ZDT751TC [ZETEX]
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN;
| 型号： | ZDT751TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN 晶体 晶体管 |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT751
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – T751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
-60
V
-5
V
Peak Pulse Current
-6
-2
A
Continuous Collector Current
IC
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
2.25
2.75
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
ZDT751
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-100µA, IE=0
Collector-Emitter
V(BR)CEO -60
V(BR)EBO -5
ICBO
V
V
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-60V
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
-0.1
-10
µA
µA
V
CB=-60V,Tamb=100°C
Emitter Cutoff Current IEBO
-0.1
VEB=-4V, IE=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.28
-0.3
-0.5
V
V
IC=1A, IB=-100mA*
IC=2A, IB=-200mA*
Base-Emitter
VBE(sat)
-0.9
-0.8
-1.25
-1
V
V
IC=1A, IB=-100mA*
IC=-1A, VCE=-2V*
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current hFE
Transfer Ratio
70
200
200
170
80
IC=-50mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
100
80
300
40
IC=-2A, VCE=-2V*
Transition Frequency
fT
100
140
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
30
pF
ns
ns
VCB=-10V f=1MHz
40
IC=-500mA, VCC=-10V
I
B1=IB2=-50mA
toff
450
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT751
TYPICAL CHARACTERISTICS
0.6
0.5
td
tr
tf
IB1=IB2=IC/10
ts
ns
ns
140
120
100
80
700
600
500
0.4
IC/IB=10
ts
td
0.3
0.2
0.1
tf
tr
400
300
200
100
60
40
20
0
0
0
0.0001
0.001
0.01
0.1
1
10
0.1
1
C
I
Collector Current (Amps)
-
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
1.4
225
1.2
1.0
175
VCE=2V
IC/IB=10
125
75
0
0.8
0.6
0.01
0.1
1
10
0.001 0.01
0.0001
0.1
1
10
C
I
-
Collector Current (Amps)
C
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.2
1.0
VCE=2V
0.8
0.6
0.4
0.001 0.01
0.0001
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
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