UZXT1M322TA [DIODES]

Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN;


型号：	UZXT1M322TA
厂家：	DIODES INCORPORATED
描述：	Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN 开关晶体管
文件：	总6页 (文件大小：182K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXT1M322

MPPS™ Miniature Package Power Solutions

12V PNP LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

CEO

= -12V; R

= 60m ; I = -4A

SAT C

DESCRIPTION

Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,

this new 4^thgeneration low saturation transistor offers extremely low on state

losses making it ideal for use in DC-DC circuits and various driving and power

management functions.

Additionally users will also gain several other key benefits:

Performance capability equivalent to much larger packages

2mm x 2mm MLP

(single die)

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (nom 0.9mm)

FEATURES

•

Low Equivalent On Resistance

Extremely Low Saturation Voltage (-140mV@ -1A)

specified up to -10A

I = -4A Continuous Collector Current

2mm x 2mm MLP

APPLICATIONS

•

DC - DC Converters (FET Driving)

Charging Circuits

PINOUT

Power switches

Motor control

ORDERING INFORMATION

DEVICE

REEL

TAPE

WIDTH

QUANTITY

PER REEL

ZXT1M322TA

ZXT1M322TC

؅؅

8mm

3000

10000

2mm x 2mm Single MLP

underside view

DEVICE MARKING

ISSUE 2 - JUNE 2002

ZXT1M322

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

CBO

CEO

EBO

-12

-7.5

-12

Continuous Collector Current (a)

Base Current

-4

-1000

Power Dissipation at TA=25°C (a)

Linear Derating Factor

1.5

mW/°C

Power Dissipation at TA=25°C (b)

Linear Derating Factor

2.45

19.6

mW/°C

Power Dissipation at TA=25°C (d)

Linear Derating Factor

mW/°C

Power Dissipation at TA=25°C (e)

Linear Derating Factor

mW/°C

Operating and Storage Temperature Range

T :T

-55 to +150

°C

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

°C/W

Junction to Ambient (a)

Junction to Ambient (b)

Junction to Ambient (d)

Junction to Ambient (e)

NOTES

θJA

125

(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.

(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secs with all exposed pads

attached.

(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.

(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.

(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the

package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is

Rth=300°C/W giving a power rating of Ptot=420mW.

ISSUE 2 - JUNE 2002

ZXT1M322

CHARACTERISTICS

3.5

3.0

CE(SAT)

_amb=25°C

Limited

2.5

2.0

1.5

1.0

0.5

0.0

2oz Cu

Note: e

100ms

10ms

0.1

1oz Cu

Note: a

1ms

100us

Single Pulse, T_amb=25°C

0.01

0.1

100 125 150

V Collector-Emitter Voltage (V)

Temperature (°C)

Safe Operating Area

Derating Curve

225

200

175

150

125

100

D=0.5

1oz copper

Single Pulse

D=0.05

D=0.1

D=0.2

2oz copper

100µ 1m 10m 100m

10 100 1k

0.1

100

Pulse Width (s)

BoardCuArea(sqcm)

Transient Thermal Impedance

Thermal Resistance v Board Area

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

_amb=25°C

_jmax=150°C

Continuous

2oz copper

1oz copper

0.1

100

BoardCuArea(sqcm)

Power Dissipation v Board Area

ISSUE 2 - JUNE 2002

ZXT1M322

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

MIN.

-20

TYP.

-35

MAX. UNIT

CONDITIONS.

I =-100␮A

Collector-Base Breakdown

Voltage

(BR)CBO

Collector-Emitter Breakdown

Voltage

-12

-25

I =-10mA*

(BR)CEO

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

-7.5

-8.5

I =-100␮A

(BR)EBO

CBO

-25

-17

=-16V

=-6V

Emitter Cut-Off Current

EBO

Collector Emitter Cut-Off Current

=-10V

CES

Collector-Emitter Saturation

Voltage

-10

I =-0.1A, I =-10mA*

C B

CE(sat)

-100

-195

-240

-140 mV

-150 mV

-300 mV

I =-1A, I =-10mA*

C B

I =-1.5A, I =-50mA*

I =-3A, I =-50mA*

I =-4A, I =-150mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

-0.97

-0.87

-1.05

-0.95

I =-4A, I =-150mA*

C B

BE(sat)

BE(on)

I =-4A, V =-2V*

Static Forward Current Transfer

Ratio

300

180

475

450

275

100

I =-10mA, V =-2V*

C CE

I =-0.1A, V =-2V*

I =-2.5A, V =-2V*

I =-8A, V =-2V*

I =-10A, V =-2V*

C CE

Transition Frequency

100

110

MHz

I =-50mA, V =-10V

f=100MHz

Output Capacitance

Turn-On Time

=-10V, f=1MHz

obo

(on)

(off)

=-6V, I =-2A

=I =-50mA

B1 B2

Turn-Off Time

130

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 2 - JUNE 2002

ZXT1M322

CHARACTERISTICS

0.25

0.20

0.15

0.10

0.05

0.00

I_C/I_B=50

Tamb=25°C

100m

10m

100°C

I_C/I_B=100

25°C

I_C/I_B=50

-55°C

I_C/I_B=10

I_C^10mCollector Current ¹(A)

100m

V_CE(SAT)vI_C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

630

540

450

360

270

180

V =2V

I_C/I_B=50

1.0

100°C

0.8

0.6

0.4

-55°C

25°C

-55°C

100°C

100m

I_CCollector Current (A) ¹⁰

I_C^10mCollector Current ¹(A)

10m

100m

h vI_C

V_BE(SAT)vI_C

V =2V

1.0

0.8

0.6

0.4

0.2

-55°C

25°C

100°C

10m

100m

I_CCollector Current (A)

V_BE(ON)vI_C

ISSUE 2 - JUNE 2002

ZXT1M322

MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)

CONTROLLING DIMENSIONS IN MILLIMETRES

APPROX. CONVERTED DIMENSIONS IN INCHES

PACKAGE DIMENSIONS

MILLIMETRES

INCHES

MILLIMETRES

MIN. MAX.

0.65 REF

2.00 BSC

INCHES

MIN. MAX.

DIM

MIN.

0.80

0.00

0.65

0.15

0.18

0.17

MAX.

1.00

0.05

0.75

0.25

0.28

0.30

MIN.

MAX.

0.0393

0.002

0.0315

0.00

0.0255 REF

0.0787 BSC

0.0255

0.0059

0.0070

0.0066

0.0295

0.0098

0.0110

0.0118

0.79

0.99

0.68

0.45

0.031

0.039

0.0267

0.0177

0.48

0.20

0.0188

0.0078

0.125 MAX.

0.075 BSC

0Њ 12Њ

0.005 REF

0.0029 BSC

0Њ 12Њ

2.00 BSC

0.0787 BSC

1.22

0.56

1.42

0.76

0.0480

0.0220

0.0559

0.0299

⍜

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ISSUE 2 - JUNE 2002

UZXT1M322TA [DIODES]

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