2N3027-2N3032
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
Parameter
150°C Tests
Symbol
Min.
Typ.
Max.
Unit
Test Condition
High temperature off-state current
High temperature reverse current
High temperature gate trigger voltage
High temperature holding current
-65°C Tests
IDRM
IRRM
VGT
IH
-
2
20
50
µA
µA
V
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
RGS = 100Ω, VD = 5V
-
20
0.100
0.050
0.150
0.200
0.600
1.000
mA
RGK = 1KΩ, VD = 5V
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
VGT
IGT
IH
0.600
0
0.750
150
1.100
1.200
10
V
RGS = 100Ω, VD = 5V
RGS = 10KΩ, VD = 5V
RGK = 1KΩ, VD = 5V
mA
mA
0.500
3.500
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
25°C tests
Off state current
Reverse current
IDRM
IRRM
VGR
IGT
-
-
0.002
0.002
8
0.100
0.100
-
µA
µA
V
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
IGR = 0.1mA
Reverse gate voltage
Gate trigger current
Gate trigger voltage
On-state voltage
Holding current
5
-5
20
µA
V
RGS = 10KΩ, VD = 5V
RGS = 100Ω, VD = 5V
IT = 1A (pulse test)
VGT
VT
0.440
0.800
0.300
0.600
1.500
4.000
1.200
1.000
V
IH
mA
RGK = 1KΩ, VD = 5V
30
15
10
60
30
25
-
-
-
RGK = 1KΩ, VD = 30V (2N3030)
V/µs RGK = 1KΩ, VD = 60V (2N3031)
RGK = 1KΩ, VD = 100V (2N3032)
Off-state voltage – critical rate of rise
dv/dt
Gate trigger-on pulse width
Delay time
tpg(on)
td
-
-
-
-
0.050
0.100
0.050
0.700
0.100
µs
µs
µs
µs
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IT = 1A, IR = 1A, RGK = 1K
-
-
Rise time
tr
Circuit commutated turn-off time
150°C Tests
tg
2.000
High temperature off-state current
High temperature reverse current
High temperature gate trigger voltage
High temperature holding current
-65°C Tests
IDRM
IRRM
VGT
IH
-
2
20
50
µA
µA
V
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
RGS = 100Ω, VD = 5V
RGK = 1K, VD = 5V
-
20
0.100
0.050
0.150
0.300
0.400
2.000
mA
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
VGT
IGT
IH
0.440
0
0.800
0.400
5.000
0.950
0.500
8
V
RGS = 100Ω, VD = 5V
RGS = 10KΩ, VD = 5V
RGK = 1KΩ, VD = 5V
mA
mA
0.500
Rev. 20190607