ESD040215P080 [YINT]
Ultra Low Capacitance ESD Protection;
| 型号： | ESD040215P080 |
| 厂家： | 
Yint |
| 描述： | Ultra Low Capacitance ESD Protection |
| 文件： | 总4页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD Protection Diode
ESD0402**P***
Trustworthy electronic circuit protection expert
Ultra Low Capacitance ESD Protection -ESD0402**P***
Description
The ESD0402**P*** in a 0402 package and will protect one
bidirectional line. These devices are designed to portable applications such as
cell phones, notebook computers, and PDA’s. They offer superior electrical
characteristics ultra low capacitance The ESD0402**P** are designed to
protect sensitive semiconductor components from damage or upset due to
electrostatic discharge (ESD),and other voltage induced transient events.
Feature
Schematic & PIN Configuration
Case : 0402 package
Ultra low capacitance
Surface Mount Devices
Compatible with IEC 61000-4-2(ESD) :Air 15KV , Contact 8KV
Compatible with IEC 61000-4-4(EFT) :40A ,5/50 nS
Applications
USB3.0/USB2.0
Smart Phones
External Storage
High speed data transmission line
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
VESD
VESD
TL
>8
KV
KV
>15
Lead Soldering Temperature
Operating Temperature
Storage Temperature Range
260 (10 sec)
-40 to 85
-40 to 85
°C
°C
°C
TJ
TSTG
www.yint.com.cn
Rev:19.3
1
ESD Protection Diode
ESD0402**P***
Trustworthy electronic circuit protection expert
Electrical Characteristics (T =25°C)
ESD040205P015
Parameter
Symbol
Conditions
Min.
Min.
Min.
Typ.
Max.
Units
Reverse Stand-off
VRWM
Voltage
5.0
V
V
Trigger voltage(VT)
VT
IR
300
Reverse Leakage
Current
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
30
V
VR=0V, f = 1MHz
Junction Capacitance
0.15
pF
ESD040208P030
Parameter
Symbol
Conditions
Typ.
Max.
Units
Reverse Stand-off
Voltage
VRWM
8.0
V
V
Trigger voltage(VT)
VT
300
Reverse Leakage
Current
IR
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
45
V
VR=0V, f = 1MHz
Junction Capacitance
0.30
pF
ESD040212P060
Parameter
Symbol
Conditions
Typ.
Max.
Units
Reverse Stand-off
Voltage
VRWM
12
V
V
Trigger voltage(VT)
VT
300
Reverse Leakage
Current
IR
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
50
V
VR=0V, f = 1MHz
Junction Capacitance
0.60
pF
www.yint.com.cn
Rev:19.3
2
ESD Protection Diode
ESD0402**P***
Trustworthy electronic circuit protection expert
ESD040215P080
Parameter
Symbol
Conditions
Min.
Min.
Min.
Typ.
Max.
Units
Reverse Stand-off
Voltage
VRWM
15
V
V
Trigger voltage(VT)
VT
300
Reverse Leakage
Current
IR
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
60
V
VR=0V, f = 1MHz
Junction Capacitance
0.80
pF
ESD040218P080
Parameter
Symbol
Conditions
Typ.
Max.
Units
Reverse Stand-off
Voltage
VRWM
18
V
V
Trigger voltage(VT)
VT
300
Reverse Leakage
Current
IR
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
65
V
VR=0V, f = 1MHz
Junction Capacitance
0.80
pF
ESD040224P080
Parameter
Symbol
Conditions
Typ.
Max.
Units
Reverse Stand-off
Voltage
VRWM
24
V
V
Trigger voltage(VT)
VT
300
Reverse Leakage
Current
IR
VR
=
VRWM
1
μA
VC
CJ
IPP=1A,
tP = 8/20μs
Clamping Voltage
80
V
VR=0V, f = 1MHz
Junction Capacitance
0.80
pF
www.yint.com.cn
Rev:19.3
3
ESD Protection Diode
ESD0402**P***
Trustworthy electronic circuit protection expert
Rating & Characteristic Curves
Figure 1- Insertion Loss I/O to GND
Figure 2-
Pulse Waveform
PACKAGE OUTLINE DIMENSIONS
DIMENSION(mm)
CODE
L
W
T
L1
0.2±0.15/-0.1
0402
1.0±0.05
0.5±0.05
0.5±0.05
Disclaimer
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device
performance may vary over time.
Users should verify actual device performance in their specific applications.
www.yint.com.cn
Rev:19.3
4
相关型号：
©2020 ICPDF网 联系我们和版权申明