FMOSAB68N08-H
更新时间：2025-04-28 11:17:32
品牌：FORMOSA
描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 80; ID(A) : 68; PD(W) : 35.7; EAS(mJ) : 5
概述
数据手册FMOSAB68N08-H 概述
Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 80; ID(A) : 68; PD(W) : 35.7; EAS(mJ) : 5
FMOSAB68N08-H 数据手册
通过下载FMOSAB68N08-H数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
List
1
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Electrical characteristics...................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
2
2
2
2
3
4~5
6
6
6
7
8
8
9
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 1
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
68A 80V N-Channel Enhancement
Mode Power MOSFET
Package outline
T3333P8
Features
0.031(0.80)
0.028(0.70)
• RDS(ON) max=7.7mΩ @VGS=10V, IDs=20A
• RDS(ON) max= 13mΩ @VGS=4.5V, IDs=10A
• Advanced trench cell design
10o~14o
• Reliable and rugged
0.006(0.15) Max.
• 100% UIS and Rg tested
• Lead-free parts meet RoHS requirements
• Suffix "-H" indicates Halogen-free part, ex.FMOSAB68N08-H
0.010(0.25)
0.004(0.10)
0.026(0.65)BSC.
0.026(0.65)
0.011(0.28)
0.104(2.65)
Application
• Motor drivers
0.090(2.29)
0.076(1.94)
0.060(1.54)
• DC-DC converter
0.134(3.40)
0.126(3.20)
0.012(0.30)
0.004(0.10)
0.030(0.77)
0.002(0.05)
0.000(0.00)
0.015(0.37)
0.035(0.89)
Mechanical data
0.023(0.59)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, T3333P8
• Mounting Position : Any
0.020(0.50)
0.012(0.30)
0.016(0.40)
0.008(0.20)
• Weight : Approximated 0.02 gram
Dimensions in inches and (millimeters)
Maximum ratings (At TA=25oC unless otherwise specified)
Parameter
Symbol
VDS
Ratings
Unit
V
Drain-source voltage
80
20
Gate-source voltage
VGS
V
Continuous drain current (TC=25°C)
(TC=100°C)
68
ID
A
43
Pulse drain current (Note 1)
IDM
171
25
A
A
Avalanche current single pulse (L=0.1mH) (Note 2)
Avalanche current single pulse (L=0.5mH) (Note 2)
Avalanche energy single pulse (L=0.1mH) (Note 2)
Avalanche energy single pulse (L=0.5mH) (Note 2)
Power dissipation (TC=25°C)
IAS
15
A
31
mJ
mJ
EAS
56
35.7
14.3
+150
-55 to +150
3.5
PD
W
(TC=100°C)
Maximum operating junction temperature
Storage temperature range
TJ
°C
°C
TSTG
RθJC
RθJA
Thermal resistance junction to case (Steady state)
Thermal resistance junction to ambient (Note 3) (Steady state)
°C/W
°C/W
75
Notes 1: Max. current is limited by junction temperature
2: UIS tested and pulse width are limited by maximum junction temperature 150°C
3: Surface mounted on 1in2 FR-4 board with 1oz
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 2
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
Electrical characteristics (At TA=25oC unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate leakage current
BVDSS
IDSS
IDS=250μA, VGS=0V
80
V
VDS=64V, VGS=0V
VGS= 20V, VDS=0V
1.0
ꢀA
nA
IGSS
100
On characteristics
Gate threshold voltage
VGS(th)
RDS(ON)
gfs
VGS=VDS, IDS=250ꢀA
VGS=10V, IDS=20A
VGS=4.5V, IDS=10A
VDS=5V, IDS=10A
1.0
2.0
6.4
10
3.0
7.7
13
V
mꢁ
S
Drain-source on-state resistance (Note 4)
Forward transconductance
27
Dynamic parameters (Note 5)
Input capacitance
Ciss
Coss
Crss
Rg
1692
479
42
pF
pF
pF
ꢁ
Output capacitance
VGS=0V, VDS=40V, f=1.0MHz
VGS=0V, VDS=0V, f=1.0MHz
VGS=4.5V, VDS=40V, ID=20A
VGS=10V, VDS=50V, ID=20A
Reverse transfer capacitance
Gate resistance
1.2
Switching parameters (Note 5)
Total gate charge
Qg
Qg
20
35
Total gate charge
nC
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
Qgd
td(on)
tr
8
9.3
8
Turn-on rise time
15.5
28.3
62
VGS=10V, VDS=40V, ID=1Α, RGEN=6ꢁ
ns
Turn-off delay time
td(off)
tf
Turn-off fall time
Source-drain diode ratings and characteristics
Diode forward voltage (Note 4)
Reverse recovery time
VSD
trr
ISD=10A, VGS=0V
0.8
33
30
1.1
V
ns
nC
IF=10A, VR=40V, dIF/dt=100A/ꢀs
Reverse recovery charge
Qrr
Notes 4: Pulse test : pulse width ≤ 300μs, duty cycle ≤ 2%
5: Guaranteed by design, not subject to production testing
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 3
Formosa MS
Rating and characteristic curves
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 4
Formosa MS
Rating and characteristic curves
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 5
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
Pinning information
Pin
Simplified outline
Symbol
D
D
D
D
Pin1 Source
Pin2 Source
Pin3 Source
Pin4 Gate
8
7
6
5
Pin5 Drain
Pin 1 Indicator
Pin6 Drain
Pin7 Drain
Pin8 Drain
2
3
1
4
S
S
G
S
Top view
Marking
Type number
Marking code
80080
FMOSAB68N08
YWWSSA
Note : YWWSSA=Wafer lot code
1. 1st code : Yearly
2. 2nd/3rd/ code : Weekly
3. 4th/5th code : Sequence
4. 6th code : Assy. code
Suggested solder pad layout
2.80
0.40
0.65
Note:
1.Controlling dimension:in millimeters.
