ZXMN3G32DN8 [ZETEX]
30V SO8 dual N-channel enhancement mode MOSFET; SO8 30V双N沟道增强型MOSFET
| 型号： | ZXMN3G32DN8 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V SO8 dual N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V
R
(Ω)
I (A)
(BR)DSS
DS(on)
D
30
0.028 @ V = 10V
7.1
5.6
GS
0.045 @ V = 4.5V
GS
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
D1
D2
S2
•
•
•
Low on-resistance
4.5V gate drive capability
Fast switching bullet
G1
G2
Applications
S1
•
•
•
•
DC-DC Converters
Power management functions
Motor Control
S1
D1
D1
D2
D2
G1
S2
G2
Backlighting
Ordering information
DEVICE
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN3G32DN8TA
7
12
500
Device marking
ZXMN
3G32D
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ZXMN3G32DN8
Absolute maximum ratings
Parameter
Symbol
V
Limit
Unit
Drain source voltage
30
V
DSS
Gate source voltage
V
20
V
GS
(b)
(b)
(a)
I
7.1
5.7
5.5
A
A
A
Continous Drain Current @ V =10; T =25°C
D
GS
A
@ V =10; T =70°C
GS
A
@ V =10; T =25°C
GS
A
(c)
I
33.6
3.1
A
A
A
Pulsed drain current
DM
(b)
I
Continuous source current (body diode)
S
(c)
I
33.6
Pulsed source current (body diode)
SM
(a)(d)
P
1.25
10
W
Power dissipation at T =25°C
D
A
mW/°C
Linear derating factor
(a)(e)
P
1.8
14
W
Power dissipation at T =25°C
D
A
mW/°C
Linear derating factor
(b)(d)
P
2.1
17
W
Power dissipation at T =25°C
D
A
mW/°C
Linear derating factor
Operating and storage temperature range
T , T
-55 to 150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)(d)
R
100
°C/W
Junction to ambient
⍜JA
(a)(e)
R
70
60
51
°C/W
°C/W
°C/W
Junction to ambient
⍜JA
(b)(d)
R
Junction to ambient
⍜JA
(f)
R
Junction to lead
⍜JL
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d)For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
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ZXMN3G32DN8
Thermal characteristics
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ZXMN3G32DN8
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source Breakdown
Voltage
V
30
V
I = 250µA, V =0V
D GS
(BR)DSS
Zero Gate Voltage Drain
Current
I
I
0.5
µA
V
= 30V, V =0V
GS
DSS
DS
Gate-Body Leakage
100
3.0
nA
V
V
= 20V, V =0V
DS
GSS
GS
Gate-Source Threshold
Voltage
V
1.0
I = 250µA, V =V
D DS GS
GS(th)
Static Drain-Source
On-State Resistance
R
0.028
0.045
Ω
Ω
V
V
= 10V, I = 6.0A
DS(on)
GS
GS
D
(*)
= 4.5V, I = 4.9A
D
Forward
Transconductance
g
12
S
V
= 15V, I = 6.0A
D
fs
DS
(*)(†)
(†)
Dynamic
Input Capacitance
Output Capacitance
C
C
C
472
178
65
pF
pF
pF
iss
V
= 15V, V =0V
GS
DS
oss
rss
f=1MHz
Reverse Transfer
Capacitance
(‡)(†)
Switching
Turn-On-Delay Time
Rise Time
t
t
t
t
2.5
3.1
ns
ns
ns
ns
nC
nC
nC
d(on)
V
R
= 15V, I = 1A
D
DD
r
≅ 6.0Ω, V =10V
G
GS
Turn-Off Delay Time
Fall Time
14
d(off)
f
9.7
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Q
Q
Q
10.5
1.86
2.3
V
= 15V, V = 10V
DS GS
g
I = 6A
D
gs
gd
(*)
V
0.68
1.2
V
T =25°C, I = 1.7A,
Diode Forward Voltage
SD
j
S
V
=0V
GS
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
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ZXMN3G32DN8
Typical characteristics
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ZXMN3G32DN8
Test circuits
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ZXMN3G32DN8
Package outline - SO8
DIM
Inches
Min.
Millimeters
DIM
Inches
Millimeters
Min. Max.
1.27 BSC
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
0.050 BSC
0.013
0.008
0°
0.020
0.010
8°
0.33
0.51
0.25
8°
0.19
0°
H
⍜
h
-
E
0.010
-
0.020
-
0.25
-
0.50
-
L
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMN3G32DN8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
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tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
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Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
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Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
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