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2N3030

更新时间：2025-07-17 11:03:59
品牌：DIGITRON
描述：Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive

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2N3030 概述

Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive 可控硅整流器

2N3030 规格参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.73
Is Samacsys：NJESD-609代码：e0
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

2N3030 数据手册

通过下载2N3030数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Characteristic  
2N3027  
2N3030  
2N3028  
2N3031  
2N3029  
2N3032  
Symbol  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
VDRM  
VRRM  
30V  
30V  
60V  
60V  
100V  
100V  
DC on-state current  
100°C case  
75°C ambient  
IT  
500mA  
250mA  
Repetitive peak on-state current  
ITRM  
30A  
Surge (non-repetitive) on-state current  
50ms  
8ms  
ITSM  
5A  
8A  
Peak gate current  
IGM  
IG(AV)  
VGR  
IGR  
250mA  
25mA  
Average gate current  
Reverse gate voltage  
Reverse gate current  
Storage temperature range  
Operating temperature range  
5V  
3mA  
Tstg  
TJ  
-65°C to +200°C  
-65°C to +150°C  
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.  
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Condition  
25°C tests  
Off state current  
Reverse current  
IDRM  
IRRM  
VGR  
IGT  
-
-
0.002  
0.002  
8
0.100  
0.100  
-
µA  
µA  
V
RGK = 1KΩ, VDRM = rating  
RGK = 1KΩ, VRRM = rating  
IGR = 0.1mA  
Reverse gate voltage  
Gate trigger current  
Gate trigger voltage  
On-state voltage  
5
-5  
8
200  
µA  
V
RGS = 10KΩ, VD = 5V  
RGS = 100Ω, VD = 5V  
IT = 1A (pulse test)  
VGT  
VT  
0.400  
0.800  
0.300  
0.550  
1.200  
0.700  
0.800  
1.500  
5.000  
V
Holding current  
IH  
mA  
RGK = 1KΩ, VD = 5V  
Off-state voltage – critical rate of rise  
30  
15  
10  
60  
30  
25  
-
-
-
RGK = 1KΩ, VD = 30V (2N3027)  
V/µs RGK = 1KΩ, VD = 60V (2N3028)  
RGK = 1KΩ, VD = 100V (2N3029)  
dv/dt  
Gate trigger-on pulse width  
Delay time  
tpg(on)  
td  
-
-
-
-
0.070  
0.080  
0.040  
0.700  
0.200  
µs  
µs  
µs  
µs  
IG = 10mA, IT = 1A, VD = 30V  
IG = 10mA, IT = 1A, VD = 30V  
IG = 10mA, IT = 1A, VD = 30V  
IT = 1A, IR = 1A, RGK = 1KΩ  
-
-
Rise time  
tr  
Circuit commutated turn-off time  
tg  
2.000  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Parameter  
150°C Tests  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Condition  
High temperature off-state current  
High temperature reverse current  
High temperature gate trigger voltage  
High temperature holding current  
-65°C Tests  
IDRM  
IRRM  
VGT  
IH  
-
2
20  
50  
µA  
µA  
V
RGK = 1KΩ, VDRM = rating  
RGK = 1KΩ, VRRM = rating  
RGS = 100Ω, VD = 5V  
-
20  
0.100  
0.050  
0.150  
0.200  
0.600  
1.000  
mA  
RGK = 1KΩ, VD = 5V  
Low temperature gate trigger voltage  
Low temperature gate trigger current  
Low temperature holding current  
VGT  
IGT  
IH  
0.600  
0
0.750  
150  
1.100  
1.200  
10  
V
RGS = 100Ω, VD = 5V  
RGS = 10KΩ, VD = 5V  
RGK = 1KΩ, VD = 5V  
mA  
mA  
0.500  
3.500  
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)  
25°C tests  
Off state current  
Reverse current  
IDRM  
IRRM  
VGR  
IGT  
-
-
0.002  
0.002  
8
0.100  
0.100  
-
µA  
µA  
V
RGK = 1KΩ, VDRM = rating  
RGK = 1KΩ, VRRM = rating  
IGR = 0.1mA  
Reverse gate voltage  
Gate trigger current  
Gate trigger voltage  
On-state voltage  
Holding current  
5
-5  
20  
µA  
V
RGS = 10KΩ, VD = 5V  
RGS = 100Ω, VD = 5V  
IT = 1A (pulse test)  
VGT  
VT  
0.440  
0.800  
0.300  
0.600  
1.500  
4.000  
1.200  
1.000  
V
IH  
mA  
RGK = 1KΩ, VD = 5V  
30  
15  
10  
60  
30  
25  
-
-
-
RGK = 1KΩ, VD = 30V (2N3030)  
V/µs RGK = 1KΩ, VD = 60V (2N3031)  
RGK = 1KΩ, VD = 100V (2N3032)  
Off-state voltage – critical rate of rise  
dv/dt  
Gate trigger-on pulse width  
Delay time  
tpg(on)  
td  
-
-
-
-
0.050  
0.100  
0.050  
0.700  
0.100  
µs  
µs  
µs  
µs  
IG = 10mA, IT = 1A, VD = 30V  
IG = 10mA, IT = 1A, VD = 30V  
IG = 10mA, IT = 1A, VD = 30V  
IT = 1A, IR = 1A, RGK = 1K  
-
-
Rise time  
tr  
Circuit commutated turn-off time  
150°C Tests  
tg  
2.000  
High temperature off-state current  
High temperature reverse current  
High temperature gate trigger voltage  
High temperature holding current  
-65°C Tests  
IDRM  
IRRM  
VGT  
IH  
-
2
20  
50  
µA  
µA  
V
RGK = 1KΩ, VDRM = rating  
RGK = 1KΩ, VRRM = rating  
RGS = 100Ω, VD = 5V  
RGK = 1K, VD = 5V  
-
20  
0.100  
0.050  
0.150  
0.300  
0.400  
2.000  
mA  
Low temperature gate trigger voltage  
Low temperature gate trigger current  
Low temperature holding current  
VGT  
IGT  
IH  
0.440  
0
0.800  
0.400  
5.000  
0.950  
0.500  
8
V
RGS = 100Ω, VD = 5V  
RGS = 10KΩ, VD = 5V  
RGK = 1KΩ, VD = 5V  
mA  
mA  
0.500  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
MECHANICAL CHARACTERISTICS  
Case  
TO-18  
Marking  
Pin out  
Alpha-numeric  
See below  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20190607  
2N3027-2N3032  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20190607  

2N3030 相关器件

型号 制造商 描述 价格 文档
2N3030-HR DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive 获取价格
2N3030E3 MICROSEMI Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18 获取价格
2N3031 MICROSEMI SCRs 0.5 Amp, Planear 获取价格
2N3031 SSDI Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-5, TO-5, 3 PIN 获取价格
2N3031 DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 60; Peak Repetitive 获取价格
2N3031-HR DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 60; Peak Repetitive 获取价格
2N3032 MICROSEMI SCRs 0.5 Amp, Planear 获取价格
2N3032 SSDI Silicon Controlled Rectifier, 1A I(T)RMS, 500mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-5, TO-5, 3 PIN 获取价格
2N3032 DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 100; Peak Repetitive 获取价格
2N3032-HR DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 100; Peak Repetitive 获取价格

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