2.General tolerance: 0.05mm.
3.The pad layout is for reference purposes only.
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 6
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
Packing information
P
0
P
1
d
E
F
W
B
A
P
Solid dot = Pin1 indicate
D2
D1
T
C
W1
D
unit:mm
Symbol
T3333P8
Item
Tolerance
Carrier width
A
0.1
0.1
0.1
0.1
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.65
3.65
1.10
1.50
Carrier length
B
Carrier depth
C
d
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
D
D1
330.00
100.00
13.00
1.75
D2
E
F
5.50
P
8.00
P0
P1
T
4.00
2.00
0.25
W
W1
12.00
17.60
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 7
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
Reel packing
COMPONENT
SPACING
INNER
BOX
REEL
DIA,
CARTON
SIZE
REEL
(pcs)
BOX
(pcs)
PACKAGE
T3333P8
REEL SIZE
13"
CARTON
(pcs)
(m/m)
(m/m)
(m/m)
(m/m)
5,000
8.0
10,000
355*335*38
330
350*330*360
80,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55% 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
10~30sec
Time within 5oC of actual Peak
Temperature(tP)
Ramp-down Rate
<3oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
Page
9
A
Page 8
Formosa MS
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB68N08
High reliability test capabilities
Item Test
Conditions
at 260 5OC for 10 sec.
at 245 5OC for 5 sec.
Reference
MIL-STD-750D
METHOD-2031
1. Solder Resistance
MIL-STD-202F
METHOD-208
2. Solderability
MIL-STD-750D
METHOD-1038
V
DS=0.8 X BVDSS, at TJmax=150OC for 168 hrs.
3. High Temperature Reverse Bias
4. Pressure Cooker
15PSIG at TA=121OC 100%RH for 4 hrs.
-55OC to +125OC dwelled for 30 min total 10 cycles.
at TA=85OC, 85%RH for 1000 hrs.
JESD22-A102
MIL-STD-750D
METHOD-1051
5. Temperature Cycling
6. Humidity
MIL-STD-750D
METHOD-1021
at TA=175OC for 1000 hrs.
7. High Temperature Storage Life
MIL-STD-750D
METHOD-1031
http://www.formosams.com
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-2311N28
Issued Date
2022/10/14
Revised Date
-
Revision
A
Page
9
Page 9
Formosa MS
FMOSAB68N08-H 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FMOSAB99N04-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 99; PD(W) : 52; EAS(mJ) : 79; | 获取价格 |
|
| FMOSAC09P8N20-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 200; ID(A) : 9.8; PD(W) : 50; EAS(mJ) : 4 | 获取价格 |
|
| FMOSAC102N10-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 102; PD(W) : 130; EAS(mJ) : | 获取价格 |
|
| FMOSAC103N06-Q1 | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 60; ID(A) : 103; PD(W) : 94; EAS(mJ) : 94 | 获取价格 |
|
| FMOSAC110N10-Q1 | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 110; IDSS@VDSS(V) : 80; IDSS | 获取价格 |
|
| FMOSAC112N06-Q1 | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 60; ID(A) : 112; EAS(mJ) : 94; IDSS@VDSS( | 获取价格 |
|
| FMOSAC115N03-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 30; ID(A) : 115; PD(W) : 50; EAS(mJ) : 14 | 获取价格 |
|
| FMOSAC132N12-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 120; ID(A) : 132; PD(W) : 125; EAS(mJ) : | 获取价格 |
|
| FMOSAC135N10-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 135; PD(W) : 114; EAS(mJ) : | 获取价格 |
|
| FMOSAC136N03-H | FORMOSA | Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 30; ID(A) : 136; PD(W) : 63; EAS(mJ) : 61 | 获取价格 |
|
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