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WT-2306 [WEITRON]

Surface Mount N-Channel Enhancement Mode MOSFET; 表面贴装N沟道增强型MOSFET
WT-2306
型号： WT-2306
厂家： WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述：

Surface Mount N-Channel Enhancement Mode MOSFET
表面贴装N沟道增强型MOSFET
文件： 总6页 (文件大小：159K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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WT-2306  
Surface Mount N-Channel  
Enhancement Mode MOSFET  
DRAIN  
3
DRAIN CURRENT  
2.8 AMPERES  
1
DRAIN SOURCE VOLTAGE  
20 VOLTAGE  
Features:  
GATE  
*Super high dense cell design for low RDS(ON)  
2
SOURCE  
R
R
<70 m @V =4.0V  
GS  
Ω
DS(ON)  
DS(ON)  
<95 m @V =2.5V  
Ω
GS  
3
*Rugged and Reliable  
*SOT-23 Package  
1
2
SOT-23  
Maximum Ratings (TA=25 C Unless Otherwise Specified)  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Value  
20  
Unite  
V
DS  
V
GS  
V
V
A
A
A
+
8
-
(1)  
(1)  
Continuous Drain Current (T =125 C)  
J
I
D
2.8  
(2)  
Pulsed Drain Current  
I
12  
DM  
I
Drain-Source Diode Forward Current  
1.25  
1.25  
100  
S
(1)  
Power Dissipation  
P
W
D
Maximax Junction-to-Ambient  
R
C/W  
θ
JA  
Operating Junction and Storage  
Temperature Range  
T ,Tstg  
J
-55 to 150  
C
Device Marking  
WT2306=S06  
WEITRON  
http://www.weitron.com.tw  
WT-2306  
Electrical Characteristics (T =25 C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
(2)  
Static  
Drain-Source Breakdown Voltage  
=0V, I =250 uA  
V
(BR)DSS  
-
-
-
-
V
V
20  
0.6  
-
V
D
GS  
Gate-Source Threshold Voltage  
=V , I =250 uA  
V
GS (th)  
1.5  
V
D
DS GS  
Gate-Source Leakage Current  
+
-
I
100  
GSS  
nA  
uA  
+
=0V,V = 8V  
-
GS  
V
DS  
Zero Gate Voltage Drain Current  
=18V,V =0V  
I
-
-
DSS  
1
V
DS  
GS  
rDS (on)  
Drain-Source On-Resistance  
mΩ  
70  
95  
-
-
V
=4.0V, I =2.8A  
GS  
GS  
D
V
=2.5V, I =2.0A  
D
Forward Transconductance  
=7V, I =5A  
g
fs  
-
5
S
-
V
DS  
D
(3)  
Dynamic  
Input Capacitance  
=10V,V =0V, f=1MHZ  
C
-
-
iss  
-
-
608  
114  
86  
V
DS  
GS  
Output Capacitance  
=10V,V =0V, f=1MHZ  
C
oss  
PF  
V
DS  
GS  
Reverse Transfer Capacitance  
C
rss  
-
-
V
=10V,V =0V, f=1MHZ  
DS  
GS  
(3)  
Switching  
Turn-On Delay Time  
t
-
-
-
-
10  
14  
-
-
nS  
nS  
d(on)  
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω  
GEN  
L
GEN  
DD  
D
Rise Time  
t
r
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω  
GEN  
L
GEN  
DD  
D
Turn-Off Delay Time  
V
t
nS  
nS  
39  
26  
d(off)  
-
-
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω  
GEN  
L
GEN  
DD  
D
Fall Time  
t
f
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω  
GEN  
L
GEN  
DD  
D
Total Gate Charge  
=10V, I =1A,V =4.5V  
-
-
-
-
nc  
Qg  
9.2  
V
GS  
DS  
D
Gate-Source Charge  
=10V, I =1A,V =4.5V  
Qgs  
Qgd  
1.6  
2.6  
nc  
nc  
-
-
V
GS  
DS  
D
Gate-Drain Charge  
=10V, I =1A,V =4.5V  
V
GS  
DS  
D
Diode Forward Voltage  
Drain-Source  
-
0.84  
1.3  
VSD  
V
V
