UZXT13P40DE6TA [DIODES]

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN;


型号：	UZXT13P40DE6TA
厂家：	DIODES INCORPORATED
描述：	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin, SOT-23, 6 PIN 开关光电二极管晶体管
文件：	总6页 (文件大小：410K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXT13P40DE6

SuperSOT4™

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

V_CEO=-40V; R_SAT= 58m ; I_C= -3A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

SOT23-6

FEATURES

•

Extremely Low Equivalent On Resistance

Extremely Low Saturation Voltage

h_FEcharacterised up to 5A

I_C=3A Continuous Collector Current

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

Power Management Functions

Power switches

Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXT13P40DE6TA

ZXT13P40DE6TC

8mm embossed

3000 units

10000 units

Top View

DEVICE MARKING

P40D

ISSUE 2 - JANUARY 2000

ZXT13P40DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

CBO

CEO

EBO

-40

-7.5

-10

Continuous Collector Current

Base Current

-3

-500

Power Dissipation at TA=25°C (a)

Linear Derating Factor

1.1

8.8

mW/°C

Power Dissipation at TA=25°C (b)

Linear Derating Factor

1.7

13.6

mW/°C

Operating and Storage Temperature Range

T :T

-55 to +150

°C

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

°C/W

Junction to Ambient (a)

Junction to Ambient (b)

113

θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

ISSUE 2 - JANUARY 2000

ZXT13P40DE6

TYPICAL CHARACTERISTICS

1.2

1.0

0.8

0.6

0.4

100ms

10ms

100m

1ms

100µs

Single Pulse Tamb=25°C

0.2

0.0

10m

100m

100 120 140 160

V_CECollector-Emitter Voltage (V)

Temperature (°C)

Safe Operating Area

Derating Curve

120

100

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

100µ

10m 100m

100

Pulse Width (s)

Transient Thermal Impedance

ISSUE 2 - JANUARY 2000

ZXT13P40DE6

ELECTRICAL CHARACTERISTICS (at T_amb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

-50

-40

-7.5

-80

I =-100␮A

(BR)CBO

(BR)CEO

Collector-Emitter Breakdown

Voltage

-70

I =-10mA*

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

-8.5

I =-100␮A

(BR)EBO

CBO

-100

=-40V

=-6V

Emitter Cut-Off Current

EBO

Collector Emitter Cut-Off Current

=-40V

CES

Collector-Emitter Saturation

Voltage

-16

-25

-200

-190

-240

I =-0.1A, I =-10mA*

C B

CE(sat)

-110

-145

-175

I =-1A, I =-20mA*

C B

I =-2A, I =-100mA*

I =-3A, I =-300mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

-1.1

-0.9

I =-3A, I =-300mA*

C B

BE(sat)

BE(on)

I =-3A, V =-2V*

Static Forward Current Transfer

Ratio

300

100

500

I =-10mA, V =-2V*

C CE

450

250

900

I =-1A, V =-2V*

C CE

I =-3A, V =-2V*

I =-5A, V =-2V*

Transition Frequency

115

MHz

I =-50mA, V =-10V

f=50MHz

Output Capacitance

Turn-On Time

185

400

=-10V, f=1MHz

obo

(on)

(off)

=-10V, I =-1A

CC C

=I =-20mA

B1 B2

Turn-Off Time

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 2 - JANUARY 2000

ZXT13P40DE6

TYPICAL CHARACTERISTICS

0.25

I_C/I_B=50

Tamb=25°C

I_C/I_B=100

0.20

0.15

0.10

100m

10m

I_C/I_B=50

100°C

25°C

I_C/I_B=10

0.05

-55°C

0.00

10m

100m

10m

100m

I_CCollector Current (A)

V_CE(SAT)v I_C

V_CE=2V

I_C/I_B=50

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.0

0.8

0.6

0.4

100°C

-55°C

25°C

-55°C

100°C

10m

100m

10m

100m

I_CCollector Current (A)

V_BE(SAT)v I_C

h_FEv I_C

V_CE=2V

-55°C

1.0

0.8

0.6

0.4

25°C

100°C

10m

100m

I_CCollector Current (A)

V_BE(ON)v I_C

ISSUE 2 - JANUARY 2000

ZXT13P40DE6

PACKAGE DIMENSIONS

PAD LAYOUT DETAILS

DATUM A

DIM Millimetres

Inches

Min

Max

1.45

0.15

1.30

0.50

0.20

3.00

1.75

0.60

Max

0.90

0.35

0.057

0.006

0.051

0.019

0.008

0.118

0.069

0.002

0.00

0.90

0.035

0.014

0.0035

0.110

0.102

0.059

0.004

0.35

0.09

2.80

2.60

1.50

0.10

0.95 REF

1.90 REF

0°

0.037 REF

0.074 REF

0°

10°

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

3510 Metroplaza, Tower 2

Hing Fong Road,

Kwai Fong, Hong Kong

Telephone:(852) 26100 611

Fax: (852) 24250 494

These are supported by

Streitfeldstraße 19

D-81673 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

47 Mall Drive, Unit 4

Commack NY 11725

USA

Telephone: (631) 543-7100

Fax: (631) 864-7630

agents and distributors in

major countries world-wide

Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for

any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves

the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 2 - JANUARY 2000

UZXT13P40DE6TA [DIODES]

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