ZXMN4A06GQ_15 [DIODES]
40V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | ZXMN4A06GQ_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN4A06GQ
Green
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
TA = +25°C
7A
•
•
•
•
•
•
•
•
Low On-Resistance
V(BR)DSS
RDS(ON)
0.05Ω @ VGS = 10V
Fast Switching Speed
40V
Low Threshold
Low Gate Drive
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
•
•
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
•
•
•
DC-DC Converters
Audio Output Stages
Relay and Solenoid driving
Motor Control
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
•
SOT223
D
G
S
Equivalent Circuit
Pin Out - Top View
Top View
Ordering Information (Note 4 & 5)
Part Number
ZXMN4A06GQTA
ZXMN4A06GQTC
Compliance
Automotive
Automotive
Case
SOT223
SOT223
Packaging
1,000/Tape & Reel
4,000/Tape & Reel
Note:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
N4A06 = Marking Code
YWW = Date Code Marking
Y = Year (ex: 3 = 2013)
WW = Week (01 - 53)
YWW
N4A06
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January 2014
© Diodes Incorporated
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
ZXMN4A06GQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
Value
40
Unit
V
V
VGS
±20
7
(Note 7)
Continuous Drain Current
5.6
5
22
5.4
22
A
V
V
GS = 10V
GS= 10V
TA = +70°C (Note 7)
(Note 6)
(Note 8)
ID
Pulsed Drain Current
A
A
A
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 7)
(Note 8)
ISM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
2
16
3.9
31
Unit
(Note 6)
(Note 7)
Power Dissipation
Linear Derating Factor
W
mW/°C
PD
(Note 6)
(Note 7)
62.5
32.2
-55 to +150
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
40
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
ID = 250µA, VGS = 0V
µA
nA
VDS = 40V, VGS = 0V
IGSS
±100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1
V
VGS(th)
⎯
⎯
⎯
0.05
0.075
⎯
ID = 250μA, VDS = VGS
V
V
GS = 10V, ID = 4.5A
GS = 4.5V, ID = 3.2A
Static Drain-Source On-Resistance (Note 9)
ꢀ
RDS(ON)
⎯
Forward Transconductance (Notes 11)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 11)
Reverse recovery charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
8.7
0.8
S
V
gfs
VSD
trr
⎯
⎯
VDS = 15V, ID = 2.5A
0.95
⎯
IS = 2.5A, VGS = 0V, TJ = +25°C
14.5
7.8
ns
nC
IF = 2.5A, di/dt = 100A/µs,
TJ = +25°C
Qrr
⎯
⎯
746
93
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 40V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
60
19
VDS = 30V, VGS = 10V,
2.3
4.1
3.4
2.8
20
Qgs
Qgd
tD(on)
tr
ID = 2.5A (refer to test circuit)
VDD = 30V, VGS = 10V
ID = 2.5A, RG ≅ 6ꢀ
(refer to test circuit)
tD(off)
tf
7.7
Notes:
6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For a device surface mounted on FR-4 PCB measured at t≦5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature.
9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.
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© Diodes Incorporated
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
ZXMN4A06GQ
20
18
16
14
12
10
8
20.0
18.0
16.0
14.0
12.0
10.0
8.0
V
= 5.0V
DS
V
= 10V
GS
V
= 4.0V
GS
V
= 3.5V
GS
V
= 3.0V
T
= 150°C
GS
A
T
= 125°C
A
6.0
6
T
= 85°C
A
4.0
4
V
= 2.5V
T
= 25°C
GS
A
2.0
2
T
= -55°C
A
V
= 2.0V
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1.0
1
0.8
V
= 3.0V
V
= 2.5V
GS
GS
0.6
0.4
V
= 3.5V
GS
I
= 4.5A
D
0.1
V
= 4.0V
GS
V
V
= 4.5V
= 10V
GS
GS
0.2
0
I
= 3.2A
D
0.01
1
0
2
4
6
8
10 12 14 16 18 20
10
100
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristic
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2.5
2
V
= 4.5V
GS
V
I
= 10V
T
= 150°C
= 125°C
GS
A
= 4.5A
D
T
A
1.5
1
T
= 85°C
A
T
T
= 25°C
A
V
= 4.5V
GS
I
= 5.0A
D
= -55°C
A
0.5
0
-50 -25
0
25
50
75 100 125 150
C)
Figure 6 On-Resistance Variation with Temperature
0
2
4
6
8
10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (
°
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
ZXMN4A06GQ
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
I
= 1mA
D
I
= 250µA
D
V
= 4.5V
GS
I
= 5.0A
D
0.8
0.6
0.4
V
= 10V
GS
I
= 4.5A
D
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
0
25
50
75 100 125 150
C)
Figure 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
°
TJ, JUNCTION TEMPERATURE (
°
20
18
16
14
12
10
8
10000
1000
100
C
iss
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
C
oss
T
= 25°C
A
6
4
2
0
C
rss
T
= -55°C
A
f = 1MHz
10
0
0.3
0.6
0.9
1.2
1.5
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
100
10
R
DS(on)
V
I
= 30V
DS
Limited
= 2.5A
D
6
1
DC
P
= 10s
W
4
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
0.01
TJ(max) = 150°C
TA = 25°C
VGS = 4.5V
P
= 1ms
W
2
P
= 100µs
W
Single Pulse
DUT on 1 * MRP Board
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
ZXMN4A06GQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * Rθ
RθJA = 95°C/W
JA
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
E
E1
Gauge
Plane
0.25
—
—
—
—
4.60
2.30
Seating
Plane
L
0.85 1.05 0.95
0.84 0.94 0.89
e1
b
Q
e
All Dimensions in mm
A
A1
7
°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X1
Y1
Dimensions Value (in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
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© Diodes Incorporated
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
ZXMN4A06GQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36694 Rev. 2 - 2
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