIN
NOM
MAX
A
B
0.95
0.55
1.00
0.60
1.05
0.65
C
D
E
0.465 0.4825 0.5
0.39
0.127
0.0635
0.12
0.20
0.64
F
G
H
P
R
W
0.3
0.54
0.2
0.44
0.25
0.49
SOLDERING FOOTPRINT
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WSD520BS-40
Maximum Ratings (T =25˚C Unless otherwise noted)
A
Unit
Limits
40
Symbol
Characteristic
V
R
Reverse voltage(repetitive peak)
V
V
40
DC Reverse Voltage
V
R
200
1
mA
Average Rectifier Forward Current
Peak Forward Surge Current
I
O
I
FSM
A
˚C
Junction Temperature Range
Storage Temperature Range
T
125
J
T
stg
-40 to +125
˚C
(T =25˚C Unless otherwise noted)
A
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit Conditions
V
Forward Voltage
-
I =10mA
F
0.39
V
V
F
Forward Voltage
Reverse Current
Reverse Current
V
-
0.55
I =100mA
F
F
I
R
1
µA
µA
V =10V
R
I
R
-
10
V =40V
R
Device Marking
Marking
Item
Eqivalent Circuit diagram
2
1
D1
WSD520BS-40
Cathode
Anode
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WSD520BS-40
Electrical Characteristic Curves
100
10
1
1000
100
10
1000
100
Ta=125℃
Ta=75℃
Ta=125℃
Ta=75℃
f=1MHｚ
10
1
Ta=25℃
Ta=25℃
1
0.1
Ta=-25℃
0.1
Ta=-25℃
0.01
0.001
0.0001
0.01
0.001
0
100 200 300
400 500
600
0
10
20
30
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
510
1000
900
800
700
600
500
400
300
200
100
0
50
45
40
35
30
25
20
15
10
5
Ta=25℃
VR=10V
n=30pcs
Ta=25℃
Ta=25℃
IF=100mA
n=30pcs
f=1MHz
VR=0V
n=10pcs
500
490
480
470
460
AVE:491.2mV
AVE:67.0nA
IR DISPERSION MAP
Ifsm
AVE:23.2pF
Ct DISPERSION MAP
Ifsm
0
VF DISPERSION MAP
15
10
5
10
30
1cyc
8.3ms
25
20
15
10
5
Ifsm
t
8.3ms 8.3ms
1cyc
5
AVE:5.60A
0
0
0
1
10
100
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISPERSION MAP
10000
1000
100
0.3
0.2
0.1
0.01
0.008
0.006
0.004
0.002
0
Mounted on epoxy board
IM=1mA
IF=200mA
D=1/2
time
300us
1ms
DC
Rth(j-a)
Rth(j-c)
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
0
0
10
0.001
0.01
0.1
1
10
100
1000
0.1
0.2
0.3
0.4
0.5
0
10
20
30
40
TIME:t(s)
Rth-t CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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WSD520BS-40
Electrical Characteristic Curves
0.5
0.4
0.3
0.2
0.1
0
0.5
Io
0A
0V
Io
VR
D=t/T
VR=20V
Tj=125℃
0A
0V
VR
t
0.4
0.3
0.2
D=t/T
VR=20V
t
DC
DC
T
Tj=125℃
T
D=1/2
D=1/2
0.1 Sin(θ＝180)
Sin(θ＝180)
0
0
25
50
75
100
125
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Ta)
Derating Curve (Io-Tc)
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