TM
2N2322 2N2326
2N2323 2N2327
2N2324 2N2328
2N2325 2N2329
Central
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
1.6 AMPS, 25 THRU 400 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2322
Series types are hermetically sealed Silicon
Controlled Rectifiers designed for sensing
circuit applications and control systems.
MARKING: FULL PART NUMBER
2N23__
TO-39 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL 22
23
24
25
26
27
28
29 UNITS
Peak Repetitive Forward Voltage
Peak Repetitive Reverse Voltage
Non-Repetitive Peak Reverse Voltage
RMS On-State Current
V
V
V
25
25
40
50 100 150 200 250 300 400
V
DRM
RRM
RSM
50 100 150 200 250 300 400
V
75 150 225 300 350 400 500
V
I
1.6
1.0
A
T(RMS)
Average On-State Current (T =85°C)
C
I
A
T(AV)
Peak One Cycle Surge (t=8.3ms)
I
15
A
TSM
Peak Gate Power
P
0.10
W
W
A
GM
Average Gate Power
Peak Gate Current
P
0.01
G(AV)
I
0.10
GM
Peak Gate Voltage
V
6.0
V
GM
Junction Temperature
Storage Temperature
T
-65 to +125
-65 to +150
°C
°C
J
T
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
Rated V , V
MIN
MAX
5.0
UNITS
μA
I
I
I
, I
, R =1.0kΩ
DRM RRM
DRM RRM GK
V =6.0V, R =100Ω
200
2.0
0.8
1.5
μA
mA
V
GT
H
D
L
V =6.0V, R =1.0kΩ
GK
D
V
V =6.0V, R =100Ω
GT
TM
D
L
V
I
=1.0A, tp=380μs
V
TM
R0 (11-December 2008)