FMMT624 [ZETEX]
NPN SILICON POWER (SWITCHING) TRANSISTORS; NPN硅功率（开关）晶体管
| 型号： | FMMT624 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON POWER (SWITCHING) TRANSISTORS |
| 文件： | 总4页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SuperSOT
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*
*
*
*
*
IC CONT 3A
E
12A Peak Pulse Current
C
Excellent HFE Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance; RCE(sat)
B
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
PARTMARKING
RCE(sat)
50mΩ at 3A
50mΩ at 2A
75mΩ at 2A
-
617
618
619
624
625
-
ABSOLUTE MAXIMUM RATINGS.
FMMT FMMT FMMT FMMT FMMT
PARAMETER
SYMBOL
617
15
15
5
618
20
20
5
619
624
125
125
5
625
150
150
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
VCBO
VCEO
VEBO
ICM
IC
50
50
V
5
V
12
3
6
6
2
3
3
A
2.5
1
1
A
IB
500
mA
mW
°C
Power Dissipation at Tamb=25°C*
Ptot
625
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
*
Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT624
FMMT625
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
FMMT624
FMMT625
PARAMETER
SYMBOL
V
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
125
125
5
250
160
8.3
150
150
5
300
175
8.3
V
V
V
I =100µA
I =10mA*
I =100µA
Collector-Emitter
Breakdown Voltage
V
V
I
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
100
100
50
nA
nA
V
V
=100V
=130V
100
100
Emitter Cut-Off
Current
I
nA
V
=4V
Collector Emitter
Cut-Off Current
I
nA
nA
V
V
=100V
=130V
100
Collector-Emitter
Saturation Voltage
V
26
26
110
50
200
mV
mV
mV
mV
mV
I =0.1A, I =10mA*
I =0.1A, I =1mA*
I =0.5A, I =50mA*
I =0.5A, I =10mA*
I =1A, I =50mA*
70
150
220
250
160
165
180
300
Base-Emitter
Saturation Voltage
V
V
h
0.85 1.0
0.85 1.0
V
I =1A, I =50mA*
Base-Emitter
Turn-On Voltage
0.7
1.0
0.74 1.0
V
I =1A, V =10V*
Static Forward
Current Transfer
Ratio
200
300
100
400
450
140
18
200
300
30
400
450
45
I =10mA, V =10V*
I =0.2A, V =10V*
I =1A, V =10V*
I =3A, V =10V*
15
Transition
Frequency
f
100
155
100
135
MHz I =50mA, V =10V
f=100MHz
Output Capacitance
Turn-On Time
C
t
15
6
10
pF
ns
ns
V
=10V, f=1MHz
7
160
1500
V
I
=50V, I =0.5A
=-I =50mA
60
Turn-Off Time
t
1300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 155
FMMT624
TYPICAL CHARACTERISTICS
0.5
0.4
0.5
0.4
0.3
0.2
0.3
0.2
0.1
0.0
0.1
0.0
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
VCE(SAT) vs IC
VCE(SAT) vs IC
1.0
1.2
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
450
225
0.2
0.0
0.0
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
hFE vs IC
VBE(SAT) vs IC
SINGLE PULSE TEST
T
= 25 deg C
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.1
µ
0.01
1mA
10mA
100mA
1A
10A
1.0
10
100
1000
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
Safe Operating Area
3 - 156
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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