MTB3K0B06KS6R
更新时间：2025-04-28 11:17:32
品牌：CYSTEKEC
描述：Parts Number : MTB3K0B06KS6R; Package : SOT-363; Channel : Dual P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;
概述
数据手册MTB3K0B06KS6R 概述
Parts Number : MTB3K0B06KS6R; Package : SOT-363; Channel : Dual P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;
MTB3K0B06KS6R 数据手册
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PDF下载MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Product Summary
Features
BVDSS
-60
3
3.3
-0.24
V
Ω
A
• Low Gate Charge
RDS(ON) typ. @ VGS=-10V, ID=-0.2A
RDS(ON) typ. @ VGS=-4.5V, ID=-0.1A
ID @ VGS=-10V, TA=25°C
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free
• ESD protected gate, typical 3kV (HBM)
SOT-363
Marking
Device Code
BTB
Date Code
YM: Date Code Marking
Y: Year Code, the last digit of Christian year
M: Month Code
1: Jan 2: Feb 3: Mar 4: Apr 5: May 6: Jun
7: Jul 8: Aug 9: Sep A: Oct B: Nov C: Dec
Ordering Information
Device
Package
Shipping
MTB3K0B06KS6R-0-T1-G
SOT-363
3000pcs / Tape & Reel
0: Product rank, zero for no rank products.
T1: Packing spec, T1 : 3000pcs / tape & reel, 7” reel
G: Environment friendly grade: S for RoHS compliant products, G for RoHS
compliant and green compound products.
Absolute Maximum Ratings (TA=25C)
Parameter
Symbol
VDS
Value
-60
±20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=-10V, TA=25C
Continuous Drain Current @ VGS=-10V, TA=70C
Pulsed Drain Current
Continuous Body Diode Forward Current @ TA=25C
Pulsed Body Diode Forward Current @ TA=25C
*a
*a
*b
*a
*a
*a
*a
-0.24
-0.19
-0.96
-0.24
-0.96
0.5
ID
IDM
IS
ISM
A
TA=25C
Total Power Dissipation
TA=70C
PD
W
0.3
Operating Junction and Storage Temperature Range
Steady State Thermal Resistance, Junction-to-Ambient
TJ, Tstg
RθJA
-55~+150
266
C
C/W
*a
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1/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
IGSS
IDSS
-60
-1
-
-
-
-
-
-
-
-2.5
-
±10
-1
4.4
5
VGS=0V, ID=-250μA
V
S
-
0.34
-
-
3
VDS=VGS, ID=-250μA
VDS=-10V, ID=-0.1A
VGS=±16V, VDS=0V
VDS=-48V, VGS=0V
VGS=-10V, ID=-0.2A
VGS=-4.5V, ID=-0.1A
μA
RDS(ON)
Ω
3.3
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
35
9
7
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Qg
Qg
Qgs
pF
nC
VDS=-30V, VGS=0V, f=1MHz
VDS=-30V, ID=-0.2A, VGS=-4.5V
VDS=-30V, ID=-0.2A, VGS=-10V
*c,d
*c,d
*c,d
*c,d
0.7
1.5
0.4
0.1
6.3
15
27
21
Qgd
td(ON) *c,d
*c,d
td(OFF) *c,d
*c,d
tr
ns
VDS=-30V, ID=-0.2A, VGS=-10V, RGS=6Ω
tf
Source-Drain Diode
VSD
trr
*d
-
-
-
-0.86
11
4
-1.2
-
-
V
ns
nC
IS=-0.2A, VGS=0V
IF=-0.2A, di/dt=100A/μs
Qrr
Note:
*a. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz copper, in a still air environment with TA=25°C. The
power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user’s specific board design.
*b. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to
keep initial TJ=25°C.
*c. Pulse Test : Pulse Width300μs, Duty Cycle2%.
*d. Independent of operating temperature.
