ZXM66P03N8(1) [ZETEX]

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ZXM66P03N8(1)
型号: ZXM66P03N8(1)
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

文件: 总4页 (文件大小:52K)
中文:  中文翻译
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ZXM66P03N8  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=-30V; RDS(ON)=0.025  
D=-7.9A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
S O8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Disconnect switches  
Motor control  
D
S
S
S
ORDERING INFORMATION  
D
D
DEVICE  
REEL S IZE  
TAPE WIDTH  
QUANTITY  
PER REEL  
ZXM66P03N8TA  
ZXM66P03N8TC  
7”  
12m m  
12m m  
500 u n its  
2500 u n its  
Top View  
13”  
DEVICE MARKING  
ZXM6  
6N03  
PROVISIONAL ISSUE A - MAY 2001  
ZXM66P03N8  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS S  
VGS  
LIMIT  
-30  
UNIT  
V
Dra in -S o u rce Vo lta g e  
Ga te - S o u rce Vo lta g e  
V
±20  
Co n tin u o u s Dra in Cu rre n t VGS =-10V; TA=25°C(b )  
ID  
-7.9  
-6.3  
A
VGS =-10V; TA=70°C(b )  
VGS =-10V; TA=25°C(a )  
-6.25  
Pu ls e d Dra in Cu rre n t (c)  
IDM  
IS  
-28  
-4.1  
-28  
A
A
A
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )(b )  
Pulsed Source Current (Body Diode)(c)  
IS M  
PD  
Po w e r Dis s ip a tio n a t TA=25°C (a )  
Lin e a r De ra tin g Fa cto r  
1.56  
12.5  
W
m W/°C  
Po w e r Dis s ip a tio n a t TA=25°C (b )  
Lin e a r De ra tin g Fa cto r  
PD  
2.5  
20  
W
m W/°C  
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
Tj:Ts tg  
-55 to +150  
°C  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
RθJ A  
VALUE  
80  
UNIT  
°C/W  
°C/W  
J u n ctio n to Am b ie n t (a )  
J u n ctio n to Am b ie n t (b )  
RθJ A  
50  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface m ounted on FR4 PCB m easured at tр10 secs.  
(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.05, pulse width 10s - pulse width lim ited by m axim um  
junction tem perature.  
PROVISIONAL ISSUE A - MAY 2001  
ZXM66P03N8  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
S YMBOL MIN.  
TYP.  
MAX.  
UNI CONDITIONS .  
T
S TATIC  
Dra in -S o u rce Bre a kd o w n Vo lta g e  
Ze ro Ga te Vo lta g e Dra in Cu rre n t  
Ga te -Bo d y Le a ka g e  
V(BR)DS S  
IDS S  
-30  
V
ID=-250µA, VGS =0V  
-1  
VDS =-24V, VGS =0V  
µA  
n A  
V
IGS S  
-100  
VGS =±20V, VDS =0V  
Ga te -S o u rce Th re s h o ld Vo lta g e  
VGS (th )  
RDS (o n )  
-1.0  
I =-250µA, VDS = VGS  
D
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce  
(1)  
0.025  
0.035  
VGS =-10V, ID=-5.6A  
VGS =-4.5V, ID=-2.8A  
Fo rw a rd Tra n s co n d u cta n ce (1)(3)  
DYNAMIC (3)  
g fs  
14.4  
S
VDS =-15V,ID=-5.6A  
In p u t Ca p a cita n ce  
Ou tp u t Ca p a cita n ce  
Re ve rs e Tra n s fe r Ca p a cita n ce  
S WITCHING(2) (3)  
Tu rn -On De la y Tim e  
Ris e Tim e  
Cis s  
Co s s  
Crs s  
1979  
743  
p F  
p F  
p F  
V
DS =-25 V, VGS =0V,  
f=1MHz  
279  
td (o n )  
tr  
td (o ff)  
tf  
7.6  
16.3  
94.6  
39.6  
36  
n s  
n s  
n s  
n s  
VDD =-15V, ID=-5.6A  
RG=6.2, VGS =-10V  
Tu rn -Off De la y Tim e  
Fa ll Tim e  
Ga te Ch a rg e  
Qg  
n C VDS =-15V,VGS =-5V  
ID=-5.6A  
To ta l Ga te Ch a rg e  
Qg  
62.5  
4.9  
n C  
VDS =-15V,VGS =-10V  
Ga te -S o u rce Ch a rg e  
Ga te Dra in Ch a rg e  
Qg s  
Qg d  
n C  
n C  
ID=-5.6A  
19.6  
S OURCE-DRAIN DIODE  
Dio d e Fo rw a rd Vo lta g e (1)  
VS D  
-0.95  
V
Tj=25°C, IS =-5.6A,  
VGS =0V  
Re ve rs e Re co ve ry Tim e (3)  
Re ve rs e Re co ve ry Ch a rg e (3)  
trr  
35  
n s  
Tj=25°C, IF=-5.6A,  
d i/d t= 100A/µs  
Qrr  
39.9  
n C  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
PROVISIONAL ISSUE A - MAY 2001  
ZXM66P03N8  
PACKAGE DIMENSIONS  
DIM  
Millim e tre s  
In ch e s  
Min  
Min  
Ma x  
4.98  
Ma x  
A
B
C
D
E
F
4.80  
0.189  
0.196  
1.27 BS C  
0.53 REF  
0.05 BS C  
0.02 REF  
0.36  
3.81  
1.35  
0.10  
5.80  
0°  
0.46  
0.014  
0.15  
0.05  
0.004  
0.23  
0°  
0.018  
3.99  
1.75  
0.25  
6.20  
8°  
0.157  
0.07  
0.010  
0.24  
8°  
G
J
K
L
0.41  
1.27  
0.016  
0.050  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
Zetex plc 2000  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
PROVISIONAL ISSUE A - MAY 2001  

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