BFN16TA [ZETEX]
Small Signal Bipolar Transistor, 0.2A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BFN16TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon 晶体 晶体管 高压 局域网 |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BFN16
ISSUE 3 - OCTOBER 1995
✪
C
COMPLEMENTARY TYPE -
PARTMARKING DETAILS -
BFN17
DD
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Co lle cto r-Ba se Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
250
V
V
250
5
V
Pe ak Pu ls e Cu rre n t
500
m A
m A
m A
W
Co n tin u o u s Co lle cto r Cu rre n t
Bas e Cu rren t
IC
200
IB
100
1
Po w er Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
Tj:Ts tg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
am b
PARAMETER
S YMBOL MIN.
MAX.
UNIT
V
CONDITIONS .
Co lle cto r-Ba se
Bre a kd o w n Vo ltag e
V(BR)CBO
250
250
5
IC=100µA
Co lle cto r-Em itte r
Bre a kd o w n Vo ltag e
V(BR)CEO
V
V
IC=1m A
Em itte r-Ba s e Bre a kd o w n V(BR)EBO
Vo lta g e
IE=100µA
VCB=250V
Co lle cto r Cu t-Off Cu rre n t ICBO
100
20
n A
µA
VCB=250V, Ta m b=150 °C
Em itte r Cu t-Off Cu rren t
IEBO
100
0.4
n A
V
VEB=3V
Co lle cto r-Em itte r
S atu ra tio n Vo lta g e
VCE(s a t)
IC=20m A, IB=2m A
Bas e -Em itte r S atu ra tio n
Vo lta g e
VBE(s a t)
hFE
0.9
V
IC=20m A, IB=2m A
S ta tic Fo rw a rd Cu rren t
Tra n s fe r Ra tio
25
40
40
IC=1m A,VCE=10V*
IC=10m A, VCE=10V
IC=30m A, VCE=10V
Tra n s itio n Fre q u e n cy
Ou tp u t Ca p a cita n ce
fT
Typ .70
MHz
p F
IC=20m A, VCE=10V*
f=20MHz
Co b o
Typ .1.5
VCB=30V,f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet
3 - 42
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