UZXT12P12DXTA [ZETEX]

Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, MO-187AA, MO-187, MSOP-8;
UZXT12P12DXTA
型号: UZXT12P12DXTA
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, MO-187AA, MO-187, MSOP-8

文件: 总6页 (文件大小:257K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZXT12P12DX  
SuperSOT4™  
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-12V; RSAT = 47m ; IC= -3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
MSOP8  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 12A  
C1  
C2  
IC=3A Continuous Collector Current  
MSOP8 package  
B1  
B2  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
E1  
E2  
Motor control  
E1  
B1  
E2  
C1  
C1  
C2  
C2  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
B2  
12mm embossed  
12mm embossed  
ZXT12P12DXTA  
ZXT12P12DXTC  
7
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
T12P12DX  
ISSUE 1 - MARCH 2000  
1
ZXT12P12DX  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
-20  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
-12  
V
-7.5  
-15  
V
I
I
I
A
CM  
Continuous Collector Current  
Base Current  
-3  
A
C
B
-500  
mA  
Power Dissipation at TA=25°C (a)(d)  
Linear Derating Factor  
P
P
P
0.87  
6.9  
W
D
D
D
mW/°C  
Power Dissipation at TA=25°C (a)(e)  
Linear Derating Factor  
1.04  
8.3  
W
mW/°C  
Power Dissipation at TA=25°C (b)(d)  
Linear Derating Factor  
1.25  
10  
W
mW/°C  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(d)  
Junction to Ambient (b)(d)  
Junction to Ambient (a)(e)  
R
R
R
143  
100  
120  
θJA  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
(d) For device with one active die.  
(e) For device with two active die running at equal power.  
ISSUE 1 - MARCH 2000  
2
ZXT12P12DX  
CHARACTERISTICS  
ISSUE 1 - MARCH 2000  
3
ZXT12P12DX  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
-20  
-12  
-7.5  
-35  
V
I =-100A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
-28  
V
I =-10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-8.5  
V
I =-100A  
E
(BR)EBO  
CBO  
I
I
I
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
=-16V  
=-6V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=-16V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
-8  
-65  
-195  
-140  
-11  
-85  
-270  
-190  
mV  
mV  
mV  
mV  
I =-0.1A, I =-10mA*  
C B  
CE(sat)  
I =-1A, I =20mA*  
C
B
I =-3A, I =-30mA*  
C B  
I =-3A, I =-150mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
-0.88 -0.95  
-0.84 -0.90  
V
V
I =-3A, I =-30mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =-3A, V =-2V*  
C
CE  
Static Forward Current Transfer  
Ratio  
300  
300  
200  
20  
450  
I =-10mA, V =-2V*  
C CE  
450  
300  
40  
900  
I =-1A, V =-2V*  
C CE  
I =-3A, V =-2V*  
C
CE  
I =-12A, V =-2V*  
C
CE  
Transition Frequency  
f
85  
MHz  
I =-50mA, V =-10V  
T
C
CE  
f=-50MHz  
Output Capacitance  
Turn-On Time  
C
75  
pF  
ns  
ns  
V
=-10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
100  
V
=-10V, I =-3A  
CC C  
=I =-60mA  
I
B1 B2  
Turn-Off Time  
1710  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ISSUE 1 - MARCH 2000  
4
ZXT12P12DX  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MARCH 2000  
5
ZXT12P12DX  
PAD LAYOUT DETAILS  
PACKAGE DIMENSIONS  
D
8
7
2
6
3
5
4
1
e X 6  
θ°  
L
B
C
Conforms to JEDEC MO-187 Iss A  
DIM  
Millimetres  
Inches  
MIN  
MIN  
MAX  
MAX  
0.043  
0.006  
0.016  
0.009  
0.122  
BSC  
A
A1  
B
1.10  
0.15  
0.40  
0.23  
3.10  
BSC  
3.10  
BSC  
0.70  
6°  
0.05  
0.25  
0.13  
2.90  
0.65  
2.90  
4.90  
0.40  
0°  
0.002  
0.010  
0.005  
0.114  
0.0256  
0.114  
0.193  
0.016  
0°  
C
D
e
E
0.122  
BSC  
H
L
0.028  
6°  
q°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - MARCH 2000  
6

相关型号:

UZXT12P12DXTC

Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, MO-187AA, MO-187, MSOP-8
ZETEX

UZXT12P20DXTA

Small Signal Bipolar Transistor, 2.5A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, MO-187AA, MO-187, MSOP-8
DIODES

UZXT13N15DE6TA

Small Signal Bipolar Transistor, 5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 6 PIN
ZETEX

UZXT13N15DE6TC

Small Signal Bipolar Transistor, 5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 6 PIN
ZETEX

UZXT13N20DE6TA

Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN
DIODES

UZXT13N20DE6TC

Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN
DIODES

UZXT13N50DE6TA

Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 6 PIN
DIODES

UZXT13N50DE6TC

Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 6 PIN
DIODES

UZXT13P40DE6TA

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN
DIODES

UZXT13P40DE6TC

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN
DIODES

UZXT1M322TA

Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN
DIODES

UZXT1M322TC

Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN
DIODES