MMST4001 [WINNERJOIN]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | MMST4001 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MMST4401
SOT-323
1. BASE
MMST4401 TRANSISTOR (NPN)
FEATURES
2. EMITTER
Power dissipation
3. COLLECTOR
PCM:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
ICM:
0.6
60
A
Collector-base voltage
V(BR)CBO
:
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
V(BR)CBO
Ic=100µA , IE=0
60
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CEO
V(BR)EBO
ICBO
IC= 1mA , IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VCE=35V, IB=0
VEB=5V, IC=0
40
6
V
V
0.1
0.1
0.1
300
µA
µA
µA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE(1)
V
CE=1V, IC= 150mA
CE=2V, IC= 500mA
100
40
DC current gain
hFE(2)
V
VCE(sat)
VBE(sat)
IC=150 mA, IB=15mA
IC= 150 mA, IB=15mA
0.4
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.95
VCE= 10V, IC= 20mA
f = 100MHz
250
MHz
pF
Transition frequency
Output Capacitance
f T
VCB=10V, IE= 0
f=1MHz
6.5
Cob
15
20
nS
nS
Delay time
Rise time
td
tr
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
WEJ ELECTRONIC CO.,LTD
225
nS
Storage time
tS
VCC=30V, IC=150mA
30
nS
Fall time
tf
IB1= IB2= 15mA
Marking: K3X
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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