ZXT3M322 [ZETEX]
MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION SWITCHING TRANSISTOR; MPPS微型封装的电源解决方案40V PNP低饱和开关晶体管型号: | ZXT3M322 |
厂家: | ZETEX SEMICONDUCTORS |
描述: | MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION SWITCHING TRANSISTOR |
文件: | 总6页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXT3M322
MPPS™ Miniature Package Power Solutions
40V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
CEO
V
= -40V; R
= 104m ; I = -3A
SAT C
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
2mm x 2mm MLP
(single die)
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
FEATURES
•
•
•
•
•
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV@ -1A)
h
specified up to -3A
FE
I = -3A Continuous Collector Current
C
2mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters (FET Driving)
Charging Circuits
PINOUT
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXT3M322TA
ZXT3M322TC
7
8mm
8mm
3000
13
10000
2mm x 2mm Single MLP
underside view
DEVICE MARKING
S3
ISSUE 2 - JUNE 2002
1
ZXT3M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
CBO
CEO
EBO
-40
V
-7.5
-4
V
I
I
I
A
CM
Continuous Collector Current (a)
Base Current
-3
A
C
B
-1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
P
P
P
1.5
12
W
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
3
24
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
NOTES
R
R
R
R
θJA
θJA
θJA
θJA
51
125
42
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXT3M322
TYPICAL CHARACTERISTICS
10
1
3.5
3.0
V
CE(SAT)
Tamb=25°C
Limited
2.5
2.0
1.5
1.0
0.5
0.0
2oz Cu
Note: e
DC
1s
100ms
0.1
0.01
10ms
1oz Cu
Note: a
1ms
100us
10
Single Pulse, Tamb=25°C
0.1
1
0
25
50
75
100 125 150
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
80
60
40
20
0
D=0.5
D=0.2
1oz copper
Single Pulse
D=0.05
D=0.1
50
25
2oz copper
10
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
100
Pulse Width(s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
=25°C
2oz copper
Tjammabx=150°C
Continuous
1oz copper
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXT3M322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I =-100A
Collector-Base Breakdown
Voltage
V
V
V
-50
-80
V
(BR)CBO
C
Collector-Emitter Breakdown
Voltage
-40
-70
V
V
I =-10mA*
C
(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-7.5
-8.5
I =-100A
E
(BR)EBO
CBO
I
I
I
-25
-25
-25
-40
nA
nA
nA
mV
V
V
V
=-40V
=-6V
CB
Emitter Cut-Off Current
EBO
EB
Collector Emitter Cut-Off Current
=-32V
CES
CES
Collector-Emitter Saturation
Voltage
V
-25
I =-0.1A, I =-10mA*
C B
CE(sat)
-150
-195
-210
-260
-220 mV
-300 mV
-300 mV
-370 mV
I =-1A, I =-50mA*
C B
I =-1.5A, I =-100mA*
C
B
I =-2A, I =-200mA*
C
B
I =-2.5A, I =-250mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
-0.97
-0.89
-1.05
-0.95
V
V
I =-2.5A, I =-250mA*
C B
BE(sat)
BE(on)
FE
I =-2.5A, V =-2V*
C
CE
Static Forward Current Transfer
Ratio
300
300
180
60
480
450
290
130
22
I =-10mA, V =-2V*
C CE
I =-0.1A, V =-2V*
C
C
CE
CE
CE
I =-1A, V =-2V*
I =-1.5A, V =-2V*
C
12
I =-3A, V =-2V*
C CE
Transition Frequency
f
150
190
MHz
I =-50mA, V =-10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
19
40
25
pF
ns
ns
V
V
=-10V, f=1MHz
obo
(on)
(off)
CB
t
t
=-15V, I =-0.75A
C
=I =-15mA
CC
I
B1 B2
Turn-Off Time
435
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZXT3M322
TYPICAL CHARACTERISTICS
1
100m
10m
0.25
IC/IB=50
0.20
Tamb=25°C
0.15
0.10
0.05
0.00
100°C
25°C
IC/IB=100
IC/IB=50
-55°C
IC/IB=10
10m
1m
100m
1
1m
10m
100m
IC Collector Current (A)
IC Collector Current (A)1
VCE(SAT) vIC
VCE(SAT) vIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
V =2V
IC/IB=50
CE
1.0
100°C
0.8
0.6
0.4
25°C
-55°C
25°C
-55°C
100°C
0
IC Collector Current (1A)
IC Collector Current (A)1
1m
10m
100m
1m
10m
100m
h vIC
VBE(SAT) vIC
FE
V =2V
1.0
0.8
0.6
0.4
0.2
CE
-55°C
25°C
100°C
1m
10m
100m
1
IC Collector Current (A)
VBE(ON) vIC
ISSUE 2 - JUNE 2002
5
ZXT3M322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.18
0.17
MAX.
1.00
0.05
0.75
0.25
0.28
0.30
MIN.
MAX.
0.0393
0.002
A
0.0315
0.00
e
E
0.0255 REF
0.0787 BSC
A1
A2
A3
b
0.0255
0.0059
0.0070
0.0066
0.0295
0.0098
0.0110
0.0118
E2
E4
L
0.79
0.99
0.68
0.45
0.031
0.039
0.0267
0.0177
0.48
0.20
0.0188
0.0078
b1
D
L2
r
0.125 MAX.
0.075 BSC
0Њ 12Њ
0.005 REF
0.0029 BSC
0Њ 12Њ
2.00 BSC
0.0787 BSC
D2
D4
1.22
0.56
1.42
0.76
0.0480
0.0220
0.0559
0.0299
⍜
© Zetex plc 2002
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For the latest product information, log on to www.zetex.com
ISSUE 2 - JUNE 2002
6
相关型号:
ZXT4M322TC
Small Signal Bipolar Transistor, 2.5A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, 0.90 MM HEIGHT, MLP322, 5 PIN
DIODES
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