ZXMN4A06GTC [DIODES]
40V N-CHANNEL ENHANCEMENT MODE MOSFET; 40V N沟道增强型MOSFET
| 型号： | ZXMN4A06GTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN4A06G
40V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= 40V; R
= 0.05 I = 7A
DS(ON) D
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that com bines the benefits of low on-resistance with fast switching speed. This
m akes them ideal for high efficiency, low voltage, power m anagem ent applications.
FEATURES
SOT223
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Audio Output Stages
Relay and Solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN4A06GTA
ZXMN4A06GTC
7”
12m m
12m m
1000 units
4000 units
13”
DEVICE MARKING
•
ZXMN
4A06
Top View
ISSUE 1 - MAY 2002
1
ZXMN4A06G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
VDS S
VGS
LIMIT
40
UNIT
V
Dra in -S o u rce Vo lta g e
Ga te -S o u rce Vo lta g e
20
V
Co n tin u o u s Dra in Cu rre n t VGS =10V; TA=25°C(b )
ID
7.0
5.6
5.0
A
VGS =10V; TA=70°C(b )
GS =10V; TA=25°C(a )
V
Pu ls e d Dra in Cu rre n t (c)
IDM
IS
22
5.4
22
A
A
A
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )(c)
IS M
PD
Po w e r Dis s ip a tio n a t TA=25°C (a )
Lin e a r De ra tin g Fa cto r
2.0
16
W
m W/°C
Po w e r Dis s ip a tio n a t TA=25°C (b )
Lin e a r De ra tin g Fa cto r
PD
3.9
31
W
m W/°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
Tj:Ts tg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
S YMBOL
RθJ A
VALUE
62.5
UNIT
°C/W
°C/W
J u n ctio n to Am b ie n t (a )
J u n ctio n to Am b ie n t (b )
RθJ A
32.2
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
(c) Repetitive rating 25m m x 25m m FRA PCB, D=0.05 pulse width = 10s - pulse width lim ited by m axim um junction tem perature.
ISSUE 1 - MAY 2002
2
ZXMN4A06G
CHARACTERISTICS
RDS(on)
Limited
2.0
1.6
1.2
0.8
0.4
10
1
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
Tamb= 25° C
100µs
10
0.0
1
0
20 40
Temp6e0rat8u0re1(0°0C1)20 140 160
VDS Drain-Source Voltage (V)
Derating Curve
Safe Operating Area
70
60
50
40
30
20
10
0
Tamb= 25° C
Single Pulse
T
amb= 25° C
100
10
1
D= 0.5
Single Pulse
D= 0.2
D= 0.05
D= 0.1
100µ 1m 10m 100m
1
100 1k
Pulse Width (s1)0
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 1 - MAY 2002
3
ZXMN4A06G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V(BR)DS S
IDS S
40
V
ID=250A, VGS =0V
1
A VDS =40V, VGS =0V
IGS S
100
nA
V
VGS =±20V, VDS =0V
Ga te -S o u rce Th re s h o ld Vo lta g e
VGS (th )
RDS (o n )
1.0
ID=250A, VDS = VGS
S ta tic Dra in -S o u rce On -S ta te
Re s is ta n ce (1)
0.050
0.075
VGS =10V, ID=4.5A
⍀
⍀
VGS =4.5V, ID=3.2A
Fo rw a rd Tra n s co n d u cta n ce (3)
DYNAMIC (3)
g fs
8.7
S
VDS =15V,ID=2.5A
In p u t Ca p a cita n ce
Cis s
Co s s
Crs s
770
92
pF
pF
pF
V
DS =40 V, VGS =0V,
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
f=1MHz
61
td (o n )
tr
td (o ff)
tf
2.55
4.45
28.61
7.35
18.2
2.1
ns
ns
ns
ns
nC
VDD =30V, ID=2.5A
R
G=6.0⍀, VGS =10V
Tu rn -Off De la y Tim e
Fa ll Tim e
(re fe r to te s t circu it)
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
Qg
VDS =30V,VGS =10V,
Qg s
Qg d
nC ID=2.5A
(re fe r to te s t circu it)
4.5
nC
V
VS D
0.8
0.95
TJ =25°C, IS =2.5A,
GS =0V
V
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
trr
19.86
16.36
ns
TJ =25°C, IF=2.5A,
d i/d t= 100A/µs
Qrr
nC
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2002
4
ZXMN4A06G
TYPICAL CHARACTERISTICS
4V
10V
10V
T = 150° C
T = 25° C
4V
3.5V
3V
3.5V
3V
10
1
10
1
2.5V
2.5V
VGS
2V
VGS
2V
1.5V
0.1
0.1
0.1
1
0.1
1
VDS Drain-Source Volta1g0e (V)
VDS Drain-Source Volta1g0e (V)
Output Characteristics
Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS
ID
=
10V
10
=
4.5A
RDS(on)
T = 150° C
T = 25° C
VGS(th)
1
VGS
ID
=
VDS
VDS
3
= 10V
=
250uA
1
2
4
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj J unction Temperature (° C)
Typical Transfer Characteristics
Normalised Curves v Temperature
1.5V
2V
T = 25° C
T = 150° C
10
10
1
VGS
2.5V
3V
T = 25° C
3.5V
1
4V
0.1
10V
0.1
0.2
0.4
0.8
1.0
1.2
ID Dra1in Current (1A0)
V
Sou0r.c6e-Drain Voltage (V)1.4
SD
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - MAY 2002
5
ZXMN4A06G
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2002
6
ZXMN4A06G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
4.6
2.0 m in
(3x)
2.3
1.5 m in
(3x)
6.8
2.0 m in
3.8 m in
PACKAGE DIMENSIONS
MILLIMETRES
MILLIMETRES
DIM
DIM
MIN
ᎏ
MAX
1.80
0.10
1.65
0.84
3.10
0.33
MIN
6.30
MAX
6.70
A
D
e
A1
A2
b
0.02
1.55
0.66
2.90
0.23
2.30 BASIC
4.60 BASIC
6.70 7.30
e1
E
b 2
C
E1
L
3.30
0.90
3.70
ᎏ
© Zetex plc 2002
Zetex plc
Zetex Gm bH
Zetex Inc
Zetex (Asia) Ltd
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Germ any
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ISSUE 1 - MAY 2002
7
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