W24V04B-85LL [WINBOND]

Standard SRAM, 512KX8, 85ns, CMOS, CSP-36;
W24V04B-85LL
型号: W24V04B-85LL
厂家: WINBOND    WINBOND
描述:

Standard SRAM, 512KX8, 85ns, CMOS, CSP-36

静态存储器
文件: 总11页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary W24V04  
512K ´ 8 CMOS STATIC RAM  
GENERAL DESCRIPTION  
´
The W24V04 is a normal-speed, very low-power CMOS static RAM organized as 524288  
8 bits  
that operates on a wide voltage range from 2.3V to 2.7V power supply. The W24V04, W24V04-LE  
and W24V04-LI, can meet the requirement of various operating temperature. This device is  
manufactured using Winbond's high performance CMOS technology.  
FEATURES  
·
·
·
·
·
·
·
·
·
Low power consumption  
Access time: 85 nS  
2.3V to 2.7V supply voltage  
Fully static operation  
All inputs and outputs directly TTL compatible  
Three-state outputs  
Battery back-up operation capability  
Data retention voltage: 1.5V (min.)  
Packaged in 32-pin 450 mil SOP, standard  
´
type one TSOP (8 mm 20 mm), small type  
´
one TSOP (8 mm 13.4 mm) and 36-pin CSP  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
PRECHARGE CKT.  
CLK GEN.  
32  
31  
30  
29  
28  
1
2
VDD  
A15  
A17  
A18  
A16  
A18  
A17  
3
4
A14  
A16  
WE  
A13  
A8  
A12  
A7  
R
5
6
O
A15  
A14  
CORE CELL ARRAY  
1024 ROWS  
W
27  
26  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
7
A9  
A11  
D
E
C
O
D
E
R
32-pin  
SOP  
25  
24  
23  
22  
512 X 8 COLUMNS  
A13  
A12  
8
9
OE  
10  
A10  
A10  
A8  
11  
12  
CS  
21  
20  
19  
18  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
I/O1  
I/O2  
I/O3  
13  
14  
A7  
15  
16  
I/O1  
:
I/O8  
I/O CKT.  
COLUMN DECODER  
DATA  
CNTRL.  
V
SS  
17  
CLK  
GEN.  
A9 A6 A5 A4 A3 A2 A1A0  
A11  
1
2
3
4
A11  
A9  
A8  
A13  
WE  
WE  
32  
OE  
A10  
31  
30  
29  
28  
27  
26  
CS  
CS  
OE  
I/O8  
I/O7  
I/O6  
5
6
A17  
A15  
VDD  
A18  
A16  
A14  
I/O5  
I/O4  
VSS  
I/O3  
I/O2  
I/O1  
A0  
A1  
7
8
25  
24  
23  
22  
21  
20  
19  
18  
32-pin  
TSOP  
9
10  
11  
12  
PIN DESCRIPTION  
A12  
A7  
A6  
A5  
A4  
13  
14  
15  
16  
SYMBOL  
DESCRIPTION  
Address Inputs  
A2  
A3  
17  
-
A0 A18  
Data Inputs/Outputs  
Chip Select Input  
-
I/O1 I/O8  
36-pin CSP TOP VIEW  
CS  
WE  
OE  
1
2
3
4
5
6
Write Enable Input  
Output Enable Input  
Power Supply  
Ground  
NC  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A8  
A
I/O5  
I/O6  
VSS  
VCC  
I/O1  
I/O2  
VCC  
VSS  
I/O3  
I/O4  
A7  
WE  
NC  
B
C
D
E
DD  
V
A17  
A16  
A12  
A18  
I/O7  
F
G
H
A15  
A13  
OE  
A10  
CS  
A11  
I/O8  
A9  
SS  
V
A14  
NC  
No Connection  
Publication Release Date: January 2000  
Revision A1  
- 1 -  
Preliminary W24V04  
TRUTH TABLE  
DD  
CURRENT  
MODE  
Not Selected  
Output Disable  
Read  
V
I/O1-I/O8  
OE  
X
WE  
X
CS  
H
L
SB SB  
High Z  
High Z  
I
I
I
I
, I  
1
DD  
DD  
DD  
H
H
L
L
H
Data Out  
Data In  
L
X
L
Write  
DC CHARACTERISTICS  
Absolute Maximum Ratings  
PARAMETER  
RATING  
UNIT  
V
SS  
Supply Voltage to V Potential  
-0.5 to +4.6  
SS  
DD  
Input/Output to V Potential  
-0.5 to V +0.5  
V
Allowable Power Dissipation  
Storage Temperature  
1.0  
W
-65 to +150  
-20 to 85  
-40 to 85  
°
C
C
Operating Temperature  
LE  
LI  
°
°C  
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability  
of the device.  
