FMMT5089TA [ZETEX]
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | FMMT5089TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon 晶体 小信号双极晶体管 光电二极管 局域网 |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
FMMT5088
FMMT5089
SMALL SIGNAL TRANSISTORS
ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL
FMMT5088 - 1Q
FMMT5089 - 1R
E
C
COMPLEMENTARY TYPES FMMT5088 - FMMT5087
FMMT5089 - None Available
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMT5088 FMMT5089
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
35
30
30
25
V
4.5
50
4.5
50
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
mA
mW
°C
Ptot
330
330
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMT5088
FMMT5089
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
ICBO
35
30
25
30
V
V
IC=1mA, IB=0
Collector-Emitter
Breakdown Voltage
IC=100µA,IE=0*
Collector- Base
Cut-Off Current
50
50
0.5
nA
nA
VCB=20V, IE=0
VCB=15V, IE=0
50
Emitter-Base Current IEBO
nA
nA
VEB(off)=3V, IC=0
VEB(off)=4.5V, IC=0
100
0.5
Emitter Saturation
Voltages
VCE(sat)
V
V
IC=10mA, IB=1mA
VBE(sat)
hFE
0.8
0.8
Static Forward
Current Transfer
Ratio
300
350
300
900
400
450
400
1200
IC=100µA, VCE=5V
IC=1mA, VCE=5V
IC=10mA, VCE=5V
Transition
Frequency
fT
50
50
MHz
IC=500µA, VCE=5V
f=20MHz
Output Capacitance
Cobo
Cebo
4
4
pF
pF
VCB=5V, f=1MHz, IE=0
Emitter-base
Capacitance
10
10
VBE=0.5V, f=1MHz,
IC=0
Noise Figure
N
3
2
dB
IC=200mA, VCE=5V,
Rg=10KΩ, f=10Hz to
15KHz
Small Signal Current hfe
Transfer Ratio
350
1400 450
1800
IC=1mA, VCE=5V
f=1KHz ++
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ++ Periodic Sample test Only
Spice parameter data is available upon request for this device
Page Number
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