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2/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Typical Characteristics
Breakdown Voltage vs Junction Temperature
1.2
Typical Output Characteristics
0.8
0.6
0.4
0.2
0
-4V
-10V,-9V,-8V,-7V,
-6V,-5V,-4.5V
1.1
1
VGS=-3.5V
0.9
ID=-250μA
VGS=0V
0.8
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Body Diode Current vs Source-Drain Voltage
5
1.2
1
4.5
4
TJ=25°C
0.8
0.6
0.4
0.2
VGS=-4.5V
VGS=-10V
TJ=150°C
3.5
3
2.5
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
-ID, Drain Current(A)
-IS, Body Diode Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Temperature
8
7
6
5
4
3
2
2.5
2
VGS=-10V, ID=-0.2A
RDS(ON)@TJ=25°C: 3Ω typ.
1.5
1
ID=-0.2A
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
TJ, Junction Temperature(°C)
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3/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Typical Characteristics
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Temperature
1.4
100
Ciss
1.2
ID=-1mA
1
Coss
Crss
10
0.8
ID=-250μA
0.6
0.4
1
1
-75 -50 -25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
-VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
8
6
0.1
4
VDS=-30V
ID=-0.2A
VDS=-10V
TA=25°C
Pulsed
2
0
0.01
0
0.5
1
1.5
2
0.001
0.01
0.1
1
-ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs Junction Temperature
10
1
0.25
0.2
0.15
0.1
100μs
RDSON
1ms
Limited
0.1
10ms
100ms
1s
DC
0.01
TA=25°C, TJ=150°C
0.05
0
VGS=-10V, RθJA=266°C/W
VGS=-10V, RθJA=266°C/W
Single Pulse
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
175
-VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
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4/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Typical Characteristics
Single Pulse Power Rating, Junction to Ambient
60
40
20
0
TJ(MAX)=150°C
TA=25°C
RθJA=266°C/W
0.0001
0.001
0.01
0.1
1
10
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=266°C/W
0.1
0.1
0.05
0.02
0.01
0.01, Single
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
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5/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
SOT-363 Dimension
6-Lead SOT-363 Plastic Surface Mount Package
CYS Package Code: S6R
Recommended Soldering Footprint
Inches
Min.
Millimeters
Inches
Min.
Millimeters
DIM
DIM
Max.
0.043
0.004
0.039
0.014
0.006
0.087
0.053
Min.
Max.
1.100
0.100
1.000
0.350
0.150
2.200
1.350
Max.
0.096
TYP.
0.055
REF.
0.018
8°
Min.
Max.
2.450
TYP.
1.400
REF.
0.460
8°
A
A1
A2
b
c
D
0.035
0.000
0.035
0.006
0.003
0.079
0.045
0.900
0.000
0.900
0.150
0.080
2.000
1.150
E1
e
e1
L
L1
θ
0.085
0.026
0.047
0.021
0.010
0°
2.150
0.650
1.200
0.525
0.260
0°
E
Note:
•
•
•
Controlling dimension: millimeters.
Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
•
Lead: pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
•
•
•
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
www.cystekec.com
6/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
Direction of unreeling
BTB
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7/8
Ver. A1
2024.02.15
MTB3K0B06KS6R
Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
3C/second max.
3C/second max.
(TS max to TP)
Preheat
−Temperature Min (TS min)
−Temperature Max (TS max)
−Time (tS min to tS max)
100C
150C
150C
200C
60-120 seconds
60-180 seconds
Time maintained above:
−Temperature (TL)
−Time (tL)
183C
217C
60-150 seconds
60-150 seconds
Peak Temperature (TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
10-30 seconds
20-40 seconds
temperature (tP)
Ramp down rate
6C/second max.
6C/second max.
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
Note:
•
All temperatures refer to topside of the package, measured on the package body surface.
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8/8
Ver. A1
2024.02.15
MTB3K0B06KS6R 相关器件
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