Operating Characteristics  
(VSS = 0V; TA ( C) = -20 to 85 for LE, -40 to 85 for LI)  
°
PARAMETER  
SYM.  
TEST  
W24V04  
UNIT  
CONDITIONS  
MIN.  
MAX.  
DD  
V
Operating Power  
Voltage  
-
2.3  
2.7  
V
IL  
Input Low Voltage  
Input High Voltage  
V
-
-
-0.2  
+2.0  
-1  
+0.4  
V
V
IH  
DD  
+0.2  
V
V
LI  
IN  
SS  
DD  
DD  
Input Leakage  
Current  
I
V
V
= V to V  
+1  
mA  
LO  
I/O  
SS  
Output Leakage  
Current  
I
= V to V  
-1  
+1  
mA  
IH  
CS = V (min.) or  
IH  
OE = V (min.) or  
WE  
IL  
= V (max.)  
OL  
OL  
Output Low Voltage  
V
I
I
= +0.5 mA  
OH  
= -0.5 mA  
-
0.4  
-
V
V
OH  
Output High  
Voltage  
V
2.0  
- 2 -  
Preliminary W24V04  
Operating Characteristics, continued  
PARAMETER  
SYM.  
TEST  
W24V04  
UNIT  
CONDITIONS  
MIN.  
MAX.  
DD  
Operating Power  
Supply Current  
I
-
30  
mA  
CS  
IL  
= V (max.)  
I/O = 0 mA  
Cycle = min.  
Duty = 100%  
SB  
Standby Power  
Supply Current  
I
-
-
0.3  
5
mA  
IH  
CS  
= V (min.)  
Duty = 100%  
SB1  
I
mA  
DD  
V
CS  
³
-0.2V  
CAPACITANCE  
(TA = 25 C, f = 1 MHz)  
°
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYM.  
CONDITIONS  
MAX.  
8
UNIT  
pF  
IN  
IN  
V
C
= 0V  
I/O  
C
OUT  
V = 0V  
10  
pF  
Note: These parameters are sampled but not 100% tested.  
AC CHARACTERISTICS  
AC Test Conditions  
PARAMETER  
Input Pulse Levels  
CONDITIONS  
0V to 2.5V  
5 nS  
Input Rise and Fall Times  
Input and Output Timing Reference Level  
Output Load  
1.2V  
See the drawing below  
AC Test Loads and Waveform  
1 TTL  
1 TTL  
OUTPUT  
OUTPUT  
5 pF  
100 pF  
Including  
Jig and  
Scope  
Including  
Jig and  
Scope  
(For T  
T
T
T
T
T
)
CLZ, OLZ, CHZ, OHZ, WHZ, OW  
2.5V  
90%  
90%  
10%  
10%  
5 nS  
0V  
5 nS  
Publication Release Date: January 2000  
Revision A1  
- 3 -  
Preliminary W24V04  
AC Characteristics, continued  
(VSS = 0V; TA ( C) = -20 to 85 for LE, -40 to 85 for LI)  
°
Read Cycle  
PARAMETER  
SYM.  
W24V04  
UNIT  
MIN.  
MAX.  
-
RC  
Read Cycle Time  
T
85  
-
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
AA  
Address Access Time  
T
T
T
T
T
T
T
T
85  
85  
50  
-
ACS  
AOE  
CLZ  
Chip Select Access Time  
-
Output Enable to Output Valid  
Chip Selection to Output in Low Z  
Output Enable to Output in Low Z  
Chip Deselection to Output in High Z  
Output Disable to Output in High Z  
Output Hold from Address Change  
-
*
10  
5
OLZ  
*
-
CHZ  
*
-
35  
35  
-
OHZ  
OH  
*
-
10  
These parameters are sampled but not 100% tested  
*
Write Cycle  
PARAMETER  
SYM.  
W24V04  
UNIT  
MIN.  
85  
75  
75  
0
MAX.  
