ZXTP25020CFHTA [ZETEX]
20V, SOT23, PNP medium power transistor; 20V ， SOT23 ， PNP中等功率晶体管
| 型号： | ZXTP25020CFHTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V, SOT23, PNP medium power transistor |
| 文件： | 总6页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP25020CFH
20V, SOT23, PNP medium power transistor
Summary
BV
BV
> -20V
CEO
ECO
> -7V
I
= -4A
C(cont)
R
= 34m⍀
< -55mV @ 1A
CE(sat)
V
CE(sat)
P = 1.25W
D
Complementary part number ZXTN25020CFH
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
7V reverse blocking voltage
Applications
E
B
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
C
High side driver
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25020CFHTA
7
8
3,000
Device marking
1B2
Issue 1 - May 2006
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1
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ZXTP25020CFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-25
V
CBO
CEO
ECO
EBO
Collector-emitter voltage
-20
-7
V
V
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
-7
V
(b)
I
-4
A
A
A
W
Continuous collector current
C
Peak pulse current
Base current
(a)
I
-10
-1
CM
I
B
P
P
P
P
0.73
D
D
D
D
Power dissipation at T =25°C
A
Linear derating factor
5.84
1.05
mW/°C
W
(b)
(d)
(d)
Power dissipation at T =25°C
A
Linear derating factor
8.4
mW/°C
W
1.25
Power dissipation at T =25°C
A
Linear derating factor
9.6
mW/°C
W
1.81
Power dissipation at T =25°C
A
Linear derating factor
14.5
mW/°C
°C
Operating and storage temperature range
T , T
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
R
171
°C/W
⍜JA
⍜JA
⍜JA
⍜JA
Junction to ambient
(b)
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
(c)
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
2
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ZXTP25020CFH
Characteristics
Issue 1 - May 2006
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ZXTP25020CFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min.
Typ.
Max. Unit Conditions
Collector-base breakdown
voltage
BV
BV
BV
-25
-20
-7
-50
V
V
V
V
I = -100A
C
CBO
CEO
EBO
ECX
(*)
Collector-emitter breakdown
voltage (base open)
-35
-8.2
-8.0
I = -10mA
C
Emitter-base breakdown
voltage
I = -100A
E
(*)
Emitter-collectorbreakdown BV
voltage (reverse blocking)
-7
I = -100A
R
< 10k⍀
BC
E
or 0.25 < V
< -0.25V
BC
(*)
Emitter-collectorbreakdown BV
voltage (base open)
-7
-8.8
<-1
V
ECO
I = -100A
E
Collector-base cut-off
current
I
-50
-20
nA
A
V
V
= -20V
= -20V, T
CBO
CB
CB
= 100°C
amb
Emitter-base cut-off current
I
<-1
-43
-50
-55
nA
V
= -5.6V
EBO
EB
(*)
Collector-emitter saturation
voltage
V
mV
CE(sat)
I = -1A, I = -100mA
C
B
(*)
-70
-100
-170
-210
mV
mV
mV
I = -1A, I = -20mA
C
B
(*)
-120
-150
-930
I = -2A, I = -40mA
C
B
(*)
(*)
I = -4A, I = -200mA
C
B
Base-emitter saturation
voltage
V
V
-1050 mV
BE(sat)
I = -4A, I = -200mA
C
B
(*)
Base-emitter turn-on voltage
-810
350
250
140
40
-900
500
mV
BE(on)
FE
I = -4A, V = -2V
C
CE
(*)
Static forward current
transfer ratio
h
200
150
85
I = -10mA, V = -2V
C
CE
(*)
I = -1A, V = -2V
C
CE
(*)
I = -4A, V = -2V
C
CE
(*)
I = -10A, V = -2V
C
CE
Transition frequency
Output capacitance
f
285
MHz I = -50mA, V = -10V
T
C
CE
f = 100MHz
(*)
C
32.4
40
pF
OBO
V
V
= -10V, f = 1MHz
= -15V.
CB
CC
Delay time
Rise time
t
t
t
t
38.4
49.2
168
55
ns
ns
ns
ns
d
I = -750mA,
C
r
s
f
I
= I = -15mA
B2
B1
Storage time
Fall time
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25020CFH
Typical characteristics
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
5
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ZXTP25020CFH
Package outline - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
-
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
-
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
-
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
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