=0V, I =1.25A  
GS  
S
<
Note:  
_
1. Surface Mounted on FR4 Board t 10sec.  
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.  
2. Guaranteed by Design, not Subject to Production Testing.  
WEITRON  
http://www.weitron.com.tw  
WT-2306  
WE ITR ON  
25  
20  
15  
10  
10  
25 C  
Tj =125 C  
VGS=3V  
8
6
-55 C  
VGS=10,9,8,7,6,5,4V  
VGS=2V  
4
2
0
5
0
0.0 0.5  
1
1.5  
2
2.5  
3
1
2
3
4
5
6
V
GS  
, GATE-TO-SOURCE VOLTAGE(V)  
V
DS  
, DRAIN-TO-SOURCE VOLTAGE(V)  
FIG.2 Transfer Characteristics  
FIG.1. Output Characteristics  
2.2  
1.8  
VGS=4V  
ID=3A  
1100  
880  
660  
440  
1.4  
1.0  
Ciss  
0.6  
0.2  
0
220  
0
Coss  
25 30  
Crss  
0
5
10  
15  
20  
-50 -25  
0
25 50 75  
100 125  
T ( C)  
j
V
DS  
, DRAIN-TO-SOURCE VOLTAGE(V)  
FIG.4 On-Resistance Variation with  
Temperature  
FIG.3 Capacitance  
1.3  
1.2  
1.15  
VDS=V  
ID =250uA  
GS  
ID =250uA  
1.10  
1.1  
1.0  
0.9  
1.05  
1.00  
0.95  
0.90  
0.85  
0.8  
0.7  
0.6  
-50 -25  
0
25 50 75 100 125  
-50 -25  
0
25 50 75 100 125  
T ,JUNCTION TEMPERATURE( C)  
j
T ,JUNCTION TEMPERATURE( C)  
j
FIG.6 Breakdown Voltage Variation  
with Temperature  
FIG.5 Gate Threshold Variation  
with Temperature  
WEITRON  
http://www.weitron.com.tw  
WT-2306  
WE ITR ON  
18  
20  
10  
15  
12  
9
6
3
0
1
0
T
J
=25 C  
VDS=7V  
20 25  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
5
10  
15  
I
,DRAIN-SOURCE CURRENT(A)  
V
,BODY DIODE FORWARD VOLTAGE(V)  
SD  
DS  
FIG.7 Transconductance Variation  
with Drain Current  
FIG.8 Body Diode Forward Voltage  
Variation with Source Current  
50  
5
VDS=10V  
ID =1A  
4
10  
imit  
L
1
0
ms  
100ms  
(ON)  
DS  
R
3
2
1s  
1
1
D
C
VGS=4.5V  
0.1  
1
0
Single Pulse  
T =25 C  
C
0.03  
0.1  
1
10 20 50  
0
2
4
6
8
10 12 14 16  
V
DS  
,DRAIN-SOURCE CURRENT(V)  
Q ,TOTAL GATE CHARGE(nC)  
g
FIG.10 Maximum Safe Operating Area  
FIG.9 Gate Charge  
V
DD  
on  
t
t
off  
d(off)  
t
r
t
d(on)  
t
f
t
R
L
90%  
90%  
V
IN  
D
OUT  
V
OUT  
V
V
10%  
10%  
INVE R TE D  
V
G S  
R
G E N  
G
90%  
50%  
50%  
IN  
S
10%  
P ULS E WIDTH  
FIG.11 Switching Test Circuit  
FIG.12 Switching Waveforms  
WEITRON  
http://www.weitron.com.tw  
WT-2306  
WE ITR ON  
10  
1
0.5  
0.2  
0.1  
DM  
P
1
t
0.1  
2
t
0.05  
1. R jA (t)=r (t) * R j  
θ A  
θ
0.02  
2. R j =See Datasheet  
A
θ
3. Tj  
M-TA = PDM* R j (t)  
A
θ
Single Pulse  
0.01  
1
4. Duty Cycle, D=t /t  
2
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
SQUARE WAVE PULSE DURATION(SEC)  
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE  
WEITRON  
http://www.weitron.com.tw  
WT-2306  
SOT-23 Package Outline Dimensions  
Unit:mm  
A
Dim  
A
B
C
D
Min Max  
0.35 0.51  
1.19 1.40  
2.10 3.00  
0.85 1.05  
0.46 1.00  
1.70 2.10  
2.70 3.10  
0.01 0.13  
0.89 1.10  
0.30 0.61  
0.076 0.25  
B
TOP VIE W  
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON  
http://www.weitron.com.tw  

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