ZXTD3M832TA [ZETEX]
MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR; MPPSTM微型封装的电源解决方案双路40V PNP低饱和晶体管
| 型号： | ZXTD3M832TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTD3M832
TM
MPPS Miniature Package Pow er Solutions
DUAL 40V PNP LOW SATURATION TRANSISTOR
SUMMARY
PNP
V
= -40V; R
= 104m ; I = -3A
SAT C
CEO
DESCRIPTION
Packaged in the new innovative 3m m x 2m m MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual PNP transistors offer
extrem ely low on state losses m aking them ideal for use in DC-DC circuits and
various driving and power m anagem ent functions.
Additionally users gain several other key benefits:
Perform ance capability equivalent to m uch larger packages
Im proved circuit efficiency & pow er levels
PCB area and device placem ent savings
Low er Package Height (0.9m m nom )
MLP832
Reduced com ponent count
FEATURES
• Low Equivalent On Resistance
• Extrem ely Low Saturation Voltage (-220m V m ax @1A)
• hFE specified up to -3A
• IC = -3A Continuous Collector Current
• 3m m x 2m m MLP
APPLICATIONS
• DC - DC Converters
• Charging circuits
• Power switches
• Motor control
• CCFL Backlighting
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD3M832TA
ZXTD3M832TC
7”
8m m
8m m
3000
13”
10000
Underside view
DEVICE MARKING
• D33
ISSUE 1 - J UNE 2003
1
S E M IC O N D U C T O R S
ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-50
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
V
V
V
CBO
CEO
EBO
-40
V
-7.5
-4
V
Pe a k Pu ls e Cu rre n t
I
I
I
A
CM
(a ) (f)
Co n tin u o u s Co lle cto r Cu rre n t
-3
A
C
B
Ba s e Cu rre n t
-1000
m A
(a )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
P
P
P
P
P
P
1.5
12
W
m W/ЊC
D
D
D
D
D
D
(b )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
2.45
19.6
W
m W/ЊC
(c)(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1
8
W
m W/ЊC
(d )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1.13
9
W
m W/ЊC
(d )(g )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1.7
13.6
W
m W/ЊC
(e )(g )
Po w e r Dis s ip a tio n a t TA=25°C
3
W
Lin e a r De ra tin g Fa cto r
24
m W/ЊC
Op e ra tin g & S to ra g e Te m p e ra tu re Ra n g e
J u n ctio n Te m p e ra tu re
T :T
-55 to +150
150
ЊC
ЊC
j
s tg
T
j
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83.3
51
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
(a )(f)
J u n ctio n to Am b ie n t
R
R
R
R
R
R
⍜J A
⍜J A
⍜J A
⍜J A
⍜J A
⍜J A
(b )(f)
J u n ctio n to Am b ie n t
(b )(f)
J u n ctio n to Am b ie n t
125
(d )(f)
J u n ctio n to Am b ie n t
111
(d )(g )
J u n ctio n to Am b ie n t
73.5
41.7
(e )(g )
J u n ctio n to Am b ie n t
NOTES
(a) For a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at tϽ5 secs for a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface m ounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.
(d) For a dual device surface m ounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface m ounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.
(i) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base of the device as shown in the
package dim ensions data. The therm al resistance for a dual device m ounted on 1.5m m thick FR4 board using m inim um copper of 1 oz weight,
1m m wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500m W
ISSUE 1 - J UNE 2003
2
S E M IC O N D U C T O R S
ZXTD3M832
TYPICAL CHARACTERISTICS
ISSUE 1 - J UNE 2003
3
S E M IC O N D U C T O R S
ZXTD3M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
-50
TYP. MAX. UNIT CONDITIONS
Co lle cto r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r-Em itte r Bre a kd o w n Vo lta g e
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
V
V
V
-80
-70
V
V
I =-100A
C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
-40
I =-10m A*
C
-7.5
-8.5
V
I =-100A
E
I
I
I
-25
-25
-25
nA
nA
nA
V
V
V
=-40V
=-6V
CB
Em itte r Cu t-Off Cu rre n t
EBO
EB
Co lle cto r Em itte r Cu t-Off Cu rre n t
Co lle cto r-Em itte r S a tu ra tio n Vo lta g e
=-32V
CES
CES
V
-25
-40
m V I =-0.1A, I =-10m A*
C B
CE(s a t)
-150
-195
-210
-260
-220
-300
-300
-370
m V I =-1A, I =-50m A*
C B
I =-1.5A, I =-100m A*
m V
m V
m V
C
B
I =-2A, I =-200m A*
C
B
I =-2.5A, I =-250m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
-0.97 -1.05
-0.89 -0.95
V
V
I =-2.5A, I =-250m A*
C B
BE(s a t)
BE(o n )
FE
I =-2.5A, V =-2V*
C
CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r Ra tio
h
300
300
180
60
480
450
290
130
22
I =-10m A, V =-2V*
C CE
I =-0.1A, V =-2V*
C
CE
I =-1A, V =-2V*
C
CE
I =-1.5A, V =2V*
C
CE
I =-3A, V =-2V*
12
C
CE
Tra n s itio n Fre q u e n cy
f
150
190
MHz I =-50m A, V =-10V
T
C
CE
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
t
19
40
25
pF
ns
ns
V
=-10A, f=1MHz
o b o
CB
V
=-15V, I =-0.75A
C
=I =-15m A
(o n )
(o ff)
CC
I
B1 B2
Tu rn -Off Tim e
t
435
*Measured under pulsed conditions. Pulse width=300s. Duty cycle Յ 2%
ISSUE 1 - J UNE 2003
4
S E M IC O N D U C T O R S
ZXTD3M832
TYPICAL CHARACTERISTICS
ISSUE 1 - J UNE 2003
5
S E M IC O N D U C T O R S
ZXTD3M832
PACKAGE OUTLINE
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim etres
Inches
Min
Millim etres
Min Max
0.65 REF
2.00 BSC
Inches
Min Max
DIM
DIM
Min
0.80
0.00
0.65
0.15
0.24
0.17
Max
Max
0.039
0.002
A
A1
A2
A3
b
1.00
0.05
0.75
0.25
0.34
0.30
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
0.0255 0.0295
E2
E4
L
0.43
0.63
0.36
0.017
0.006
0.0249
0.014
0.006
0.009
0.0098
0.013
0.16
0.20
ᎏ
0.45
0.0078 0.0157
b1
D
0.0066 0.0118
0.118 BSC
L2
r
0.125
0.00
0.005
3.00 BSC
0.075 BSC
0.0029
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397 0.0476
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ISSUE 1 - J UNE 2003
6
S E M IC O N D U C T O R S
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