UZVN3310F [ZETEX]
Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | UZVN3310F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN3310F
ISSUE 3 – OCTOBER 1995
✪
FEATURES
*
*
100 Volt VDS
RDS(on)= 10Ω
S
D
G
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP3310F
MF
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
100
100
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
A
IDM
2
Gate-Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.4
20
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
nA
V
GS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
1
50
V
V
DS=100V, VGS=0
DS=80V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
500
100
mA
VDS=25V, VGS=10V
VGS=10V, ID=500mA
Static Drain-Source On-State
Resistance (1)
RDS(on)
10
Ω
Forward Transconductance
(1)(2)
gfs
mS
VDS=25V, ID=500mA
Input Capacitance (2)
Ciss
40
15
pF
pF
Common Source
Output Capacitance (2)
Coss
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
3 typ
5 typ
4 typ
5 typ
5
7
6
7
ns
ns
ns
ns
V
DD ≈25V, ID=500mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 396
ZVN3310F
TYPICAL CHARACTERISTICS
160
1.6
1.4
VDS= 25V
VGS=
10V
9V
8V
7V
6V
1.2
120
80
1.0
0.8
0.6
5V
0.4
0.2
0
40
0
4V
3V
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
DS
Voltage (Volts)
V - Drain Source
ID- Drain Current (Amps)
Saturation Characteristics
Transconductance v drain current
VDS=
50V
20V
80V
16
14
50
40
30
ID=0.6A
12
10
8
Ciss
20
10
0
6
4
2
0
Coss
Crss
0
10
20
40
50
30
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
ID=-0.5A
10
ID=
1A
0.5A
0.2A
1.0
0.8
0.6
0.4
1
-80 -60 -40 -20
0
20 40 60 80 100 120 140 160
T-Temperature (C°)
1
10
20
VGS-Gate Source Voltage (Volts)
Normalised RDS(on) and VGS(th) vs Temperature
On-resistance vs gate-source voltage
3 - 397
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