BST51TA [ZETEX]
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN;
| 型号： | BST51TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN 开关 晶体管 |
| 文件： | 总1页 (文件大小：12K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
BST51
ISSUE 3 – J ANUARY 1996
FEATURES
*
*
Fast Switching
High hFE
C
PARTMAKING DETAIL —
AS2
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
80
V
V
Collector-Em itter Voltage
Em itter-Base Voltage
60
10
V
Pea Pulse Current
1.5
A
Continuous Collector Current
Base Current
IC
500
m A
m A
W
IB
100
1
Power Dissipation at Tam b=25°C
Operating and Storage Tem perature Range
Ptot
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
80
60
10
IC=10µA, IE=0
Collector-Em itter
Breakdown Voltage
V
V
IC=10m A, IB=0*
Em itter-Base
IE=10µA, IC=0
Breakdown Voltage
Em itter Cut-Off Current
IEBO
ICES
10
10
VEB=8V, IE=0
µA
µA
Collector-Em itter
Cut-Off Current
VCE=60V, IC=0
Collector-Em itter
Saturation Voltage
VCE(sat)
1.3
1.3
V
V
IC=500m A, IB=0.5m A
IC=500m A, IB=0.5m A
Tj=150°C
Base-Em itter
Saturation Voltage
VBE(sat)
hFE
1.9
V
IC=500m A, IB=0.5m A
Static Forward Current
Transfer Ratio
1K
2K
IC=150m A, VCE=10V*
IC=-500m A, VCE=-10V*
Turn On Tim e
Turn Off Tim e
ton
400 Typical
1.5K Typical
ns
ns
IC=500m A
IBon=IBoff=0.5m A
toff
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice param eter data is available upon request for this device
For typical graphs see FMMT38A datasheet
3 - 79
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