WC  
Write Cycle Time  
T
-
-
-
-
-
-
nS  
nS  
nS  
nS  
nS  
nS  
CW  
T
AW  
T
AS  
T
T
T
Chip Selection to End of Write  
Address Valid to End of Write  
Address Setup Time  
WP  
WR  
Write Pulse Width  
65  
0
Write Recovery Time  
CS WE  
,
DW  
DH  
Data Valid to End of Write  
Data Hold from End of Write  
Write to Output in High Z  
T
T
T
T
50  
0
-
-
nS  
nS  
nS  
nS  
WHZ  
OW  
*
-
35  
-
Output Active from End of Write  
8
These parameters are sampled but not 100% tested  
*
- 4 -  
Preliminary W24V04  
TIMING WAVEFORMS  
Read Cycle 1  
(Address Controlled)  
RC  
T
Address  
AA  
T
TOH  
OH  
T
D
OUT  
Read Cycle 2  
(Chip Select Controlled)  
CS  
T
ACS  
T
CHZ  
T
CLZ  
D
OUT  
Read Cycle 3  
(Output Enable Controlled)  
T
RC  
Address  
OE  
T
AA  
T
OH  
TAOE  
OLZ  
T
CS  
T
OHZ  
TACS  
CHZ  
T
T
CLZ  
D
OUT  
Publication Release Date: January 2000  
Revision A1  
- 5 -  
Preliminary W24V04  
Timing Waveforms, continued  
Write Cycle 1  
T
WC  
Address  
OE  
T
WR  
T
CW  
CS  
T
AW  
T
WE  
WP  
T
AS  
T
OHZ  
(1, 4)  
D
OUT  
T
T
DH  
DW  
D
IN  
Write Cycle 2  
OE  
IL  
(
= V Fixed)  
T
WC  
Address  
CS  
T
WR  
T
CW  
T
AW  
WE  
T
T
OH  
WP  
T
AS  
(2)  
(3)  
T
WHZ  
T
OW  
(1, 4)  
D
OUT  
DIN  
T
DH  
T
DW  
Notes:  
1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied.  
2. The data output from DOUT are the same as the data written to DIN during the write cycle.  
3. DOUT provides the read data for the next address.  
4. Transition is measured 500 mV from steady state with CL = 5 pF. This parameter is guaranteed but not 100% tested.  
±
- 6 -  
Preliminary W24V04  
DATA RETENTION CHARACTERISTICS  
(TA ( C) = -20 to 85 for LE; -40 to 85 for LI)  
°
PARAMETER  
SYM.  
TEST CONDITIONS  
MIN. TYP. MAX. UNIT  
DD  
DR  
V
for Data Retention  
V
1.5  
-
-
-
-
-
5
-
V
DD  
CS ³  
CS ³  
V
V
-0.2V  
DDDR  
CDR  
Data Retention Current  
I
m
A
DD  
DD =  
-0.2V, V  
3.0V  
Chip Deselect to Data  
Retention Time  
T
T
See data retention waveform  
0
nS  
R
RC  
Operation Recovery Time  
T
*
-
-
nS  
Read Cycle Time  
*
DATA RETENTION WAVEFORM  
VDD  
DD  
0.9 x V  
DD  
>
0.9 x V  
DR 1.5V  
V
=
T
CDR  
R
T
>
CS  
DD  
V
- 0.2V  
CS  
=
Publication Release Date: January 2000  
Revision A1  
- 7 -  
Preliminary W24V04  
ORDERING INFORMATION  
PART NO.  
ACCESS OPERATING VOLTAGE (V)  
OPERATING  
PACKAGE  
TIME  
/
TEMPERATURE  
(nS)  
STANDBY CURRENT  
(mA)  
(°C)  
W24V04B-85LE  
W24V04Q-85LE  
W24V04S-85LE  
W24V04T-85LE  
W24V04B-85LI  
W24V04Q-85LI  
W24V04S-85LI  
W24V04T-85LI  
W24V04B-85LL  
W24V04Q-85LL  
W24V04S-85LL  
W24V04T-85LL  
85  
85  
85  
85  
85  
85  
85  
85  
85  
85  
85  
85  
-20 to 85  
-20 to 85  
-20 to 85  
-20 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
0 to 70  
CSP  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 5 mA  
2.5V / 20 mA  
2.5V / 20 mA  
Small type one TSOP  
450 mil SOP  
Standard type one TSOP  
CSP  
Small type one TSOP  
450 mil SOP  
Standard type one TSOP  
CSP  
0 to 70  
Small type one TSOP  
450 mil SOP  
0 to 70  
2.5V / 20 A  
m
0 to 70  
Standard type one TSOP  
2.5V / 20 mA  
Notes:  
1. Winbond reserves the right to make changes to its products without prior notice.  
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications  
where personal injury might occur as a consequence of product failure.  
- 8 -  
Preliminary W24V04  
PACKAGE DIMENSIONS  
32-pin SOP Wide Body  
Dimension in Inches  
Dimension in mm  
Symbol  
A
Min. Nom. Max. Min. Nom. Max.  
3.00  
0.118  
0.111  
17  
32  
0.004  
0.101  
0.014  
0.006  
0.10  
2.57  
0.36  
0.15  
A
1
e1  
0.106  
0.016  
2.69  
0.41  
0.20  
2.82  
0.51  
A 2  
b
c
D
E
e
0.020  
0.012  
0.31  
0.008  
0.805  
0.445  
0.050  
20.75  
11.43  
1.42  
0.817  
0.450  
0.056  
20.45  
11.30  
1.27  
E H  
E
11.18  
1.12  
0.440  
0.044  
q
0.546  
0.023  
0.556  
0.031  
0.556  
0.039  
13.87  
0.58  
1.19  
14.12  
0.79  
14.38  
0.99  
HE  
L
L E  
L
0.047  
0.063  
0.036  
1.40  
0.055  
1.60  
0.91  
0.10  
Detail F  
1
16  
b
S
y
0.004  
10  
10  
0
0
q
Notes:  
1. Dimensions D Max. & S include mold flash  
or tie bar burrs.  
e1  
D
2. Dimension b does not include dambar  
protrusion/intrusion.  
c
3. Dimensions D & E include mold mismatch  
.
A
A
2
and determined at the mold parting line.  
4. Controlling dimension: Inches  
5. General appearance spec should be based  
on final visual inspection spec.  
e
S
y
L
E
A
1
See Detail F  
Seating Plane  
32-pin Standard Type One TSOP  
H D  
D
Dimension in Inches  
Dimension in mm  
Min. Nom. Max.  
Symbol  
Min. Nom.  
Max.  
__  
__  
__  
__  
A
1.20  
0.15  
1.05  
0.23  
0.047  
0.006  
c
__  
__  
0.002  
0.037  
0.05  
0.95  
A 1  
1
A
b
c
2
0.041  
0.009  
1.00  
0.20  
0.039  
M
e
0.007 0.008  
0.17  
0.12  
E
0.005 0.006  
0.720 0.724  
0.15  
0.17  
0.007  
0.728  
0.10(0.004)  
D
18.30 18.40 18.50  
b
0.311 0.315  
0.780 0.787  
7.90  
8.00  
8.10  
E
0.319  
19.80  
__  
20.00  
0.795  
__  
20.20  
__  
HD  
e
__  
0.020  
0.50  
0.50  
0.016 0.020  
0.40  
__  
0.60  
__  
L
0.024  
__  
__  
L 1  
0.031  
0.80  
__  
A
__  
0.000  
0.004  
5
0.10  
5
0.00  
1
Y
A2  
1
3
3
q
q
L
1
A
Y
L1  
Controlling dimension: Millimeters  
Publication Release Date: January 2000  
Revision A1  
- 9 -  
Preliminary W24V04  
Package Dimensions, continued  
32-pin Small Type One TSOP  
D
H
Dimension in Inches  
Dimension in mm  
Symbol  
Min.  
Max.  
Nom.  
Min. Nom.  
Max.  
D
c
1.25  
0.15  
1.05  
A
0.049  
1
0.002  
0.05  
0.006  
A
1
2
1.00  
0.037  
0.007  
0.041 0.95  
A
0.039  
e
0.008 0.009 0.17 0.20 0.27  
b
c
E
0.0056 0.0059 0.0062 0.14 0.15 0.16  
D
E
0.461  
0.311  
0.520  
0.469 11.70 11.80 11.90  
0.319 7.90 8.00 8.10  
0.536 13.20 13.40 13.60  
0.50  
0.465  
0.315  
b
D
0.528  
H
e
0.020  
0.020  
L
0.012  
0.027  
0.000  
0
0.028  
0.50 0.70  
0.30  
0.675  
1
L
2
A
A
0.00  
0
0.004  
5
0.10  
Y
q
A
q
1
L
3
3
5
Y
1
L
Controlling dimension: Millimeters  
- 10 -  
Preliminary W24V04  
VERSION HISTORY  
VERSION  
DATE  
PAGE  
DESCRIPTION  
A1  
Jan. 2000  
-
Initial Issued  
Winbond Electronics (H.K.) Ltd.  
Winbond Electronics North America Corp.  
Headquarters  
Rm. 803, World Trade Square, Tower II, Winbond Memory Lab.  
123 Hoi Bun Rd., Kwun Tong,  
No. 4, Creation Rd. III,  
Science-Based Industrial Park,  
Hsinchu, Taiwan  
TEL: 886-3-5770066  
FAX: 886-3-5796096  
Winbond Microelectronics Corp.  
Kowloon, Hong Kong  
TEL: 852-27513100  
FAX: 852-27552064  
Winbond Systems Lab.  
2727 N. First Street, San Jose,  
CA 95134, U.S.A.  
http://www.winbond.com.tw/  
TEL: 408-9436666  
FAX: 408-5441798  
Voice & Fax-on-demand: 886-2-27197006  
Taipei Office  
11F, No. 115, Sec. 3, Min-Sheng East Rd.,  
Taipei, Taiwan  
TEL: 886-2-27190505  
FAX: 886-2-27197502  
Note: All data and specifications are subject to change without notice.  
Publication Release Date: January 2000  
Revision A1  
- 11 -  

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